# US 12,113,148 B2 · Semiconductor nanoparticle, method for manufacturing same, and light emitting device

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- Number: US 12,113,148 B2
- Document ID: US12113148B2
- Status: Granted
- Kind: B2
- Application number: 18/358,534
- Filed: 2023-07-25
- Published: 2024-02-22
- Granted: 2024-10-08
- Earliest claimed: 2019-03-12
- Assignees: National University Corporation Tokai National Higher Education and Research System; Osaka University; Nichia Corporation
- Applicants: National University Corporation Tokai National Higher Education and Research System; Osaka University; Nichia Corporation
- Inventors: Tsukasa Torimoto; Tatsuya Kameyama; Yuki Mori; Hiroki Yamauchi; Susumu Kuwabata; Taro Uematsu; Daisuke Oyamatsu
- Web page: https://patentgrep.com/patent/US12113148B2

## CPC

- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/8512: {Wavelength conversion materials}
- B82Y 15/00: Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
- B82Y 40/00: Manufacture or treatment of nanostructures
- H10H 20/01: Manufacture or treatment
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- H10H 20/036: {of packages}
- H10H 20/0361: {of wavelength conversion means}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

Provided is a method for manufacturing a semiconductor nanoparticle, the method includes performing a heat treatment of a first mixture containing a silver (Ag) salt, an alkali metal salt, a salt containing at least one of indium (In) and gallium (Ga), a sulfur source, and an organic solvent. A ratio of the number of atoms of an alkali metal to the total number of atoms of Ag and the alkali metal in the first mixture is greater than 0 and less than 1.

## Claims

### Claim 1

A semiconductor nanoparticle comprising:
silver (Ag); lithium; at least one of indium (In) and gallium (Ga); and sulfur (S), wherein
a total content of silver (Ag) and lithium is 10 mol % to 30 mol %, a total content of indium (In) and gallium (Ga) is 15 mol % to 35 mol %, and a content of sulfur (S) is 35 mol % to 55 mol %, wherein
the semiconductor nanoparticle irradiated with light having a wavelength in a range of 200 nm or more and less than 500 nm emits light having an emission peak wavelength in a range of 500 nm to 650 nm and a half-value width of 250 meV or less in an emission spectrum.

### Claim 2 (depends on 1)

A core-shell type semiconductor nanoparticle comprising:
a core comprising the semiconductor nanoparticle according to claim 1; and
a shell disposed on a surface of the core and comprising a semiconductor material substantially composed of a group 13 element and a group 16 element, wherein
the core-shell type semiconductor nanoparticle emits light due to irradiation with light.

### Claim 3 (depends on 2)

A light emitting device comprising: a light conversion member comprising the core-shell type semiconductor nanoparticle according to claim 2; and a semiconductor light emitting element.

### Claim 4 (depends on 3)

The light emitting device according to claim 3, wherein the semiconductor light emitting element is an LED chip.

### Claim 5 (depends on 1)

A core-shell type semiconductor nanoparticle comprising:
a core comprising the semiconductor nanoparticle according to claim 1; and
a shell disposed on a surface of the core and comprising a semiconductor material substantially composed of an alkali metal, a group 13 element, and a group 16 element, wherein
the core-shell type semiconductor nanoparticle emits light due to irradiation with light.

### Claim 6 (depends on 5)

A light emitting device comprising: a light conversion member comprising the core-shell type semiconductor nanoparticle according to claim 5; and a semiconductor light emitting element.

### Claim 7 (depends on 6)

The light emitting device according to claim 6, wherein the semiconductor light emitting element is an LED chip.

### Claim 8 (depends on 1)

A light emitting device comprising: a light conversion member comprising the semiconductor nanoparticle according to claim 1; and a semiconductor light emitting element.

### Claim 9 (depends on 8)

The light emitting device according to claim 8, wherein the semiconductor light emitting element is an LED chip.