Method of forming monocrystalline nickel-titanium films on single crystal silicon substrates using seed layers
AssigneeArizona Board of Regents on behalf of Arizona State University
InventorsJagannathan Rajagopalan, Rohit Berlia
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Abstract
A method of forming a monocrystalline nitinol film on a single crystal silicon wafer can comprise depositing a first seed layer of a first metal on the single crystal silicon wafer, the first seed layer growing epitaxially on the single crystal silicon wafer in response to the depositing the first seed layer of the first metal; and depositing the monocrystalline nitinol film on a final seed layer, the monocrystalline nitinol film growing epitaxially on the final seed layer in response to the depositing the monocrystalline nitinol film. The method can form a multilayer stack for a micro-electromechanical system MEMS device.
Claims8
A method of forming a monocrystalline nitinol film on a single crystal silicon wafer, comprising:
- etching, via a hydrofluoric acid (HF) etching process, a surface of the single crystal silicon wafer;
- depositing a first seed layer of a first metal on the single crystal silicon wafer, with the first seed layer growing epitaxially on the single crystal silicon wafer, wherein the first metal is iron;
- depositing a second seed layer of a second metal on the first seed layer to form a final seed layer, with the second seed layer growing epitaxially on the first seed layer, wherein the second metal is chromium;
- and
- depositing the monocrystalline nitinol film on the final seed layer, with the monocrystalline nitinol film growing epitaxially on the final seed layer to form a deposited monocrystalline nitinol film with a thickness of less than 100 nm.
Dependencies are inferred from the claim text.