Atomic layer etching by electron wavefront

A method for atomic layer etching of a substrate by electron stimulated desorption, the method comprising:

• generating a volume of gaseous plasma of a uniform steady state composition in a positive column of a DC plasma proximate a substrate, thereby developing a floating potential at a surface of the substrate;
• adjusting the floating potential to a known reference potential;
• applying a biasing voltage to the substrate that is equal to zero volt with respect to the floating potential, thereby maintaining the uniform steady state composition;
• increasing the biasing voltage, thereby contacting electrons from the volume of gaseous plasma onto an atomic layer at the surface of the substrate;
• based on the increasing and the contacting, imparting an energy level to the contacting electrons that is insufficient for electron stimulation of quantum transitions in the atoms of the atomic layer;
• further increasing the biasing voltage, thereby increasing the energy level of the contacting electrons to a threshold energy level that is sufficient for the electron stimulation of the quantum transitions, thereby etching away the atomic layer by electron stimulated desorption.