# US 12,113,321 B1 · Terminal

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- Number: US 12,113,321 B1
- Document ID: US12113321B1
- Status: Granted
- Kind: B1
- Application number: 18/368,200
- Filed: 2023-09-14
- Published: 2024-10-10
- Granted: 2024-10-08
- Earliest claimed: 2023-04-10
- Assignees: Napra Co., Ltd.
- Applicants: Napra Co., Ltd.
- Inventors: Shigenobu Sekine
- Web page: https://patentgrep.com/patent/US12113321B1

## CPC

- H01R 4/58: characterised by the form or material of the contacting members (H01R4/01 takes precedence)
- H01B 1/026: {Alloys based on copper}
- H01R 13/03: characterised by the material, e.g. plating, or coating materials
- H01R: ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})

## Abstract

According to this invention, provided is a terminal having a plating layer formed on a surface of a base, the plating layer having a structure in which an intermetallic compound crystal that contains Sn, Cu, Cr and Ni, is dispersed in a parent phase that contains Sn and an Sn—Cu alloy.

## Claims

### Claim 1

A terminal having a plating layer formed on a surface of a base,
the plating layer having a structure in which an intermetallic compound crystal that contains Sn, Cu, Cr and Ni, is dispersed in a parent phase that contains Sn and an Sn—Cu alloy,
wherein the intermetallic compound crystal has a chemical composition represented by:
50 to 70% by mass of Sn;
30 to 50% by mass of Cu;
0.001 to 3% by mass of Cr; and
0.01 to 6.5% by mass of Ni.

### Claim 2 (depends on 1)

The terminal according to claim 1, wherein the plating layer has a chemical composition represented by:
0.7 to 15% by mass of Cu;
0.001 to 1% by mass of Cr;
0.01 to 5% by mass of Ni;
0.1% by mass or less of an inevitable impurity and the balance of Sn,
and the parent phase has a chemical composition represented by 5% by mass or less of Cu, 1% by mass or less of Ni, 1% by mass or less of Cr, 0.1% by mass or less of an inevitable impurity and the balance of Sn.

### Claim 3 (depends on 1)

The terminal according to claim 1, further comprising a layer of titanium, nickel or nickel alloy formed under the plating layer.

### Claim 4 (depends on 1)

The terminal according to claim 1, wherein the base comprises aluminum, aluminum alloy, copper, copper alloy or stainless steel.

### Claim 5 (depends on 1)

The terminal according to claim 1, wherein the base comprises Si, SiC or GaN.

### Claim 6

A bump having a plating layer formed on a surface of a base,
the plating layer having a structure in which an intermetallic compound crystal that contains Sn, Cu, Cr and Ni, is dispersed in a parent phase that contains Sn and an Sn—Cu alloy,
wherein the intermetallic compound crystal has a chemical composition represented by:
50 to 70% by mass of Sn:
30 to 50% by mass of Cu;
0.001 to 3% by mass of Cr; and
0.01 to 6.5% by mass of Ni.