Transition metal chalcogenide thin-layer material, preparation method and application thereof

A preparation method for a transition metal chalcogenide thin-layer material, comprising:

• S1:
• uniformly spreading a transition metal source between two glass substrates to prepare a sandwich structure consisting of a bottom substrate, the transition metal source, and an upper substrate, a thickness of the upper substrate is smaller than that of the bottom substrate, a thickness of the bottom substrate ranges from 1.00 mm to 50.00 mm, and a thickness of the upper substrate ranges from 0.01 mm to 0.50 mm;
• wherein areas of the two glass substrates are both 1 cm2 to 100 cm2, and a load amount of the transition metal source on the glass substrates is 0.2 mg/cm2 to 10 mg/cm2, wherein a material of the glass substrates includes at least one of soda-lime glass and lead potassium glass;
• S2:
• performing a heat treatment on the sandwich structure to fuse and bond the two glass substrates together, wherein a temperature of the heat treatment is 100° C. to 720° C.;
• and
• S3:
• performing a chemical vapor deposition reaction on a chalcogen element source and the sandwich structure treated in S2 under the protection of a protective gas;
• wherein the transition metal source in the bonded glass substrates is heated to dissolve and diffuse at a reaction temperature, separated out on the surfaces of the glass substrates, and reacts with the chalcogen element source;
• and the chalcogen element source comprises one or more of a sulfur source, a selenium source and a tellurium source.