# US 12,113,098 B2 · Manufacturing method of capacitor structure including patterned conductive layer disposed between two electrodes

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- Number: US 12,113,098 B2
- Document ID: US12113098B2
- Status: Granted
- Kind: B2
- Application number: 18/123,972
- Filed: 2023-03-20
- Published: 2023-07-20
- Granted: 2024-10-08
- Earliest claimed: 2021-05-31
- Assignees: United Microelectronics Corp.
- Applicants: United Microelectronics Corp.
- Inventors: Chih-Tung Yeh; Kuang-Pi Lee; Wen-Jung Liao
- Web page: https://patentgrep.com/patent/US12113098B2

## CPC

- H10D 1/692: {Electrodes}
- H10D 84/01: Manufacture or treatment
- H10D 84/05: using Group III-V technology
- H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors}
- H10D 84/813: {Combinations of field-effect devices and capacitor only}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A capacitor structure includes an insulation layer and a capacitor unit disposed on the insulation layer. The capacitor unit includes a first electrode, a second electrode, a first dielectric layer, and a patterned conductive layer. The second electrode is disposed above the first electrode in a vertical direction. The first dielectric layer is disposed between the first electrode and the second electrode in the vertical direction. The patterned conductive layer is disposed between first electrode and the second electrode, the patterned conductive layer is electrically connected with the first electrode, and the first dielectric layer surrounds the patterned conductive layer in a horizontal direction.

## Claims

### Claim 1

A manufacturing method of a capacitor structure, comprising:
forming a capacitor unit on an insulation layer, wherein the capacitor unit comprises:
a first electrode;
a second electrode disposed above the first electrode in a vertical direction;
a dielectric layer disposed between the first electrode and the second electrode in the vertical direction; and
a first patterned conductive layer disposed between the first electrode and the second electrode, wherein the first patterned conductive layer is electrically connected with the first electrode, and the dielectric layer surrounds the first patterned conductive layer in a horizontal direction, wherein the step of forming the capacitor unit comprises:
forming a stacked structure on the insulation layer, wherein the stacked structure comprises the first electrode, a second patterned conductive layer, and the second electrode;
removing a part of the second patterned conductive layer by an etching process for forming a gap between the first electrode and the second electrode, wherein the second patterned conductive layer is etched to be a third patterned conductive layer by the etching process;
forming the dielectric layer in the gap; and
forming an opening after the step of forming the dielectric layer, wherein the opening penetrates through the second electrode in the vertical direction, a part of the third patterned conductive layer is removed by the step of forming the opening for separating the third patterned conductive layer from the second electrode, and the third patterned conductive layer becomes the first patterned conductive layer by the step of forming the opening, wherein the third patterned conductive layer is directly connected with the second electrode before the step of forming the opening.

### Claim 2 (depends on 1)

The manufacturing method of the capacitor structure according to claim 1, wherein the step of forming the stacked structure comprises:
forming a first conductive layer on the insulation layer;
forming a second conductive layer on the first conductive layer;
forming a third conductive layer on the second conductive layer; and
performing a patterning process to the third conductive layer, the second conductive layer, and the first conductive layer, wherein the third conductive layer is patterned to be the second electrode by the patterning process, the second conductive layer is patterned to be the second patterned conductive layer by the patterning process, and the first conductive layer is patterned to be the first electrode by the patterning process.

### Claim 3 (depends on 2)

The manufacturing method of the capacitor structure according to claim 2, wherein the etching process comprises removing the part of the second patterned conductive layer by water reacting with a chloride residue on the stacked structure.

### Claim 4 (depends on 3)

The manufacturing method of the capacitor structure according to claim 3, wherein the chloride residue is generated by the patterning process, and gas used in the patterning process comprises chlorine-containing gas.

### Claim 5 (depends on 3)

The manufacturing method of the capacitor structure according to claim 3, further comprising:
performing a treatment after the patterning process and before the etching process, wherein the chloride residue is generated by the treatment.

### Claim 6 (depends on 1)

The manufacturing method of the capacitor structure according to claim 1, wherein the step of forming the dielectric layer comprises:
forming a dielectric material on the insulation layer, wherein a part of the dielectric material is formed in the gap, another part of the dielectric material is formed on the stacked structure, and the dielectric layer comprises the dielectric material formed in the gap.

### Claim 7 (depends on 6)

The manufacturing method of the capacitor structure according to claim 6, wherein
the opening further penetrates through the dielectric material on the stacked structure in the vertical direction.

### Claim 8 (depends on 1)

The manufacturing method of the capacitor structure according to claim 1, wherein the first patterned conductive layer comprises aluminum.