# US 12,114,502 B2 · Semiconductor storage device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,114,502 B2 - Document ID: US12114502B2 - Status: Granted - Kind: B2 - Application number: 18/335,198 - Filed: 2023-06-15 - Published: 2023-10-12 - Granted: 2024-10-08 - Earliest claimed: 2019-08-29 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Hiroshi Kanno - Web page: https://patentgrep.com/patent/US12114502B2 ## CPC - H10B 41/10: characterised by the top-view layout - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 43/10: characterised by the top-view layout - H10D 62/299: {having lateral doping variations (IGFETs having lightly doped source or drain extensions H10D30/601)} - H10B: ELECTRONIC MEMORY DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract The semiconductor storage device of an embodiment includes a first conductive layer, a stack disposed above the first conductive layer and including a plurality of second conductive layers in a first direction, and a columnar body that extends in the first direction through the stack, and includes a semiconductor layer and a charge storage film provided between the plurality of conductive layers and the semiconductor layer. A first conductive layer out of the plurality of conductive layers is connected to the semiconductor layer, and the semiconductor layer includes a first region in which a concentration of an n-type impurity is higher than a concentration of a p-type impurity, a second region in which a concentration of a p-type impurity is higher than a concentration of an n-type impurity, and a third region contacted to the first conductive layer and disposed closer to the first region than the second region in the first direction. ## Claims ### Claim 1 A semiconductor storage device, comprising: a first conductive layer including a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer stacked in order in a first direction; a stack disposed above the first conductive layer and including a plurality of second conductive layers stacked in the first direction; and a columnar body that extends in the first direction through the stack, and includes a fourth semiconductor layer and a charge storage film disposed between the plurality of second conductive layers and the fourth semiconductor layer, the first conductive layer is in contact with the fourth semiconductor layer, the fourth semiconductor layer includes a first region in which a concentration of an n-type impurity is higher than a concentration of a p-type impurity, a second region in which a concentration of the p-type impurity is higher than a concentration of the n-type impurity, and a third region in contact with the second semiconductor layer and disposed closer to the first region than the second region in the first direction, the second semiconductor layer includes a first portion, a second portion, and a third portion, the first portion contains the n-type impurity, the second portion contains the p-type impurity, the third portion contains a carbon element, and at least a portion of the second portion is disposed between the first portion and the fourth semiconductor layer, and at least a portion of the third portion is disposed between the first portion and the second portion. ### Claim 2 (depends on 1) The semiconductor storage device according to claim 1, wherein the first region extends from a boundary between the second semiconductor layer and the fourth semiconductor layer in the first direction. ### Claim 3 (depends on 1) The semiconductor storage device according to claim 1, wherein the fourth semiconductor layer further includes a fourth region, and the fourth region does not contain the n-type impurity and the p-type impurity or has a lower concentration of the p-type impurity and the n-type impurity than the second region. ### Claim 4 (depends on 1) The semiconductor storage device according to claim 1, wherein a concentration of the n-type impurity at a boundary between the second semiconductor layer and the fourth semiconductor layer is higher than a concentration of the n-type impurity at a boundary between the first region and the second region. ### Claim 5 (depends on 1) The semiconductor storage device according to claim 1, wherein the concentration of the n-type impurity of the fourth semiconductor layer decreases with distance from a boundary between the second semiconductor layer and the fourth semiconductor layer in the first direction. ### Claim 6 (depends on 1) The semiconductor storage device according to claim 1, wherein the concentration of the p-type impurity of the fourth semiconductor layer decreases with distance from a boundary between the second semiconductor layer and the fourth semiconductor layer in the first direction. ### Claim 7 (depends on 1) The semiconductor storage device according to claim 1, wherein the first portion further contains a carbon element. ### Claim 8 (depends on 1) The semiconductor storage device according to claim 1, the second region is in a same level of a lowermost layer of the plurality of second conductive layers. ### Claim 9 (depends on 1) The semiconductor storage device according to claim 1, wherein the stack includes a first stack and a second stack, the first stack disposed closer to the first conductive layer than the second stack, and the second region is in a same level of the first stack. ### Claim 10 (depends on 1) The semiconductor storage device according to claim 1, wherein the first region is an n-type semiconductor. ### Claim 11 (depends on 1) The semiconductor storage device according to claim 1, wherein the second region is a p-type semiconductor. ### Claim 12 (depends on 1) The semiconductor storage device according to claim 1, wherein the n-type impurity contains phosphorus. ### Claim 13 (depends on 1) The semiconductor storage device according to claim 1, wherein the p-type impurity contains boron. ### Claim 14 (depends on 1) The semiconductor storage device according to claim 1, wherein the stack is disposed on a logic circuit.