# US 12,119,209 B2 · Dynamic processing chamber baffle > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,209 B2 - Document ID: US12119209B2 - Status: Granted - Kind: B2 - Application number: 17/498,189 - Filed: 2021-10-11 - Published: 2023-04-13 - Granted: 2024-10-15 - Earliest claimed: 2021-10-11 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Udit S. Kotagi; Mayur Govind Kulkarni - Web page: https://patentgrep.com/patent/US12119209B2 ## CPC - H01J 37/3244: {Gas supply means} - H01J 37/32697: {Electrostatic control} - H01J 37/32715: {Workpiece holder} - H01J 37/32733: {Means for moving the material to be treated} - H01J 2237/3323: uniformity - H01J 2237/334: Etching - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract Exemplary methods of semiconductor processing may include delivering a deposition precursor into a processing region of a semiconductor processing chamber. The methods may include depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber. The processing region may be maintained at a first pressure during the deposition. The methods may include extending a baffle within the processing region. The baffle may modify a flow path within the processing region. The methods may include forming a plasma of a treatment or etch precursor within the processing region of the semiconductor processing chamber. The processing region may be maintained at a second pressure during the forming. The methods may include treating the layer of material deposited on the substrate with plasma effluents of the treatment precursor. The processes may be cycled any number of times. ## Claims ### Claim 1 A method of semiconductor processing comprising: delivering a deposition precursor into a processing region of a semiconductor processing chamber; depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber, wherein the processing region is maintained at a first pressure during the depositing; extending a baffle within the processing region, wherein the baffle modifies a flow path within the processing region; forming a plasma of a treatment precursor within the processing region of the semiconductor processing chamber, wherein the processing region is maintained at a second pressure during the forming; and treating the layer of material deposited on the substrate with plasma effluents of the treatment precursor. ### Claim 2 (depends on 1) The method of semiconductor processing of claim 1, wherein the semiconductor processing chamber comprises: a faceplate; a substrate support on which the substrate is seated, wherein the processing region is defined between the faceplate and the substrate support; and a pumping ring, wherein the pumping ring extends circumferentially about the processing region. ### Claim 3 (depends on 2) The method of semiconductor processing of claim 2, wherein the baffle extends about the substrate support. ### Claim 4 (depends on 3) The method of semiconductor processing of claim 3, wherein extending the baffle comprises moving the baffle towards the faceplate. ### Claim 5 (depends on 4) The method of semiconductor processing of claim 4, wherein the baffle in an extended position restricts a flow path to the pumping ring. ### Claim 6 (depends on 5) The method of semiconductor processing of claim 5, wherein the baffle reduces a gap distance between an interior edge of the pumping ring and an exterior edge of the faceplate by greater than or about 10%. ### Claim 7 (depends on 1) The method of semiconductor processing of claim 1, wherein depositing the layer of material is performed at a pressure within the processing region of greater than or about 100 Torr, and wherein forming the plasma of the treatment precursor is performed at a pressure within the processing region of less than or about 20 Torr. ### Claim 8 (depends on 1) The method of semiconductor processing of claim 1, wherein the substrate is maintained at a temperature of greater than or about 400° C. during the depositing and during the treating. ### Claim 9 (depends on 1) The method of semiconductor processing of claim 1, wherein the baffle comprises an end effector defining an interior shape configured to control flow to an exhaust system. ### Claim 10 (depends on 1) The method of semiconductor processing of claim 1, further comprising: subsequent to depositing the layer of material on the substrate, moving the substrate towards a faceplate of the semiconductor processing chamber. ### Claim 11 A semiconductor processing system comprising: a chamber body comprising sidewalls and a base, the chamber body defining a processing region; a substrate support extending through the base of the chamber body, wherein the substrate support is configured to support a substrate within the processing region; a faceplate defining a plurality of apertures through the faceplate, wherein the faceplate defines the processing region from above; a pumping ring extending about the processing region and providing an exhaust path from the processing region; and a baffle extending about the substrate support, the baffle translatable between a first position in which the baffle is retracted about the substrate support and a second position in which the baffle is extended into the processing region. ### Claim 12 (depends on 11) The semiconductor processing system of claim 11, wherein the baffle in the second position reduces a gap distance between an interior edge of the pumping ring and an exterior edge of the faceplate by greater than or about 10%. ### Claim 13 (depends on 11) The semiconductor processing system of claim 11, wherein the baffle in the second position intersects a flow path between the faceplate and the pumping ring. ### Claim 14 (depends on 11) The semiconductor processing system of claim 11, wherein the baffle comprises: a dish defining a central recess; an aperture extending through the dish and configured to receive a stem of the substrate support; and one or more posts coupling the dish with an actuator. ### Claim 15 (depends on 11) The semiconductor processing system of claim 11, wherein the baffle comprises an end effector defining an interior shape configured to control flow to an exhaust system. ### Claim 16 (depends on 11) The semiconductor processing system of claim 11, wherein the baffle comprises a ceramic material. ### Claim 17 A method of semiconductor processing comprising: delivering a deposition precursor into a processing region of a semiconductor processing chamber; depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber, wherein the processing region is maintained at a first pressure greater than or about 100 Torr during the depositing; extending a baffle within the processing region, wherein the baffle modifies a flow path within the processing region; forming a plasma of a treatment precursor within the processing region of the semiconductor processing chamber, wherein the processing region is maintained at a second pressure less than or about 20 Torr during the forming; and treating the layer of material deposited on the substrate with plasma effluents of the treatment precursor. ### Claim 18 (depends on 17) The method of semiconductor processing of claim 17, wherein the baffle reduces a gap distance between an interior edge of a pumping ring defining an exhaust path and an exterior edge of a faceplate defining the processing region from above by greater than or about 10%. ### Claim 19 (depends on 17) The method of semiconductor processing of claim 17, wherein the semiconductor processing chamber comprises: a faceplate; a substrate support on which the substrate is seated, wherein the processing region is defined between the faceplate and the substrate support; and a pumping ring, wherein the pumping ring extends circumferentially about the processing region, and wherein the baffle extends about the substrate support. ### Claim 20 (depends on 17) The method of semiconductor processing of claim 17, wherein the baffle comprises: a dish defining a central recess; an aperture extending through the dish and configured to receive a stem of the substrate support; one or more posts coupling the dish with an actuator; and an end effector coupled with the dish and defining an interior shape of the baffle configured to control flow to an exhaust system.