# US 12,114,492 B2 · Memories having vertically stacked conductive filled structures > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,114,492 B2 - Document ID: US12114492B2 - Status: Granted - Kind: B2 - Application number: 17/071,980 - Filed: 2020-10-15 - Published: 2021-03-04 - Granted: 2024-10-08 - Earliest claimed: 2017-12-20 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Jordan D. Greenlee; John Mark Meldrim; Everett A. McTeer - Web page: https://patentgrep.com/patent/US12114492B2 ## CPC - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 43/10: characterised by the top-view layout - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10P 14/432: {using selective deposition} - H10B 41/10: characterised by the top-view layout - H10D 64/0112: {using conductive layers comprising silicides} - H10P 14/418: {the conductive layers comprising transition metals} - H10B: ELECTRONIC MEMORY DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Some embodiments include a method in which an assembly is formed to have voids within a stack, and to have slits adjacent the voids. Peripheral boundaries of the voids have proximal regions near the slits and distal regions adjacent the proximal regions. A material is deposited within the voids under conditions which cause the material to form to a greater thickness along the distal regions than along the proximal regions. Some embodiments include an assembly having a stack of alternating first and second levels. The second levels include conductive material. Panel structures extend through the stack. The conductive material within the second levels has outer edges with proximal regions near the panel structures and distal regions adjacent the proximal regions. Interface material is along the outer edges of the conductive material and has a different composition along the proximal regions than along the distal regions. ## Claims ### Claim 1 An assembly, comprising: a stack of alternating first and second levels; the first levels comprising insulative material, and the second levels comprising conductive material; channel structures extending through the stack; the second levels comprising distal regions adjacent the channel structures and proximal regions spaced from the channel structures; and the conductive material of the second levels comprising: a conductive core in the distal and proximal regions; and a liner of seed material surrounding at least a portion of the conductive core in at least one of the distal and proximal regions wherein the liner of seed material exists in the proximal regions, the liner of seed comprising a first composition and a second composition over the first composition, the first composition different from the second composition. ### Claim 2 (depends on 1) The assembly of claim 1 wherein the liner of seed material surrounds an entirety of the conductive core in the distal regions. ### Claim 3 (depends on 1) The assembly of claim 1 wherein the liner of seed material surrounds at least a portion of the conductive core in the proximal regions. ### Claim 4 (depends on 1) The assembly of claim 1 wherein the liner of seed material surrounds only a portion of the conductive core in the proximal regions. ### Claim 5 (depends on 1) The assembly of claim 1 wherein the liner of seed material does not surround any portion of the conductive core in the proximal regions. ### Claim 6 (depends on 1) The assembly of claim 1 wherein the liner of seed material surrounds at least a portion of the conductive core in both of the proximal and distal regions, the liner of seed material being thicker in the distal regions. ### Claim 7 (depends on 1) The assembly of claim 1 wherein the liner of seed material surrounds at least a portion of the conductive core in the distal regions. ### Claim 8 (depends on 1) The assembly of claim 1 wherein the conductive core is thicker in the distal regions than in the proximal regions. ### Claim 9 (depends on 1) The assembly of claim 1 wherein the second composition is configured as a laminate over the first composition. ### Claim 10 (depends on 1) The assembly of claim 1 wherein the second composition is configured as a gradient of material over the first composition. ### Claim 11 (depends on 10) The assembly of claim 10 wherein the gradient of material of the second composition increases as second composition extends upward from the first composition. ### Claim 12 An assembly comprising: a stack of alternating first and second levels; the first levels comprising insulative material, and the second levels comprising conductive material; channel structures extending through the stack; the second levels comprising distal regions adjacent the channel structures and proximal regions spaced from the channel structures; and the conductive material of the second levels comprising: a conductive core in the distal and proximal regions; a liner of seed material surrounding at least a portion of the conductive core in at least one of the distal and proximal regions; and wherein the liner of seed material exists in the distal regions, the liner of seed comprising a first composition and a second composition over the first composition, the first composition different from the second composition. ### Claim 13 (depends on 12) The assembly of claim 12 wherein the second composition is configured as a laminate over the first composition. ### Claim 14 (depends on 12) The assembly of claim 12 wherein the second composition is configured as a gradient of material over the first composition. ### Claim 15 (depends on 14) The assembly of claim 14 wherein the gradient of material of the second composition increases as second composition extends upward from the first composition. ### Claim 