# US 12,113,092 B2 · Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,113,092 B2 - Document ID: US12113092B2 - Status: Granted - Kind: B2 - Application number: 18/313,638 - Filed: 2023-05-08 - Published: 2023-08-31 - Granted: 2024-10-08 - Earliest claimed: 2011-08-31 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Vladimir Odnoblyudov; Martin F. Schubert - Web page: https://patentgrep.com/patent/US12113092B2 ## CPC - H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) - H10H 20/0137: {the light-emitting regions comprising nitride materials} - H10H 20/018: {Bonding of wafers} - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/835: {Reflective materials} - H10W 42/60: protecting against electrostatic charges or discharges, e.g. Faraday shields (integrated devices comprising arrangements for electrical protection H10D89/60) - H10H 20/032: {of electrodes} - H10W 90/00: Package configurations - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate. ## Claims ### Claim 1 A solid state transducer device, comprising: a solid state emitter (SSE) including a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers; and a plurality of electrostatic discharge (ESD) junctions arranged in parallel and/or series between a first shared contact and a second shared contact, the first and second shared contacts being the only externally accessible active electrical contacts for both the SSE and the plurality of ESD junctions. ### Claim 2 (depends on 1) The solid state transducer device of claim 1, further comprising a via extending through at least the active layer of the SSE, wherein the via comprises a conductive material surrounded by an insulating material that electrically isolates the conductive material from the active layer, wherein the first shared contact includes the conductive material. ### Claim 3 (depends on 2) The solid state transducer device of claim 2, wherein the via extends through a layer positioned between the plurality of ESD junctions and the SSE to electrically isolate the plurality of ESD junctions from the SSE. ### Claim 4 (depends on 2) The solid state transducer device of claim 2, wherein the via electrically connects an epitaxial layer of the plurality of ESD junctions to a conductive reflective material coupled to the SSE. ### Claim 5 (depends on 4) The solid state transducer device of claim 4, wherein the via extends through the first and second semiconductor layers of the SSE and the epitaxial layer of the plurality of ESD junctions. ### Claim 6 (depends on 1) The solid state transducer device of claim 1, further comprising: a buffer layer positioned between the plurality of ESD junctions and the SSE, wherein the buffer layer includes a large-bandgap semiconductor material. ### Claim 7 (depends on 1) The solid state transducer device of claim 1, wherein the second semiconductor layer of the SSE is electrically coupled to an ESD junction of the plurality of ESD junctions. ### Claim 8 (depends on 1) The solid state transducer device of claim 1, further comprising a reflective layer positioned between the SSE and the plurality of ESD junctions. ### Claim 9 (depends on 8) The solid state transducer device of claim 8, further comprising: an insulating layer positioned between the plurality of ESD junctions and the reflective layer. ### Claim 10 (depends on 1) The solid state transducer device of claim 1, further comprising: a support substrate coupled to the plurality of ESD junctions at the second shared contact, the support substrate configured to provide a path for electrical current flow during an ESD event. ### Claim 11 (depends on 1) The solid state transducer device of claim 1, wherein the plurality of ESD junctions are coupled with the SSE in parallel. ### Claim 12 (depends on 1) The solid state transducer device of claim 1, wherein the first shared contact is configured to couple with a power source that is further coupled to a controller configured to direct the power source. ### Claim 13 A solid state transducer device, comprising: a solid state emitter (SSE) formed on an epitaxial substrate; a plurality of electrostatic discharge (ESD) junctions arranged in parallel and/or series between a first shared contact and a second shared contact, the plurality of ESD junctions carried by the SSE, wherein: the plurality of ESD junctions include a portion of the epitaxial substrate; and the first and second shared contacts are the only externally accessible active electrical contacts for both the SSE and the plurality of ESD junctions. ### Claim 14 (depends on 13) The solid state transducer device of claim 13, further comprising: a buffer layer positioned between the portion of the epitaxial substrate and the SSE. ### Claim 15 (depends on 13) The solid state transducer device of claim 13, further comprising a via extending through the SSE and connecting to a conducting material coupled with a first surface of the SSE, wherein the first surface is opposite to a second surface of the SSE connected to the second shared contact. ### Claim 16 (depends on 13) The solid state transducer device of claim 13, wherein the plurality of ESD junctions comprise a p-n junction formed in the portion of the epitaxial substrate. ### Claim 17 A solid state transducer device, comprising: a solid state emitter (SSE) including a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers; a reflective material coupled to the first semiconductor layer; and a plurality of electrostatic discharge (ESD) junctions arranged in parallel and/or series between a first shared contact and a second shared contact, the plurality of ESD junctions on an opposite side of the reflective material from the SSE, wherein the first and second shared contacts are the only externally accessible active electrical contacts for both the SSE and the plurality of ESD junctions. ### Claim 18 (depends on 17) The solid state transducer device of claim 17, further comprising: a support substrate coupled to the plurality of ESD junctions at the second shared contact, the support substrate configured to provide a path for electrical current flow during an ESD event. ### Claim 19 (depends on 17) The solid state transducer device of claim 17, further comprising a via extending through the first semiconductor layer and the active layer of the SSE, and coupling the second semiconductor layer of the SSE with an ESD junction of the plurality of ESD junctions at the first shared contact. ### Claim 20 (depends on 17) The solid state transducer device of claim 17, wherein the plurality of ESD junctions each have a first conductive material, a second conductive material, and an intermediate material separating the first and second conductive materials.