# US 12,119,207 B2 · Apparatus for plasma processing

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- Number: US 12,119,207 B2
- Document ID: US12119207B2
- Status: Granted
- Kind: B2
- Application number: 17/748,737
- Filed: 2022-05-19
- Published: 2023-11-23
- Granted: 2024-10-15
- Earliest claimed: 2022-05-19
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Merritt Funk; Barton Lane
- Web page: https://patentgrep.com/patent/US12119207B2

## CPC

- H01J 37/3211: {Antennas, e.g. particular shapes of coils}
- H01J 37/32165: {Plural frequencies}
- H01J 37/32183: {Matching circuits}
- H01J 37/32651: {Shields, e.g. dark space shields, Faraday shields}
- H01J 37/32146: {Amplitude modulation, includes pulsing}
- H01J 2237/327: Arrangements for generating the plasma
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

An apparatus for plasma processing includes a first resonating structure and a second resonating structure. The first resonating structure is coupled to a first RF generator through a first matching circuit. The second resonating structure surrounds the first resonating structure. The second resonating structure is coupled to a second RF generator through a second matching circuit.

## Claims

### Claim 1

An apparatus for plasma processing, the apparatus comprising:
a first resonating structure, the first resonating structure being coupled to a first RF generator through a first matching circuit; and
a second resonating structure surrounding the first resonating structure, the second resonating structure being coupled to a second RF generator through a second matching circuit.

### Claim 2 (depends on 1)

The apparatus of claim 1, wherein the first RF generator and the second RF generator are a same RF generator.

### Claim 3 (depends on 1)

The apparatus of claim 1, wherein the first resonating structure has a cylindrical shape.

### Claim 4 (depends on 1)

The apparatus of claim 1, further comprising a third resonating structure surrounding the second resonating structure.

### Claim 5 (depends on 1)

The apparatus of claim 1, wherein the first resonating structure is coupled to a ground plane through a first capacitor and the second resonating structure is coupled to the ground plane through a second capacitor.

### Claim 6 (depends on 5)

The apparatus of claim 5, wherein the first capacitor and the second capacitor are the same.

### Claim 7 (depends on 1)

The apparatus of claim 1, further comprising a shield between the first resonating structure and the second resonating structure.

### Claim 8 (depends on 7)

The apparatus of claim 7, wherein the shield is grounded.

### Claim 9 (depends on 7)

The apparatus of claim 7, wherein the shield is a floating part of a CLC circuit.

### Claim 10

An apparatus for plasma processing, the apparatus comprising:
a first resonating structure, the first resonating structure creating a first zone for a first plasma influenced by the first resonating structure; and
a second resonating structure, the second resonating structure creating a second zone for a second plasma influenced by the second resonating structure, wherein the second zone surrounds the first zone.

### Claim 11 (depends on 10)

The apparatus of claim 10, wherein the second resonating structure is driven by a first frequency through a first inductive coil, the first inductive coil being in the second resonating structure.

### Claim 12 (depends on 11)

The apparatus of claim 11, wherein a radiating structure of the first resonating structure is driven by coupling with a radiating structure of the second resonating structure.

### Claim 13 (depends on 11)

The apparatus of claim 11, wherein the first resonating structure is driven by a second frequency through the first inductive coil.

### Claim 14 (depends on 13)

The apparatus of claim 13, wherein the first frequency and the second frequency are supplied concurrently.

### Claim 15 (depends on 14)

The apparatus of claim 14, wherein the first frequency and the second frequency are supplied as interleaved pulses.

### Claim 16 (depends on 11)

The apparatus of claim 11, wherein the first inductive coil is floating.

### Claim 17 (depends on 11)

The apparatus of claim 11, wherein the first resonating structure is driven by a second frequency through a second inductive coil, the second inductive coil being in the first resonating structure, the first inductive coil and the second inductive coil being coupled to an RF power source through an RF splitter.

### Claim 18 (depends on 17)

The apparatus of claim 17, wherein respective powers supplied to the first inductive coil and the second inductive coil are configurable by varying inductances or capacitances of variable components of the RF splitter.

### Claim 19

An apparatus for plasma processing, the apparatus comprising:
a first cavity having a first resonant frequency, the first cavity being coupled through a first capacitor to a conductive plane; and
a second cavity having a second resonant frequency, the second cavity being surrounded by the first cavity, the second cavity being coupled through a second capacitor to the conductive plane.

### Claim 20 (depends on 19)

The apparatus of claim 19, wherein the first resonant frequency is the same as the second resonant frequency.