# US 12,113,135 B2 · Transistor and method for manufacturing the same

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- Number: US 12,113,135 B2
- Document ID: US12113135B2
- Status: Granted
- Kind: B2
- Application number: 18/174,687
- Filed: 2023-02-27
- Published: 2023-07-13
- Granted: 2024-10-08
- Earliest claimed: 2021-08-31
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Yu-Chu Lin; Wen-Chih Chiang; Chi-Chung Jen; Ming-Hong Su; Mei-Chen Su; Chia-Wei Lee; Kuan-Wei Su; Chia-Ming Pan
- Web page: https://patentgrep.com/patent/US12113135B2

## CPC

- H10B 41/30: characterised by the memory core region
- H10D 30/68: Floating-gate IGFETs
- H10B 41/00: Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10D 30/6891: {characterised by the shapes, relative sizes or dispositions of the floating gate electrode}
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure. The first terminal comprises a tunneling layer formed on the substrate, a first conductive structure formed on the tunneling layer, and a dielectric structure formed on a top surface and on a first curved side surface of the first conductive structure. The semiconductor structure includes a second terminal coupled to the substrate. The second terminal comprises a second conductive structure formed on an isolation structure. The second conductive structure has a second curved side surface, and the dielectric structure is disposed between the first curved side surface and the second curved side surface.

## Claims

### Claim 1

A method, comprising:
forming a first conductive structure, having a first curved side surface, on a substrate;
depositing a dielectric structure on the first conductive structure; and
forming a second conductive structure, having a second curved side surface, on an isolation structure in the substrate,
wherein the dielectric structure is disposed between the first curved side surface and the second curved side surface.

### Claim 2 (depends on 1)

The method of claim 1, wherein the dielectric structure is deposited on a top surface of the first conductive structure.

### Claim 3 (depends on 1)

The method of claim 1, further comprising:
forming a source/drain on the substrate that is laterally displaced from the first conductive structure and the second conductive structure.

### Claim 4 (depends on 1)

The method of claim 1, further comprising:
forming a third conductive structure on the substrate,
wherein forming the third conductive structure comprises:
depositing the third conductive structure in a same deposition process as depositing the first conductive structure.

### Claim 5 (depends on 4)

The method of claim 4, wherein a distance from the third conductive structure to the first conductive structure is in a range of approximately 8 micrometers to 12 micrometers.

### Claim 6 (depends on 1)

The method of claim 1, further comprising:
forming a lightly doped drain within the substrate between a source/drain and the first conductive structure,
wherein the first conductive structure is formed after the lightly doped drain is formed.

### Claim 7

A method, comprising:
depositing a tunneling layer on a substrate of a semiconductor structure;
forming a first conductive structure, having a first curved side surface, on the tunneling layer;
depositing a dielectric structure on a top surface and on the first curved side surface of the first conductive structure; and
forming a second conductive structure on an isolation structure in the substrate, the second conductive structure having a second curved side surface,
wherein the dielectric structure is disposed between the first curved side surface and the second curved side surface.

### Claim 8 (depends on 7)

The method of claim 7, wherein the dielectric structure is deposited on a top surface of the first conductive structure.

### Claim 9 (depends on 7)

The method of claim 7, further comprising:
forming a source/drain on the substrate that is laterally displaced from the first conductive structure and the second conductive structure.

### Claim 10 (depends on 7)

The method of claim 7, further comprising:
forming a third conductive structure on the substrate.

### Claim 11 (depends on 10)

The method of claim 10, wherein a distance from the third conductive structure to the first conductive structure is in a range of approximately 8 micrometers to 12 micrometers.

### Claim 12 (depends on 7)

The method of claim 7, further comprising:
forming, before depositing the tunneling layer on the substrate, a lightly doped drain within the substrate between a source/drain and the first conductive structure.

### Claim 13 (depends on 7)

The method of claim 7, further comprising:
forming, before depositing the second conductive structure, the isolation structure based on doping a portion of the substrate to increase an impedance of the portion of the substrate.

### Claim 14

A method, comprising:
forming a first conductive structure, having a first curved side surface, on a substrate;
depositing a dielectric structure on the first curved side surface of the first conductive structure; and
forming a second conductive structure, having a second curved side surface, on an isolation structure in the substrate,
wherein the dielectric structure is disposed between the first curved side surface and the second curved side surface.

### Claim 15 (depends on 14)

The method of claim 14, wherein the dielectric structure is deposited on a top surface of the first conductive structure.

### Claim 16 (depends on 14)

The method of claim 14, further comprising:
forming a source/drain on the substrate that is laterally displaced from the first conductive structure and the second conductive structure.

### Claim 17 (depends on 14)

The method of claim 14, further comprising:
forming a third conductive structure on the substrate.

### Claim 18 (depends on 17)

The method of claim 17, wherein a distance from the third conductive structure to the first conductive structure is in a range of approximately 8 micrometers to 12 micrometers.

### Claim 19 (depends on 14)

The method of claim 14, further comprising:
forming, a lightly doped drain within the substrate between a source/drain and the first conductive structure,
wherein the first conductive structure is formed after the lightly doped drain is formed.

### Claim 20 (depends on 14)

The method of claim 14, further comprising:
forming, before depositing the second conductive structure, the isolation structure based on doping a portion of the substrate to increase an impedance of the portion of the substrate.