# US 12,113,136 B2 · Semiconducting materials with surrounding radial p-n diodes

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- Number: US 12,113,136 B2
- Document ID: US12113136B2
- Status: Granted
- Kind: B2
- Application number: 18/049,103
- Filed: 2022-10-24
- Published: 2023-03-02
- Granted: 2024-10-08
- Earliest claimed: 2018-01-09
- Assignees: University of Louisville Research Foundation, Inc.
- Applicants: University of Louisville Research Foundation, Inc.
- Inventors: Cindy Harnett
- Web page: https://patentgrep.com/patent/US12113136B2

## CPC

- H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00)
- D03D 1/0088: {Fabrics having an electronic function}
- D03D 15/47: multicomponent, e.g. blended yarns or threads (multicomponent fibres or filaments D03D15/292)
- H10D 8/045: {of PN junction diodes}
- H10D 62/117: {Shapes of semiconductor bodies}
- H10W 90/00: Package configurations
- D10B 2101/20: Metallic fibres
- D10B 2401/16: antistatic; conductive
- H10H 20/817: characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- D03D: WOVEN FABRICS; METHODS OF WEAVING; LOOMS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- D10B: INDEXING SCHEME ASSOCIATED WITH SUBLASSES OF SECTION D, RELATING TO TEXTILES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A flexible wire comprises a conductive core surrounded by one or more radial p-n diodes and alternating conductive and non-conductive bands along an outermost surface. Methods for producing the wire are also disclosed, as are textiles and other flexible materials comprising or consisting of such flexible wires.

## Claims

### Claim 1

A flexible semiconductor device comprising a conductive core surrounded by one or more radial p-n diodes and alternating conductive and non-conductive bands along an outermost surface of a diode wire, thread, fiber, ribbon, strip, string, yarn, filament, strand, or chord.

### Claim 2 (depends on 1)

The flexible semiconductor device of claim 1, wherein the flexible semiconductor device has a bending radius of 2 mm or less.

### Claim 3 (depends on 2)

The flexible semiconductor device of claim 2, wherein the flexible semiconductor device has a bending radius of 0.05 to 2 mm.

### Claim 4 (depends on 1)

The flexible semiconductor device of claim 1, wherein the core comprises a nonconductive inner material with a conductive coating.

### Claim 5 (depends on 4)

The flexible semiconductor device of claim 4, wherein the conductive coating comprises a silicide.

### Claim 6 (depends on 5)

The flexible semiconductor device of claim 5, wherein the core's inner material consists of quartz.

### Claim 7 (depends on 4)

The flexible semiconductor device of claim 4, wherein the nonconductive inner material has a diameter of 0.4 to 0.6 mm and the conductive coating has a thickness of 50-300 nm.

### Claim 8 (depends on 1)

The flexible semiconductor device of claim 1, wherein the core has a diameter of 0.05 to 1 mm.

### Claim 9 (depends on 8)

The flexible semiconductor device of claim 8, wherein the core's diameter is 0.4 to 0.6 mm.

### Claim 10 (depends on 1)

The flexible semiconductor device of claim 1, configured as a thread suitable for one or more of weaving, knitting, crocheting, knotting, tying, and stitching.

### Claim 11

A flexible circuit comprising a plurality of flexible threads each comprising a conductive core surrounded by one or more radial p-n diodes and alternating conductive and non-conductive bands along an outermost surface of the flexible thread, wherein the plurality of flexible threads are one or more of weaved, knitted, crocheted, knotted, tied, and stitched together to form a flexible circuit.

### Claim 12 (depends on 11)

The flexible circuit of claim 11, wherein at least one flexible thread thereof has a bending radius of 2 mm or less.

### Claim 13 (depends on 12)

The flexible circuit of claim 12, wherein the flexible thread thereof has a bending radius of 0.05 to 2 mm.

### Claim 14 (depends on 11)

The flexible circuit of claim 11, wherein the conductive core of at least one flexible thread thereof comprises a nonconductive inner material with a conductive coating.

### Claim 15 (depends on 14)

The flexible circuit of claim 14, wherein the conductive coating comprises a silicide.

### Claim 16 (depends on 15)

The flexible circuit of claim 15, wherein the core's inner material consists of quartz.

### Claim 17 (depends on 14)

The flexible circuit of claim 14, wherein the nonconductive inner material has a diameter of 0.4 to 0.6 mm and the conductive coating has a thickness of 50-300 nm.

### Claim 18 (depends on 11)

The flexible circuit of claim 11, wherein the core has a diameter of 0.05 to 1 mm.

### Claim 19

A flexible circuit comprising at least one diode wire, thread, fiber, ribbon, strip, string, yarn, filament, strand, or chord comprising a conductive core surrounded by one or more radial p-n diodes and alternating conductive and non-conductive bands along an outermost surface of the at least one diode wire, thread, fiber, ribbon, strip, string, yarn, filament, strand, or chord.

### Claim 20 (depends on 19)

The flexible circuit of claim 19, wherein the flexible circuit comprises a plurality of diode wires, threads, fibers, ribbons, strips, strings, yarns, filaments, strands, or chords that are one or more of weaved, knitted, crocheted, knotted, tied, and stitched together to form the flexible circuit.