# US 12,113,293 B2 · Antenna-on-package including multiple types of antenna

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- Number: US 12,113,293 B2
- Document ID: US12113293B2
- Status: Granted
- Kind: B2
- Application number: 18/169,682
- Filed: 2023-02-15
- Published: 2023-06-22
- Granted: 2024-10-08
- Earliest claimed: 2020-04-17
- Assignees: Texas Instruments Incorporated
- Applicants: Texas Instruments Incorporated
- Inventors: Yiqi Tang; Rajen Manicon Murugan
- Web page: https://patentgrep.com/patent/US12113293B2

## CPC

- H01Q 23/00: Antennas with active circuits or circuit elements integrated within them or attached to them
- H01Q 1/2283: {mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package}
- H01Q 9/0407: {Substantially flat resonant element parallel to ground plane, e.g. patch antenna (dipole H01Q9/285; monopole H01Q9/40)}
- H01Q 9/285: {Planar dipole (H01Q9/065 takes precedence; patch antenna H01Q9/0407)}
- H01Q 13/02: Waveguide horns
- H01Q 13/085: {Slot-line radiating ends}
- H01Q 21/28: Combinations of substantially independent non-interacting antenna units or systems {(multiple beam H01Q25/00)}
- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers}
- H10W 90/00: Package configurations
- H10W 44/248: {for antennas}
- H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40)
- H10W 72/073: {of die-attach connectors}
- H10W 72/874: {On different surfaces}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H01Q: ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B6/72)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An AIP includes a package substrate including a top layer including a top metal layer including a first antenna type and a second antenna type, and a bottom layer including a bottom dielectric and a metal layer including a first and second contact pad and filled vias, and an IC embedded therein. Bond pads of an IC are coupled by a connection including≥1 filled via for connecting to the top and/or bottom metal layer. A first metal pillar is between the first contact pad and first antenna, and a second metal pillar is between the second contact pad and second antenna. A first filled via is coupled to the first metal pillar providing a transmission line from the first contact pad to the first antenna. A second filled via is coupled to the first metal pillar providing a transmission line from the second contact pad to the second antenna.

## Claims

### Claim 1

An antenna in package (AIP), comprising:
a plurality of metal pillars including a first metal pillar electrically coupled between a first contact pad and a first antenna and a second metal pillar electrically coupled between a second contact pad and a second antenna, the first antenna and the second antenna collectively include at least two of a patch antenna, a horn antenna, a bow-tie antenna, and a Vivaldi antenna; and
wherein at least a first of a plurality of filled vias is electrically coupled to the first metal pillar for providing a first transmission line from the first contact pad to the first antenna, and wherein at least a second of the plurality of filled vias is electrically coupled to the second metal pillar for providing a second transmission line from the second contact pad to the second antenna.

### Claim 2 (depends on 1)

The AIP of claim 1, further comprising an application printed circuit board (PCB), wherein the AIP is assembled on a top surface of the PCB.

### Claim 3 (depends on 1)

The AIP of claim 1, wherein the first antenna and the second antenna form part of a top metal layer in the AIP.

### Claim 4 (depends on 3)

The AIP of claim 3, wherein the first antenna and the second antenna each comprise a millimeter wave antenna.

### Claim 5 (depends on 1)

The AIP of claim 1, wherein a width and a line spacing for a top metal layer in the AIP and for a bottom metal layer in the AIP both include a dimension that is less than or equal to 10 μm.

### Claim 6 (depends on 1)

The AIP of claim 1, wherein a thickness of the AIP is less than or equal to 600 μm.

### Claim 7

An antenna in package (AIP), comprising:
a plurality of bond pads electrically coupled to at least one of a top metal layer and a bottom metal layer;
a plurality of metal pillars including a first metal pillar electrically coupled between a first contact pad and a first antenna and a second metal pillar electrically coupled between a second contact pad and a second antenna;
wherein at least a first of a plurality of filled vias is electrically coupled to the first metal pillar for providing a first transmission line from the first contact pad to the first antenna, and wherein at least a second of the plurality of filled vias is electrically coupled to the second metal pillar for providing a second transmission line from the second contact pad to the second antenna;
a top intermediate layer below a top layer including a top intermediate metal layer and a top intermediate dielectric layer, a bottom intermediate layer below the top intermediate layer including a bottom intermediate metal layer and a bottom intermediate dielectric layer; and
wherein the bottom intermediate dielectric layer surrounds a majority of a surface area of an IC die.

### Claim 8 (depends on 7)

The AIP of claim 7, wherein the IC die comprises a radio frequency (RF) die.

### Claim 9

An antenna in package (AIP), comprising:
a plurality of bond pads electrically coupled to at least one of a top metal layer and a bottom metal layer;
a plurality of metal pillars including a first metal pillar electrically coupled between a first contact pad and a first antenna on the top metal layer and a second metal pillar electrically coupled between a second contact pad and a second antenna on the top metal layer, wherein the first antenna and the second antenna collectively include at least two of a patch antenna, a horn antenna, a bow-tie antenna, and a Vivaldi antenna; and
wherein at least a first of a plurality of filled vias is electrically coupled to the first metal pillar for providing a first transmission line from the first contact pad to the first antenna, and wherein at least a second of the plurality of filled vias is electrically coupled to the second metal pillar for providing a second transmission line from the second contact pad to the second antenna.

