# US 12,119,211 B2 · Substrate processing apparatus

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- Number: US 12,119,211 B2
- Document ID: US12119211B2
- Status: Granted
- Kind: B2
- Application number: 18/367,200
- Filed: 2023-09-12
- Published: 2023-12-28
- Granted: 2024-10-15
- Earliest claimed: 2020-05-19
- Assignees: ASM IP Holding B.V.
- Applicants: ASM IP Holding B.V.
- Inventors: ChangMin Lee
- Web page: https://patentgrep.com/patent/US12119211B2

## CPC

- H01J 37/32174: {Circuits specially adapted for controlling the RF discharge}
- H01J 37/32541: {Shape}
- H01J 37/32082: {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)}
- H01J 37/32568: {Relative arrangement or disposition of electrodes; moving means}
- H01J 37/32577: {Electrical connecting means}
- H01J 37/32715: {Workpiece holder}
- H01J 37/32724: {Temperature}
- H01J 37/32935: {Monitoring and controlling tubes by information coming from the object and/or discharge}
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

A substrate processing apparatus capable of locally controlling a plasma intensity and improving thin film properties and thickness uniformity includes: a power supply unit, a processing unit electrically connected to the power supply unit, and a substrate support unit below the processing unit, wherein the substrate support unit includes a first ground electrode and a second ground electrode.

## Claims

### Claim 1

A substrate processing apparatus comprising:
a power supply unit;
a processing unit electrically connected to the power supply unit; and
a substrate support unit below the processing unit;
wherein the substrate support unit comprises a first ground electrode, a second ground electrode, and a third ground electrode, and
wherein the third ground electrode comprises a center electrode arranged in the center of the substrate supporting unit, wherein the first ground electrode comprises a first ring electrode surrounding the center electrode, and wherein the second ground electrode comprises a second ring electrode surrounding the first ring electrode.

### Claim 2 (depends on 1)

The substrate processing apparatus of claim 1, wherein the second ground electrode is apart from the first ground electrode and arranged to surround the first ground electrode.

### Claim 3 (depends on 1)

The substrate processing apparatus of claim 1, wherein the first ground electrode and the second ground electrode are electrically connected to ground, and the substrate processing apparatus comprises at least one of:
a first plasma intensity controller connected between the first ground electrode and the ground; and
a second plasma intensity controller connected between the second ground electrode and the ground.

### Claim 4 (depends on 3)

The substrate processing apparatus of claim 3, wherein at least one of the first plasma intensity controller and the second plasma intensity controller comprises an L-C circuit comprising an inductor, a capacitor, and a variable capacitor.

### Claim 5 (depends on 4)

The substrate processing apparatus of claim 4, wherein at least one of the first plasma intensity controller and the second plasma intensity controller comprises a band pass filter.

### Claim 6 (depends on 1)

The substrate processing apparatus of claim 1, wherein at least one of the first ground electrode and the second ground electrode comprises a plate ground electrode.

### Claim 7 (depends on 1)

The substrate processing apparatus of claim 1, wherein at least one of the first ground electrode and the second ground electrode comprises a mesh ground electrode.

### Claim 8 (depends on 7)

The substrate processing apparatus of claim 7, wherein the mesh ground electrode comprises:
a first ground line extending in a first direction; and
a second ground line extending in a second direction different from the first direction,
wherein the first ground line and the second ground line are electrically connected to each other.

### Claim 9 (depends on 8)

The substrate processing apparatus of claim 8, wherein the first ground line and the second ground line contact each other at a portion where the first ground line and the second ground line intersect each other, and
the first ground line and the second ground line are electrically connected to each other at a contact therebetween.

### Claim 10 (depends on 8)

The substrate processing apparatus of claim 8, wherein the first ground line and the second ground line are apart from each other at a portion where the first ground line and the second ground line intersect each other, and
the first ground line and the second ground line are electrically connected to each other by a conductive member that connects an end of the first ground line to an end of the second ground line.

### Claim 11 (depends on 8)

The substrate processing apparatus of claim 8, wherein, in a plurality of first portions where the first ground line and the second ground line intersect each other, a distance between an upper surface of the substrate support unit and the first ground line is greater than a distance between the upper surface of the substrate support unit and the second ground line, and
in a second portion other than the first portion, a distance between the upper surface of the substrate support unit and the first ground line is equal to a distance between the upper surface of the substrate support unit and the second ground line.

### Claim 12 (depends on 7)

The substrate processing apparatus of claim 7, wherein the first ground electrode comprises a first mesh ground electrode, and
the second ground electrode comprises a second mesh ground electrode,
wherein the first mesh ground electrode and the second mesh ground electrode have different mesh densities.

### Claim 13 (depends on 1)

The substrate processing apparatus of claim 1, wherein the substrate support unit further comprises:
a first heating unit below the first ground electrode; and
a second heating unit below the second ground electrode,
wherein the first heating unit and the second heating unit are independently controlled.

### Claim 14 (depends on 2)

The substrate processing apparatus of claim 2, wherein the first ground electrode and the second ground electrode are separated in the lateral direction by 5 mm or more.

### Claim 15 (depends on 1)

The substrate processing apparatus of claim 1, wherein at least one of the first ground electrode and the second ground electrode comprise a first wire and a second wire, wherein the first wire and the second wire are configured such that the first and second wire intersect an X direction and Y direction, such that the distance from the surface of the substrate supporting to the first wire is the same as the distance from the substrate supporting unit to the second wire.

### Claim 16 (depends on 1)

The substrate processing apparatus of claim 1, wherein the first ground electrode and the second ground electrode are not separated in the lateral direction, but are separated in the vertical direction.

### Claim 17 (depends on 1)

The substrate processing apparatus of claim 1, wherein the first ground electrode and the second ground electrode comprise molybdenum (Mo).

### Claim 18

A substrate processing apparatus comprising:
a power supply unit;
a processing unit electrically connected to the power supply unit; and
a substrate support unit below the processing unit;
wherein the substrate support unit comprises a first ground electrode, and a second ground electrode,
wherein the first ground electrode comprises a first mesh ground electrode, and
the second ground electrode comprises a second mesh ground electrode,
wherein the first mesh ground electrode and the second mesh ground electrode have different mesh densities.

### Claim 19 (depends on 18)

The substrate process apparatus of claim 18, wherein a plasma density or a plasma intensity on a substrate is locally controlled.

### Claim 20

A substrate processing apparatus comprising:
a power supply unit;
a processing unit electrically connected to the power supply unit; and
a substrate support unit below the processing unit,
wherein the substrate support unit comprises a first ground electrode and a second ground electrode,
wherein the substrate support unit further comprises:
a first heating unit below the first ground electrode; and
a second heating unit below the second ground electrode,
wherein the first heating unit and the second heating unit are independently controlled.