# US 12,113,161 B2 · Display device using micro LED and method for manufacturing same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,113,161 B2 - Document ID: US12113161B2 - Status: Granted - Kind: B2 - Application number: 17/638,444 - Filed: 2019-08-30 - Published: 2022-11-03 - Granted: 2024-10-08 - Earliest claimed: 2019-08-28 - Assignees: LG Electronics Inc. - Applicants: LG Electronics Inc. - Inventors: Indo Chung; Jeonghyo Kwon; Dohan Kim - Web page: https://patentgrep.com/patent/US12113161B2 ## CPC - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 20/01: Manufacture or treatment - H10H 20/8312: {extending at least partially through the bodies} - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10H 20/032: {of electrodes} - H10H 20/0364: {of interconnections} - H10W 90/00: Package configurations - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract The present specification provides a new type of a display device in which a wiring process is easily performed after a semiconductor light emitting element having a vertical structure is assembled on a substrate. Here, a semiconductor light emitting device according to an embodiment of the present invention is characterized by comprising: a substrate; a wiring electrode positioned on the substrate; a dielectric film positioned on the wiring electrode; an assembly electrode positioned on the dielectric film; an assembly insulating film positioned on the assembly electrode; a partition wall positioned on the assembly insulting film and defining an assembly groove to which a semiconductor light emitting element is assembled; and the semiconductor light emitting element which is assembled to the assembly groove and provided with conductive electrodes on both ends thereof, wherein the wiring electrode is provided with a protrusion portion, and the protrusion portion protrudes toward the assembly groove and is electrically connected to the conductive electrode on one end of the semiconductor light emitting element. ## Claims ### Claim 1 A display device comprising: a substrate; a wiring electrode located on the substrate; a dielectric film located on the wiring electrode; assembly electrodes located on the dielectric film; an assembly insulating film located on the assembly electrodes; partition walls located on the assembly insulating film so as to define an assembly recess therebetween, wherein the assembly recess is configured to accommodate a semiconductor light emitting element assembled therein; and the semiconductor light emitting element provided with conductivity-type electrodes formed at both ends thereof, wherein the wiring electrode comprises a protrusion which protrudes towards the assembly recess and is electrically connected to one of the conductivity-type electrodes of the semiconductor light emitting element. ### Claim 2 (depends on 1) The display device of claim 1, wherein the wiring electrode comprises a depressed portion formed opposite the protrusion. ### Claim 3 (depends on 2) The display device of claim 2, wherein: the assembly electrodes are provided in a pair and a position of each assembly electrode overlaps with a position of a corresponding partition wall; and a position of the wiring electrode corresponds to a center of the assembly recess. ### Claim 4 (depends on 3) The display device of claim 3, wherein the wiring electrode and the assembly electrodes are elongated and formed parallel to each other. ### Claim 5 (depends on 4) The display device of claim 4, further comprising stepped parts located under the assembly recess, wherein the semiconductor light emitting element is positioned on top of the stepped parts. ### Claim 6 (depends on 5) The display device of claim 5, wherein the stepped parts are formed by etching a portion of the dielectric film and the assembly insulating film exposed between the partition walls. ### Claim 7 (depends on 6) The display device of claim 6, wherein the protrusion of the wiring electrode is formed in a space defined between the stepped parts. ### Claim 8 (depends on 1) The display device of claim 1, wherein a surface of the conductivity-type electrode of the semiconductor light emitting element connected to the protrusion of the wiring electrode is provided with an uneven structure. ### Claim 9 (depends on 1) The display device of claim 1, wherein the semiconductor light emitting element is provided with a magnetic layer. ### Claim 10 (depends on 1) The display device of claim 1, wherein the semiconductor light emitting element is a micro-LED having a size measured in micrometers. ### Claim 11 A method for manufacturing a display device, the method comprising: forming a semiconductor light emitting element provided with a magnetic layer; preparing an assembly substrate comprising a wiring electrode, assembly electrodes, and an assembly recess; placing the semiconductor light emitting element into a chamber filled with a fluid; positioning the assembly substrate at an upper region of the chamber, and causing the semiconductor light emitting element to be assembled within the assembly recess of the assembly substrate using a magnetic field and an electric field; radiating a laser to affect a region of the wiring electrode of the assembly substrate; and electrically connecting the affected region of the wiring electrode to the semiconductor light emitting element. ### Claim 12 (depends on 11) The method of claim 11, wherein preparing the assembly substrate comprises: forming the wiring electrode on the assembly substrate; forming a dielectric film configured to surround the wiring electrode; forming the assembly electrodes on the dielectric film; forming an assembly insulating film configured to surround the assembly electrodes; and forming partition walls on the assembly insulating film so as to define the assembly recess therebetween. ### Claim 13 (depends on 12) The method of claim 12, wherein preparing the assembly substrate further comprises forming stepped parts under the assembly recess by etching a portion of the assembly insulating film and the dielectric film exposed between the partition walls. ### Claim 14 (depends on 13) The method of claim 13, wherein the semiconductor light emitting element is assembled within the assembly recess by being disposed on top of the stepped parts. ### Claim 15 (depends on 11) The method of claim 11, wherein: the assembly substrate is formed of a material configured to transmit the laser; and the laser is radiated through a rear surface of the assembly substrate toward the region of the wiring electrode which corresponds to a position of the assembly recess. ### Claim 16 (depends on 11) The method of claim 11, wherein the semiconductor light emitting element has a vertical semiconductor light emitting structure and is provided with conductivity-type electrodes provided at both ends thereof, wherein an uneven structure is provided on a surface of at least one of the conductivity-type electrodes provided at both ends of the vertical semiconductor light emitting structure.