# US 12,119,176 B2 · Supercapacitors and integrated assemblies containing supercapacitors > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,176 B2 - Document ID: US12119176B2 - Status: Granted - Kind: B2 - Application number: 17/179,890 - Filed: 2021-02-19 - Published: 2022-08-25 - Granted: 2024-10-15 - Earliest claimed: 2021-02-19 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Pankaj Sharma; Sidhartha Gupta - Web page: https://patentgrep.com/patent/US12119176B2 ## CPC - H01G 11/26: characterised by their structure, e.g. multi-layered, porosity or surface features - H01G 11/08: Structural combinations, e.g. assembly or connection, of hybrid or EDL capacitors with other electric components, at least one hybrid or EDL capacitor being the main component - H01G 11/28: arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives - H01G 11/36: Nanostructures, e.g. nanofibres, nanotubes or fullerenes - H01G 11/86: specially adapted for electrodes (carbonisation or activation of carbon for the manufacture of electrodes H01G11/34) - H10B 12/00: Dynamic random access memory [DRAM] devices - H10B 99/00: Subject matter not provided for in other groups of this subclass - H10D 1/043: {using patterning processes to form electrode extensions, e.g. etching} - H10D 1/696: {comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688)} - H10D 1/714: {having horizontal extensions} - H10D 1/716: {having vertical extensions} - H10W 90/00: Package configurations - G11C 5/141: {Battery and back-up supplies} - H01G 11/52: Separators - H01G 11/58: Liquid electrolytes - Y02E 60/13: Energy storage using capacitors - H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10) - H10B: ELECTRONIC MEMORY DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - G11C: STATIC STORES (semiconductor memory devices H10B) - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract Some embodiments include an integrated assembly having a supercapacitor supported by a semiconductor substrate. The supercapacitor includes first and second electrode bases. The first electrode base includes first laterally-projecting regions, and the second electrode base includes second laterally-projecting regions which are interdigitated with the first laterally-projecting regions. A distance between the first and second laterally-projecting regions is less than or equal to about 500 nm. Carbon nanotubes extend upwardly from the first and second electrode bases. The carbon nanotubes are configured as a first membrane structure associated with the first electrode base and as a second membrane structure associated with the second electrode base. Pseudocapacitive material is dispersed throughout the first and second membrane structures. Electrolyte material is within and between the first and second membrane structures. Some embodiments include methods of forming integrated assemblies. ## Claims ### Claim 1 An integrated assembly comprising a supercapacitor supported by a semiconductor substrate; the supercapacitor including: first and second electrode bases disposed over an insulative material, the first and second electrodes each comprising metal nitride directly against the insulative material, a buffer layer consisting of aluminum over the metal nitride and a catalyst layer consisting of iron over the buffer layer; the first electrode base including first laterally-projecting regions, and the second electrode base including second laterally-projecting regions which are interdigitated with the first laterally-projecting regions; a distance between the first and second laterally-projecting regions being less than or equal to about 500 nm; carbon nanotubes extending upwardly from the first and second electrode bases; the carbon nanotubes being configured as a first membrane structure associated with the first electrode base and as a second membrane structure associated with the second electrode base; pseudocapacitive material dispersed throughout the first and second membrane structures; and electrolyte material within and between the first and second membrane structures. ### Claim 2 (depends on 1) The integrated assembly of claim 1 wherein the integrated assembly includes a memory array directly under the supercapacitor. ### Claim 3 (depends on 2) The integrated assembly of claim 2 wherein the memory array is directly under only a portion of the supercapacitor. ### Claim 4 (depends on 1) The integrated assembly of claim 1 wherein the pseudocapacitive material comprises electrically conductive polymer, transition metal oxide and/or transition metal sulfide. ### Claim 5 (depends on 1) The integrated assembly of claim 1 wherein the pseudocapacitive material comprises one or more of MnO, RuO and FeO, where the chemical formulas indicate primary constituents rather than specific stoichiometries. ### Claim 6 (depends on 1) The integrated assembly of claim 1 wherein the electrolyte material comprises sulfuric acid and polyvinyl alcohol. ### Claim 7 (depends on 1) The integrated assembly of claim 1 wherein the carbon nanotubes have a vertical height of at least about 50 μm. ### Claim 8 (depends on 1) The integrated assembly of claim 1 wherein the carbon nanotubes have a vertical height of at least about 60 μm. ### Claim 9 (depends on 1) The integrated assembly of claim 1 wherein the carbon nanotubes have an average tube diameter of less than or equal to about 7 nm. ### Claim 10 (depends on 1) The integrated assembly of claim 1 wherein the carbon nanotubes have an average maximal distance across the individual nanotubes of less than or equal to about 7 nm. ### Claim 11 (depends on 1) The integrated assembly of claim 1 wherein the carbon nanotubes are at a density of at least about 5×1011/cm2 within the first and second membrane structures. ### Claim 12 (depends on 1) The integrated assembly of claim 1 wherein the carbon nanotubes have an average tube diameter within a range of from about 3 nm to about 7 nm. ### Claim 13 (depends on 1) The integrated assembly of claim 1 wherein the distance between the first and second laterally-projecting regions is within a range of from about 5 nm to about 500 nm. ### Claim 14 (depends on 1) The integrated assembly of claim 1 wherein the distance between the first and second laterally-projecting regions is within a range of from about 50 nm to about 500 nm. ### Claim 15 (depends on 1) The integrated assembly of claim 1 wherein the distance between the first and second laterally-projecting regions is less than or equal to about 250 nm. ### Claim 16 (depends on 1) The integrated assembly of claim 1 wherein the distance between the first and second laterally-projecting regions is less than or equal to about 150 nm. ### Claim 17 (depends on 1) The integrated assembly of claim 1 wherein: the first laterally-projecting regions project in a first direction and have first widths along a second direction orthogonal to said first direction; the second laterally-projecting regions project in a third direction opposite to the first direction, with the second direction being orthogonal to the third direction; the second laterally-projecting regions have second widths along the second direction; and the first and second widths are less than or equal to about 100 μm. ### Claim 18 (depends on 17) The integrated assembly of claim 17 wherein the first and second widths are within a range of from about 3 μm to about 100 μm. ### Claim 19 (depends on 17) The integrated assembly of claim 17 wherein: the first laterally-projecting regions have first lengths along the first direction; the second laterally-projecting regions have second lengths along the third direction; and the first and second lengths are at least about 1000 μm. ### Claim 20 (depends on 19) The integrated assembly of claim 19 wherein the first and second lengths are within a range of from about 1000 μm to about 10,000 μm. ### Claim 21 (depends on 17) The integrated assembly of claim 17 wherein: the first laterally-projecting regions project outwardly from a first mainstem region, with said first mainstem region having a first mainstem width along the first direction; the second laterally-projecting regions project outwardly from a second mainstem region, with said second mainstem region having a second mainstem width along the third direction; and the first and second mainstem widths are less than or equal to about 100 μm. ### Claim 22 (depends on 21) The integrated assembly of claim 21 wherein the first and second mainstem widths are within a range of from about 3 μm to about 100 μm. ### Claim 23 (depends on 1) The integrated assembly of claim 1 wherein the first electrode base comprises at least 200 of the first laterally-projecting regions, and wherein the second electrode base comprises at least 200 of the second laterally-projecting regions.