16 (depends on 1) The assembly of claim 1 further comprising an insulative panel extending through the stack. ### Claim 17 An assembly, comprising: a stack of alternating first and second levels; the first levels comprising insulative material, and the second levels comprising conductive material; channel structures extending through the stack; the second levels comprising distal regions adjacent the channel structures and proximal regions spaced from the channel structures; and the conductive material of the second levels comprising: a conductive core in the distal and proximal regions; a liner of seed material surrounding at least a portion of the conductive core in at least one of the distal and proximal regions; and wherein the liner of seed material exists in both of the distal and proximal regions, the liner in the distal regions comprising a composition different from a composition of the liner in the proximal regions. ### Claim 18 An assembly, comprising: a stack of alternating first and second levels; the first levels comprising insulative material, and the second levels comprising conductive material; channel structures extending through the stack; the second levels comprising distal regions adjacent the channel structures and proximal regions spaced from the channel structures; and the conductive material of the second levels comprising: a conductive core in the distal and proximal regions; and a liner of seed material surrounding at least a portion of the conductive core in at least one of the distal and proximal regions; wherein the liner of seed material exists in the proximal regions, the liner of seed comprising a first composition and a second composition over the first composition, the first composition different from the second composition. ### Claim 19 (depends on 18) The assembly of claim 18 wherein the second composition is configured as a laminate over the first composition. ### Claim 20 (depends on 18) The assembly of claim 18 wherein the second composition is configured as a gradient of material over the first composition. ### Claim 21 (depends on 20) The assembly of claim 20 wherein the gradient of material of the second composition increases as second composition extends upward from the first composition. ### Claim 22 An assembly, comprising: a stack of alternating first and second levels; the first levels comprising insulative material, and the second levels comprising conductive material; channel structures extending through the stack; the second levels comprising distal regions adjacent the channel structures and proximal regions spaced from the channel structures; and the conductive material of the second levels comprising: a conductive core in the distal and proximal regions; and a liner of seed material surrounding at least a portion of the conductive core in at least one of the distal and proximal regions; wherein the liner of seed material exists in the distal regions, the liner of seed comprising a first composition and a second composition over the first composition, the first composition different from the second composition. ### Claim 23 (depends on 22) The assembly of claim 22 wherein the second composition is configured as a laminate over the first composition. ### Claim 24 (depends on 22) The assembly of claim 22 wherein the second composition is configured as a gradient of material over the first composition. ### Claim 25 (depends on 24) The assembly of claim 24 wherein the gradient of material of the second composition increases as second composition extends upward from the first composition. ### Claim 26 An assembly, comprising: a stack of alternating first and second levels; the first levels comprising insulative material, and the second levels comprising conductive material; channel structures extending through the stack; the second levels comprising distal regions adjacent the channel structures and proximal regions spaced from the channel structures; and the conductive material of the second levels comprising: a conductive core in the distal and proximal regions; and a liner of seed material surrounding at least a portion of the conductive core in at least one of the distal and proximal regions; wherein the liner of seed material exists in both of the distal and proximal regions, the liner in the distal regions comprising a composition different from a composition of the liner in the proximal regions. ### Claim 27 An assembly, comprising: a stack of alternating first and second levels; the first levels comprising insulative material, and the second levels comprising conductive material; channel structures extending through the stack; the second levels comprising distal regions adjacent the channel structures and proximal regions spaced from the channel structures; and the conductive material of the second levels comprising a liner of seed material existing in both of the distal and proximal regions, the liner in the distal regions comprising a composition different from a composition of the liner in the proximal regions. ### Claim 28 (depends on 27) The assembly of claim 27 wherein the composition in one of the distal and proximal regions comprises a dopant. ### Claim 29 (depends on 27) The assembly of claim 27 wherein the difference in the compositions between the distal and proximal regions is the difference in a concentration of a dopant. ### Claim 30 (depends on 27) The assembly of claim 27 wherein the difference in the compositions between the distal and proximal regions is the difference in a concentration of nitrogen. ### Claim 31 (depends on 27) The assembly of claim 27 wherein the difference in the compositions between the distal and proximal regions is the difference in metals.