# US 12,113,329 B2 · Stem for semiconductor package including eyelet and lead

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- Number: US 12,113,329 B2
- Document ID: US12113329B2
- Status: Granted
- Kind: B2
- Application number: 17/645,099
- Filed: 2021-12-20
- Published: 2022-06-30
- Granted: 2024-10-08
- Earliest claimed: 2020-12-28
- Assignees: Shinko Electric Industries Co., Ltd.
- Applicants: Shinko Electric Industries Co., Ltd.
- Inventors: Masao Kainuma
- Web page: https://patentgrep.com/patent/US12113329B2

## CPC

- H01S 5/0231: Stems
- F21V 31/005: {Sealing arrangements therefor}
- H01S 5/02212: Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
- H01S 5/02345: Wire-bonding
- H10H 20/8506: {Containers}
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10W 70/68: Shapes or dispositions thereof
- H10W 70/6875: {being on a metallic substrate, e.g. insulated metal substrates [IMS]}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- F21V: FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A stem for a semiconductor package includes an eyelet having a through hole formed therethrough, a lead extending through the through hole, and a sealing part configured to seal the through hole around the lead, wherein a main material of the eyelet is 45% Ni—Fe, and wherein a thermal expansion coefficient of the eyelet is greater than a thermal expansion coefficient of the sealing part.

## Claims

### Claim 1

A stem for a semiconductor package, comprising:
an eyelet having a through hole formed therethrough;
a lead extending through the through hole; and
a sealing part configured to seal the through hole around the lead,
wherein a main material of the eyelet has a nickel content of 45% and an iron content of 55%, and
wherein a thermal expansion coefficient of the eyelet is greater than a thermal expansion coefficient of the sealing part.

### Claim 2 (depends on 1)

The stem for a semiconductor package as claimed in claim 1, wherein a main material of the sealing part is glass.

### Claim 3 (depends on 2)

The stem for a semiconductor package as claimed in claim 2, wherein a relative permittivity of the glass is greater than or equal to 4 and less than or equal to 7.

### Claim 4 (depends on 1)

The stem for a semiconductor package as claimed in claim 1, wherein a thermal expansion coefficient of the lead is less than the thermal expansion coefficient of the eyelet and greater than the thermal expansion coefficient of the sealing part.

### Claim 5 (depends on 4)

The stem for a semiconductor package as claimed in claim 4, wherein a main material of the lead is an alloy of nickel, iron, and cobalt.

### Claim 6 (depends on 1)

The stem for a semiconductor package as claimed in claim 1, further comprising a substrate fixed to the eyelet,
wherein the lead is electrically coupled to an interconnect of the substrate.

### Claim 7 (depends on 6)

The stem for a semiconductor package as claimed in claim 6, wherein the substrate is made of ceramic.

### Claim 8 (depends on 7)

The stem for a semiconductor package as claimed in claim 7, wherein the substrate is made of aluminum oxide or aluminum nitride.

### Claim 9 (depends on 6)

The stem for a semiconductor package as claimed in claim 6, wherein the lead serves as a signal path which is electrically coupled to a light emitting device mounted to the eyelet.

### Claim 10 (depends on 6)

The stem for a semiconductor package as claimed in claim 6, wherein the eyelet has an additional through hole, and
wherein an additional lead extends through the additional through hole, and a wire diameter of the lead is less than a wire diameter of the additional lead.