# US 12,119,129 B2 · EUV lithography apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,129 B2 - Document ID: US12119129B2 - Status: Granted - Kind: B2 - Application number: 18/120,905 - Filed: 2023-03-13 - Published: 2023-07-06 - Granted: 2024-10-15 - Earliest claimed: 2021-08-27 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company, Ltd. - Inventors: Cheng Hung Tsai; Sheng-Kang Yu; Shang-Chieh Chien; Heng-Hsin Liu; Li-Jui Chen - Web page: https://patentgrep.com/patent/US12119129B2 ## CPC - G02B 19/0023: {at least one surface having optical power} - G21K 1/06: using diffraction, refraction or reflection, e.g. monochromators (G21K1/10, G21K7/00 take precedence) - G02B 5/0891: {Ultraviolet [UV] mirrors (apparatus for microlithography exposure G03F7/70; X-ray multilayer structures G21K1/06)} - G02B 19/0095: {for use with ultraviolet radiation} - G02B 26/101: {with both horizontal and vertical deflecting means, e.g. raster or XY scanners (colour television using laser beams scanning a display screen H04N9/3129)} - G03F 7/70033: {by plasma extreme ultraviolet [EUV] sources} - G03F 7/702: {Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems} - G03F 7/7055: {Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption} - G03F 7/70916: {Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps} - H05G 2/0035: {the material containing metals as principal radiation-generating components} - H05G 2/0086: {Optical arrangements for conveying the laser beam to the plasma generation location} - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS - G21K: HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H05G: X-RAY TECHNIQUE (investigating or analysing materials by the use of X-rays G01N23/00; apparatus for X-ray photography G03B42/02; X-ray tubes H01J35/00; TV systems having X-ray input H04N5/321) ## Abstract An extreme ultra violet (EUV) light source apparatus includes a metal droplet generator, a collector mirror, an excitation laser inlet port for receiving an excitation laser, a first mirror configured to reflect the excitation laser that passes through a zone of excitation, and a second mirror configured to reflect the excitation laser reflected by the first mirror. ## Claims ### Claim 1 An extreme ultra violet (EUV) light source apparatus, comprising: a collector mirror; an excitation laser inlet port configured to receive an excitation laser; a first mirror configured to reflect the excitation laser that passes through a zone of excitation; and a second mirror configured to reflect the excitation laser reflected by the first mirror. ### Claim 2 (depends on 1) The EUV light source apparatus of claim 1, wherein the second mirror is configured to reflect the excitation laser reflected by the first mirror toward the zone of excitation. ### Claim 3 (depends on 2) The EUV light source apparatus of claim 2, wherein the second mirror is configured to focus the excitation laser reflected by the first mirror at the zone of excitation. ### Claim 4 (depends on 1) The EUV light source apparatus of claim 1, wherein the second mirror is configured to reflect the excitation laser reflected by the first mirror toward the collector mirror. ### Claim 5 (depends on 1) The EUV light source apparatus of claim 1, wherein the second mirror is configured to reflect the excitation laser reflected by the first mirror toward a metal droplet catcher. ### Claim 6 (depends on 5) The EUV light source apparatus of claim 5, wherein the second mirror is configured to reflect the excitation laser reflected by the first mirror toward the metal droplet catcher after passing through the zone of excitation. ### Claim 7 (depends on 1) The EUV light source apparatus of claim 1, wherein the second mirror is configured to reflect the excitation laser reflected by the first mirror toward a debris collection mechanism. ### Claim 8 (depends on 1) The EUV light source apparatus of claim 1, wherein at least one of the first mirror or the second mirror is a flat mirror. ### Claim 9 An extreme ultra violet (EUV) light source apparatus, comprising: a collector mirror; an excitation laser inlet port configured to receive an excitation laser; a first mirror configured to reflect the excitation laser that passes through a zone of excitation; a second mirror configured to reflect the excitation laser reflected by the first mirror; and a third mirror configured to reflect the excitation laser reflected by the second mirror. ### Claim 10 (depends on 9) The EUV light source apparatus of claim 9, wherein the second mirror is configured to reflect the excitation laser reflected by the first mirror toward the zone of excitation. ### Claim 11 (depends on 10) The EUV light source apparatus of claim 10, wherein the second mirror is configured to focus the excitation laser reflected by the first mirror at the zone of excitation. ### Claim 12 (depends on 9) The EUV light source apparatus of claim 9, wherein the third mirror is configured to reflect the excitation laser reflected by the first mirror toward a debris collection mechanism. ### Claim 13 (depends on 9) The EUV light source apparatus of claim 9, further comprising a controller configured to control at least one of the first mirror or the second mirror. ### Claim 14 (depends on 13) The EUV light source apparatus of claim 13, further comprising a sensor configured to monitor or detect deposition of metal debris, wherein the controller is configured to control at least one of the first mirror or the second mirror based on a monitoring result of the sensor. ### Claim 15 (depends on 14) The EUV light source apparatus of claim 14, wherein the sensor is a camera. ### Claim 16 (depends on 14) The EUV light source apparatus of claim 14, wherein when the sensor detects an excessive debris deposition above a threshold, the controller is configured to control the at least one of the first mirror or the second mirror to direct the excitation laser reflected by the second mirror to the excessive debris deposition. ### Claim 17 (depends on 13) The EUV light source apparatus of claim 13, wherein the controller is configured to control at least one of the first mirror or the second mirror to locally heat an interior portion of the EUV light source apparatus. ### Claim 18 (depends on 13) The EUV light source apparatus of claim 13, wherein at least one of the first mirror or the second mirror is a flat mirror. ### Claim 19 An extreme ultra violet (EUV) light source apparatus, comprising: a collector mirror; an excitation laser inlet port configured to receive an excitation laser; and a first mirror configured to reflect the excitation laser that passes through a zone of excitation toward a target location inside the EUV light source apparatus. ### Claim 20 (depends on 19) The EUV light source apparatus of claim 19, further comprising a controller configured to control the first mirror to change the target location.