### Claim 10

An antenna in package (AIP), comprising:
a plurality of bond pads electrically coupled to at least one of a top metal layer and a bottom metal layer;
a plurality of metal pillars including a first metal pillar electrically coupled between a first contact pad and a first antenna and a second metal pillar electrically coupled between a second contact pad and a second antenna;
wherein at least a first of a plurality of filled vias is electrically coupled to the first metal pillar for providing a first transmission line from the first contact pad to the first antenna, and wherein at least a second of the plurality of filled vias is electrically coupled to the second metal pillar for providing a second transmission line from the second contact pad to the second antenna; and
a package substrate including an IC die mounted with a top side up, wherein the IC die is completely embedded therein, the package substrate further comprising a top layer including a top dielectric layer and the top metal layer including a first antenna of a first antenna type and a second antenna of a second antenna type, and a bottom layer including a bottom dielectric layer and the bottom metal layer including a plurality of contact pads including the first contact pad, the second contact pad, and the plurality of filled vias.

### Claim 11

An antenna in package (AIP), comprising:
an integrated circuit (IC) die comprising a substrate including a top side semiconductor surface including circuitry having a plurality of bond pads electrically connected to nodes in the circuitry;
a package substrate including the IC die mounted with a top side up, wherein the IC die is completely embedded therein, the package substrate comprising a top layer including a top dielectric layer and a top metal layer including a first antenna of a first antenna type and a second antenna of a second antenna type, and a bottom layer including a bottom dielectric layer and a bottom metal layer including a plurality of contact pads including a first contact pad, a second contact pad, and a plurality of filled vias; and
the plurality of bond pads electrically coupled to the top metal layer and the bottom metal layer.

### Claim 12 (depends on 11)

The AIP of claim 11, further including a plurality of metal pillars including a first metal pillar electrically coupled between the first contact pad and the first antenna and a second metal pillar electrically coupled between the second contact pad and the second antenna.

### Claim 13 (depends on 12)

The AIP of claim 12, wherein a first plurality of filled vias is electrically coupled to the first metal pillar for providing a first transmission line from the first contact pad to the first antenna, and wherein a second plurality of filled vias is electrically coupled to the second metal pillar for providing a second transmission line from the second contact pad to the second antenna.

### Claim 14 (depends on 11)

The AIP of claim 11, further including:
a plurality of metal pillars including a first metal pillar electrically coupled between the first contact pad and the first antenna and a second metal pillar electrically coupled between the second contact pad and the second antenna; and
wherein a first plurality of filled vias is electrically coupled to the first metal pillar for providing a first transmission line from the first contact pad to the first antenna, and wherein a second plurality of filled vias is electrically coupled to the second metal pillar for providing a second transmission line from the second contact pad to the second antenna.

### Claim 15 (depends on 11)

The AIP of claim 11, wherein the package substrate further comprises:
a top intermediate layer below the top layer including a top intermediate metal layer and a top intermediate dielectric layer, a bottom intermediate layer below the top intermediate layer including a bottom intermediate metal layer and a bottom intermediate dielectric layer,
wherein the bottom intermediate dielectric layer surrounds a majority of a surface area of the IC die.

### Claim 16 (depends on 11)

The AIP of claim 11, further including ones of a plurality of filled vias including for electrically connecting at least one of the plurality of bond pads to the top intermediate metal layer and then for connecting the top intermediate metal layer to the top metal layer, and other ones of the plurality of filled vias including for electrically connecting the bond pads to the top intermediate metal layer, with the second metal pillar for electrically connecting to at least one of the plurality of contact pads.

### Claim 17 (depends on 11)

The AIP of claim 11, further comprising an application printed circuit board (PCB), wherein the AIP is assembled on a top surface of the PCB.

### Claim 18 (depends on 11)

The AIP of claim 11, wherein the first antenna and the second antenna both comprise a millimeter wave antenna.

### Claim 19 (depends on 11)

The AIP of claim 11, wherein the IC die comprises a radio frequency (RF) die.

### Claim 20 (depends on 11)

The AIP of claim 11, wherein a width and a line spacing for the top metal layer and for the bottom metal layer both include a dimension that is less than or equal to 10 μm.

### Claim 21 (depends on 11)

The AIP of claim 11, wherein the first antenna and the second antenna collectively include at least two of a patch antenna, a horn antenna, a bow-tie antenna, and a Vivaldi antenna.

### Claim 22 (depends on 11)

The AIP of claim 11, wherein a thickness of the AIP is less than or equal to 600 μm.

### Claim 23

An antenna in package (AIP), comprising:
a plurality of metal pillars including a first metal pillar electrically coupled between a first contact pad and a first antenna and a second metal pillar electrically coupled between a second contact pad and a second antenna;
wherein at least a first of a plurality of filled vias is electrically coupled to the first metal pillar for providing a first transmission line from the first contact pad to the first antenna, and wherein at least a second of the plurality of filled vias is electrically coupled to the second metal pillar for providing a second transmission line from the second contact pad to the second antenna;
a top layer including a top dielectric layer and a top metal layer, a top intermediate layer below the top layer including a top intermediate metal layer and a top intermediate dielectric layer, a bottom intermediate layer below the top intermediate layer including a bottom intermediate metal layer and a bottom intermediate dielectric layer; and
wherein the bottom intermediate dielectric layer surrounds a majority of a surface area of an IC die.

### Claim 24 (depends on 23)

The AIP of claim 23, wherein the bottom intermediate dielectric layer surrounds a majority of a second surface area of the first metal pillar and the second metal pillar.

### Claim 25 (depends on 24)

The AIP of claim 24, wherein the bottom intermediate dielectric layer surrounds a majority of a third surface area of the bottom intermediate metal layer.
