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US 12,113,114 B2Granted
Transistor with ohmic contacts
AssigneeWolfspeed, Inc.
InventorsKyle Bothe, Evan Jones
Life of this patent
Estimating the term…
Abstract
A transistor includes a semiconductor layer and a channel region. The transistor further includes a first doped contact region in the semiconductor layer and adjacent the channel region. The transistor further includes a first ohmic contact including an interface region comprising a first interface length between the first ohmic contact and the first doped contact region larger than a length of the interface region.
Claims26
A transistor, comprising:
- a semiconductor layer;
- a channel region;
- a first doped contact region in the semiconductor layer and adjacent the channel region;
- and
- a first ohmic contact comprising a first interface region having a first interface region length extending along a length of the channel region, the first interface region comprising a first interface length extending along the length of the channel region between the first ohmic contact and the first doped contact region larger than the first interface region length of the first interface region.
2 more elements
A high electron mobility transistor, HEMT, with ohmic source and drain contacts, comprising:
- a semiconductor layer;
- a channel region;
- a first doped contact region in the semiconductor layer and adjacent the channel region;
- a second doped contact region in the semiconductor layer and adjacent the channel region;
- a first ohmic contact comprising a first interface region having a first interface region length extending along a length of the channel region, the first interface region comprising a first interface length extending along the length of the channel region between the first ohmic contact and the first doped contact region larger than the first interface region length of the first interface region;
- and
- a second ohmic contact comprising a second interface region having a second interface region length extending along the length of the channel region, the second interface region comprising a second interface length extending along the length of the channel region between the second ohmic contact and the second doped contact region larger than the second interface region length of the second interface region.
4 more elements
Dependencies are inferred from the claim text.