# US 12,119,212 B2 · Wafer support device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,212 B2 - Document ID: US12119212B2 - Status: Granted - Kind: B2 - Application number: 17/999,833 - Filed: 2021-05-27 - Published: 2023-07-13 - Granted: 2024-10-15 - Earliest claimed: 2020-06-29 - Assignees: Sumitomo Osaka Cement Co., Ltd. - Applicants: Sumitomo Osaka Cement Co., Ltd. - Inventors: Masaki Hirayama; Tetsuro Itagaki - Web page: https://patentgrep.com/patent/US12119212B2 ## CPC - H01J 37/32724: {Temperature} - H01J 37/32082: {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)} - H01J 37/32091: {the radio frequency energy being capacitively coupled to the plasma} - H01J 37/32532: {Electrodes} - H01J 37/32568: {Relative arrangement or disposition of electrodes; moving means} - H01J 37/32577: {Electrical connecting means} - H01J 37/32715: {Workpiece holder} - H10P 72/0432: {mainly by conduction} - H10P 72/0434: {mainly by convection} - H10P 72/70: for supporting or gripping - H10P 72/72: using electrostatic chucks - H10P 72/722: {Details of electrostatic chucks} - H01J 37/32541: {Shape} - H01J 2237/2007: Holding mechanisms - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A wafer support device includes a dielectric substrate and an RF electrode provided in the dielectric substrate. The RF electrode is divided into a plurality of zone electrodes arranged in a planar direction of the dielectric substrate. The wafer support device has: a short-circuit member interconnecting the plurality of zone electrodes; and a main power supply rod connected to the short-circuit member from a back side of the dielectric substrate. ## Claims ### Claim 1 A wafer support device comprising: a dielectric substrate; an RF electrode provided in the dielectric substrate, wherein the RF electrode is divided into a plurality of zone electrodes arranged in a planar direction of the dielectric substrate; a short-circuit member which interconnects the plurality of zone electrodes; and a main power supply rod which is connected to the short-circuit member from a back side of the dielectric substrate, wherein the short-circuit member has a plurality of power supply pins which respectively extend from the plurality of zone electrodes to the back side of the dielectric substrate and exposed to a back surface of the dielectric substrate, and a short-circuit electrode which is positioned on the back surface of the dielectric substrate, interconnects the plurality of power supply pins with each other, and connected to the main power supply rod, and wherein the short-circuit electrode is fixed to the plurality of power supply pins in a bent state. ### Claim 2 (depends on 1) The wafer support device according to claim 1, wherein the RF electrode is divided into a plurality of the zone electrodes which are arranged in a radial direction with respect to a center position of the dielectric substrate in plan view. ### Claim 3 (depends on 1) The wafer support device according to claim 1, wherein the RF electrode is divided into a plurality of the zone electrodes which are arranged in a circumferential direction with respect to a center position of the dielectric substrate in plan view. ### Claim 4 (depends on 1) The wafer support device according to claim 1, wherein the RF electrode is divided into a plurality of the zone electrodes which are equal in area. ### Claim 5 (depends on 1) The wafer support device according to claim 1, wherein a heater electrode and an electrostatic adsorption electrode are provided in the dielectric substrate, the heater electrode is positioned closer to the back side of the dielectric substrate than the RF electrode, and the electrostatic adsorption electrode is positioned closer to a wafer placement surface side of the dielectric substrate than the RF electrode. ### Claim 6 (depends on 1) The wafer support device according to claim 1, wherein the RF electrode includes a plurality of zone electrodes which perform plasma generation and electrostatic wafer adsorption. ### Claim 7 (depends on 1) The wafer support device according to claim 1, wherein the short-circuit electrode has a plurality of strip-shaped electrodes which extend radially outward from a center of the dielectric substrate. ### Claim 8 (depends on 1) The wafer support device according to claim 1, wherein the dielectric substrate has a wafer placement surface, and a circular ring-shaped region which surrounds the wafer placement surface and haves an upper surface positioned below the placement surface, and the RF electrode has, in plan view, a first zone electrode positioned in a region overlapping the wafer placement surface in plan view, and a second zone electrode positioned in a region overlapping the circular ring-shaped region in plan view. ### Claim 9 (depends on 8) The wafer support device according to claim 8, wherein the first zone electrode includes a circular electrode which is positioned at a center, and a plurality of strip-shaped electrodes which are arranged in circumferential and radial directions. ### Claim 10 (depends on 8) The wafer support device according to claim 8, wherein the second zone electrode includes a plurality of strip-shaped electrodes which are arranged in a circumferential direction. ### Claim 11 (depends on 8) The wafer support device according to claim 8, wherein the first zone electrode and the second zone electrode are located at different height positions. ### Claim 12 (depends on 1) The wafer support device according to claim 1, wherein the dielectric substrate has a wafer placement surface, a circular ring-shaped region which surrounds the wafer placement surface and has an upper surface at a same height as the placement surface, a step located between the wafer placement surface and the circular ring-shaped region, and the RF electrode has a first zone electrode positioned in a region overlapping the wafer placement surface of the dielectric substrate in plan view, and a third zone electrode positioned in a region overlapping both the wafer placement surface and the circular ring-shaped region in plan view. ### Claim 13 (depends on 12) The wafer support device according to claim 12, wherein the first zone electrode and the second zone electrode are located at a same height position.