# US 12,113,117 B2 · Piezo-resistive transistor based resonator with ferroelectric gate dielectric

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- Number: US 12,113,117 B2
- Document ID: US12113117B2
- Status: Granted
- Kind: B2
- Application number: 18/130,326
- Filed: 2023-04-03
- Published: 2023-07-27
- Granted: 2024-10-08
- Earliest claimed: 2019-01-02
- Assignees: Intel Corporation
- Applicants: Intel Corporation
- Inventors: Tanay Gosavi; Chia-ching Lin; Raseong Kim; Ashish Verma Penumatcha; Uygar Avci; Ian Young
- Web page: https://patentgrep.com/patent/US12113117B2

## CPC

- H10D 64/689: {having ferroelectric layers}
- H03H 9/02259: {Driving or detection means}
- H03H 9/17: having a single resonator (crystal tuning forks H03H9/21)
- H03H 9/2447: {Beam resonators (H03H9/2468 takes precedence)}
- H10D 30/6211: {having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates}
- H10D 30/701: {IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs}
- H10D 48/50: Devices controlled by mechanical forces, e.g. pressure
- H10D 64/512: {Disposition of the gate electrodes, e.g. buried gates}
- H10D 84/834: {comprising FinFETs}
- H03H 2009/02314: {forming part of a transistor structure}
- H03H 2009/02488: {Vibration modes}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)

## Abstract

Describe is a resonator that uses ferroelectric (FE) materials in the gate of a transistor as a dielectric. The use of FE increases the strain/stress generated in the gate of the FinFET. Along with the usual capacitive drive, which is boosted with the increased polarization, FE material expands or contacts depending on the applied electric field on the gate of the transistor. As such, acoustic waves are generated by switching polarization of the FE materials. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using the metal line above and vias' to body and dummy fins on the side. As such, a Bragg reflector is formed above the FE based transistor.

## Claims

### Claim 1

A resonator, comprising:
a plurality of gates, wherein first every other alternate gates of the plurality of gates are biased by opposite voltages, and wherein second every other alternate gates of the plurality of gates are coupled to sense circuitry, wherein the first every other alternate gates of the plurality of gates comprise a ferroelectric gate dielectric, and wherein the second every other alternate gates of the plurality of gates comprise a non-ferroelectric gate dielectric; and
a metal layer over the plurality of gates, wherein the metal layer is unbiased such that it provides a resonant cavity between the plurality of gates and the metal layer.

### Claim 2 (depends on 1)

The resonator of claim 1, wherein the ferroelectric gate dielectric comprises oxygen and hafnium.

### Claim 3 (depends on 2)

The resonator of claim 2, wherein the ferroelectric gate dielectric is doped with a dopant comprising one of silicon, zirconium, lanthanum, or aluminum.

### Claim 4 (depends on 3)

The resonator of claim 3, wherein the dopant has a concentration between about 3% and 30% by weight.

### Claim 5 (depends on 1)

The resonator of claim 1, wherein the non-ferroelectric gate dielectric comprises Si or N.

### Claim 6 (depends on 1)

The resonator of claim 1, wherein the plurality of gates are non-planar gates.

### Claim 7 (depends on 1)

The resonator of claim 1, wherein the plurality of gates are planar gates.

### Claim 8

A resonator, comprising:
a plurality of gates each corresponding to a separate fin, wherein first every other alternate gates of the plurality of gates comprise a ferroelectric gate dielectric and are biased by opposite voltages, and wherein second every other alternate gates of the plurality of gates are coupled to sense circuitry; and
a metal layer over the plurality of gates, wherein the metal layer is unbiased such that it provides a resonant cavity between the plurality of gates and the metal layer.

### Claim 9 (depends on 8)

The resonator of claim 8, wherein the ferroelectric gate dielectric comprises oxygen and hafnium.

### Claim 10 (depends on 9)

The resonator of claim 9, wherein the ferroelectric gate dielectric is doped with a dopant comprising one of silicon, zirconium, lanthanum, or aluminum.

### Claim 11 (depends on 10)

The resonator of claim 10, wherein the dopant has a concentration between about 3% and 30% by weight.

### Claim 12 (depends on 8)

The resonator of claim 8, wherein the second every other alternate gate of the plurality of gates comprise a non-ferroelectric gate dielectric.

### Claim 13 (depends on 12)

The resonator of claim 12, wherein the non-ferroelectric gate dielectric comprises Si or N.

### Claim 14

A system, comprising:
a memory; and
a processor coupled to the memory, wherein the processor comprises a resonator comprising:
a plurality of gates, wherein first every other alternate gates of the plurality of gates are biased by opposite voltages, and wherein second every other alternate gates of the plurality of gates are coupled to a sense circuitry, wherein the first every other alternate gates of the plurality of gates comprise a ferroelectric gate dielectric, and wherein the second every other alternate gates of the plurality of gates comprise a non-ferroelectric gate dielectric; and
a metal layer over the plurality of gates, wherein the metal layer is unbiased such that it provides a resonant cavity between the plurality of gates and the metal layer; and
a communication interface to allow the processor to communicate with another device.

### Claim 15 (depends on 14)

The system of claim 14, wherein the ferroelectric gate dielectric comprises oxygen and hafnium.

### Claim 16 (depends on 15)

The system of claim 15, wherein the ferroelectric gate dielectric is doped with a dopant comprising one of silicon, zirconium, lanthanum, or aluminum.

### Claim 17 (depends on 16)

The system of claim 16, wherein the dopant has a concentration between about 3% and 30% by weight.

### Claim 18 (depends on 14)

The system of claim 14, wherein the non-ferroelectric gate dielectric comprises Si and N.

### Claim 19 (depends on 14)

The system of claim 14, wherein the plurality of gates are non-planar gates.

### Claim 20 (depends on 14)

The system of claim 14, wherein the plurality of gates are planar gates.