# US 12,113,126 B2 · Semiconductor device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,113,126 B2
- Document ID: US12113126B2
- Status: Granted
- Kind: B2
- Application number: 17/686,809
- Filed: 2022-03-04
- Published: 2023-03-23
- Granted: 2024-10-08
- Earliest claimed: 2021-09-22
- Assignees: Kabushiki Kaisha Toshiba; Toshiba Electronic Devices & Storage Corporation
- Applicants: Kabushiki Kaisha Toshiba; Toshiba Electronic Devices & Storage Corporation
- Inventors: Kaori Fuse; Keiko Kawamura; Takako Motai; Tomoko Matsudai; Yoko Iwakaji
- Web page: https://patentgrep.com/patent/US12113126B2

## CPC

- H10D 8/422: {PN diodes having the PN junctions in mesas}
- H10D 12/481: {having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs}
- H10D 8/50: PIN diodes
- H10D 62/10: Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 62/128: {Anode regions of diodes}
- H10D 62/126: {Top-view geometrical layouts of the regions or the junctions}
- H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device includes: a first electrode; a first semiconductor layer of first conductivity type provided on the first electrode; a second semiconductor layer of second conductivity type provided on the first semiconductor layer; a second electrode provided on the second semiconductor layer; a first trench reaching the first semiconductor layer from the second semiconductor layer; a first semiconductor region provided in the second semiconductor layer, the first semiconductor region being in contact with the first trench and the first semiconductor region having a higher concentration of impurities of second conductivity type than the second semiconductor layer; and a first insulating film provided in the second semiconductor layer and the first insulating film being in contact with the first semiconductor region.

## Claims

### Claim 1

A semiconductor device, comprising:
a first electrode;
a first semiconductor layer of first conductivity type provided on the first electrode;
a second semiconductor layer of second conductivity type provided on the first semiconductor layer;
a second electrode provided on the second semiconductor layer;
a first trench reaching the first semiconductor layer from the second semiconductor layer;
a first semiconductor region provided in the second semiconductor layer, the first semiconductor region being in contact with the first trench and the first semiconductor region having a higher concentration of impurities of second conductivity type than the second semiconductor layer; and
a first insulating film provided in the second semiconductor layer and the first insulating film being in contact with the first semiconductor region.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1,
wherein a length of the first insulating film in a first direction from the first semiconductor layer to the second semiconductor layer is 0.6 times or more and 1.5 times or less a length of the first semiconductor region in the first direction.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1,
wherein a length of the second semiconductor layer in a first direction from the first semiconductor layer to the second semiconductor layer is longer than a length of the first insulating film in the first direction.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1,
wherein a length of the second semiconductor layer in a first direction from the first semiconductor layer to the second semiconductor layer is longer than a length of the first semiconductor region in the first direction.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1,
wherein the first insulating film contains silicon oxide.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a plurality of the first semiconductor regions provided in the second semiconductor layer and the first semiconductor regions being separated from each other.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a plurality of the first semiconductor regions provided in the second semiconductor layer and the first semiconductor regions being separated from each other; and
a plurality of the first insulating films provided in the second semiconductor layer and the first insulating films being separated from each other.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a second trench extending from the second semiconductor layer toward the first semiconductor layer, the second trench being in contact with the second semiconductor layer in a second direction crossing a first direction from the first semiconductor layer to the second semiconductor layer;
a second semiconductor region provided in the second semiconductor layer, the second semiconductor region being in contact with the second trench and the second semiconductor region having a higher concentration of impurities of second conductivity type than the second semiconductor layer; and
a second insulating film provided in the second semiconductor layer and the second insulating film being in contact with the second semiconductor region.

### Claim 9 (depends on 8)

The semiconductor device according to claim 8,
wherein the first trench and the second trench extend in a third direction crossing the first and second directions, and
a length of the second semiconductor region in the third direction is shorter than a length of the first semiconductor region in the third direction.

### Claim 10 (depends on 9)

The semiconductor device according to claim 9,
wherein the length of the second semiconductor region in the third direction is shorter than a length of the second insulating film in the third direction.

### Claim 11 (depends on 9)

The semiconductor device according to claim 9, further comprising:
a plurality of the second semiconductor regions provided in the second semiconductor layer and the second semiconductor regions being separated from each other.

### Claim 12 (depends on 9)

The semiconductor device according to claim 9, further comprising:
a plurality of the second semiconductor regions provided in the second semiconductor layer and the second semiconductor regions being separated from each other; and
a plurality of the second insulating films provided in the second semiconductor layer and the second insulating films being separated from each other.

### Claim 13 (depends on 8)

The semiconductor device according to claim 8,
wherein the second trench reaches the first semiconductor layer.

### Claim 14 (depends on 8)

The semiconductor device according to claim 8,
wherein a bottom of the second trench is provided in the second semiconductor layer.

### Claim 15 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a second trench extending from the second semiconductor layer toward the first semiconductor layer, the second trench being in contact with the second semiconductor layer in a second direction crossing a first direction from the first semiconductor layer to the second semiconductor layer,
wherein at least a part of the second trench has a portion in the second semiconductor layer, the portion not being in contact with a second semiconductor region having a higher concentration of impurities of second conductivity type than the second semiconductor layer.

### Claim 16 (depends on 11)

The semiconductor device according to claim 11,
wherein the second trench has a portion in contact with the second semiconductor region.