# US 12,113,091 B2 · Full color light emitting diode structure and method for manufacturing the same

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- Number: US 12,113,091 B2
- Document ID: US12113091B2
- Status: Granted
- Kind: B2
- Application number: 17/244,147
- Filed: 2021-04-29
- Published: 2021-11-11
- Granted: 2024-10-08
- Earliest claimed: 2020-05-05
- Assignees: Raysolve Optoelectronics (Suzhou) Company Limited
- Applicants: Raysolve Optoelectronics (Suzhou) Company Limited
- Inventors: Wing Cheung Chong
- Web page: https://patentgrep.com/patent/US12113091B2

## CPC

- H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30)
- H10W 90/00: Package configurations
- H10H 20/018: {Bonding of wafers}
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/8314: {extending at least partially onto an outer side surface of the bodies}
- H10H 20/835: {Reflective materials}
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/851: Wavelength conversion means
- H10H 29/962: {Stacked configurations of light-emitting semiconductor components or devices, the components or devices emitting at different wavelengths}
- H10H 20/032: {of electrodes}
- H10H 20/034: {of coatings}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A LED structure includes a substrate, a first semiconductor layer, a second semiconductor layer, and a color conversion layer. The first semiconductor layer is formed on the substrate, and the first semiconductor layer includes a first LED unit and a second LED unit formed therein. The first LED unit and the second LED unit emit light of a first color. The second semiconductor layer is formed above the first semiconductor layer, and the second semiconductor layer includes a third LED unit formed therein. The third LED unit emits light of a second color different from the first color. The color conversion layer is formed on the first LED unit to convert light of the first color to light of a third color different from the first color and the second color.

## Claims

### Claim 1

A light emitting diode (LED) structure, comprising:
a substrate;
a first semiconductor layer formed on the substrate, the first semiconductor layer comprising a first LED unit and a second LED unit formed therein, wherein the first LED unit and the second LED unit emit light of a first color;
a second semiconductor layer formed above the first semiconductor layer, the second semiconductor layer comprising a third LED unit formed therein, wherein the third LED unit emits light of a second color different from the first color,
wherein each of the first LED unit, the second LED unit, and the third LED unit comprises:
a first doping semiconductor layer;
a multiple quantum well (MQW) layer formed on the first doping semiconductor layer; and
a second doping semiconductor layer formed on the MQW layer,
wherein an ion-implanted material is formed in the second doping semiconductor layer, the ion-implanted material of the first LED unit extends to the ion-implanted material of the second LED unit, and each of the first LED unit, the second LED unit, and the third LED unit comprises a light emitting area surrounded by the ion-implanted material in the second doping semiconductor layer;
a passivation layer covering the ion-implanted material and exposing the light emitting area of the first LED unit, the second LED unit, and the third LED unit;
an electrode layer formed on the passivation layer; and
a color conversion layer formed on the first LED unit to convert light of the first color to light of a third color different from the first color and the second color,
wherein the first LED unit, the second LED unit, and the third LED unit are non-overlapping in a top view of the LED structure.

### Claim 2 (depends on 1)

The LED structure of claim 1, wherein the first semiconductor layer comprises an isolation material formed between the first LED unit and the second LED unit.

### Claim 3 (depends on 2)

The LED structure of claim 2, wherein the third LED unit is formed above the isolation material and is electrically isolated from the first LED unit and the second LED unit.

### Claim 4 (depends on 1)

The LED structure of claim 1, wherein the light of the first color is blue light, and the light of the second color is green light.

### Claim 5 (depends on 4)

The LED structure of claim 4, wherein the light of the third color is red light.

### Claim 6

A light emitting diode (LED) structure, comprising:
a substrate; and
a plurality of LED units formed on the substrate, each LED unit comprising:
a first doping semiconductor layer;
a multiple quantum well (MQW) layer formed on the first doping semiconductor layer; and
a second doping semiconductor layer formed on the MQW layer,
wherein the plurality of LED units comprise a first LED unit and a second LED unit formed on the substrate and horizontally adjacent to each other,
wherein the second doping semiconductor layer of the first LED unit is electrically isolated with the second doping semiconductor layer of the second LED unit by an ion-implanted material formed in the second doping semiconductor layer, and the ion-implanted material of the first LED unit extends to the ion-implanted material of the second LED unit,
wherein the plurality of LED units further comprises a third LED unit formed above the ion-implanted material,
wherein a passivation layer covers the ion-implanted material and exposes the second doping semiconductor layer of the plurality of LED units,
wherein an electrode layer is formed on the passivation layer, and
wherein the first LED unit, the second LED unit, and the third LED unit are non-overlapping in a top view of the LED structure.

### Claim 7 (depends on 6)

The LED structure of claim 6, wherein the electrode layer is in contact with a portion of the second doping semiconductor layer through a first opening on the passivation layer, and in contact with a contact of a driving circuit formed in the substrate through a second opening.

### Claim 8 (depends on 7)

The LED structure of claim 7, wherein a second opening of the third LED unit is formed through the first doping semiconductor layer of the third LED unit, the MQW layer of the third LED unit, the second doping semiconductor layer of the third LED unit, and the ion-implanted material between the first LED unit and the second LED unit.

### Claim 9 (depends on 7)

The LED structure of claim 7, wherein the first LED unit, the second LED unit and the third LED unit are separately connected to different contacts of the driving circuit through the electrode layer.

### Claim 10 (depends on 6)

The LED structure of claim 6, wherein top surfaces of the second doping semiconductor layer of the first LED unit, the second doping semiconductor layer of the second LED unit, and the ion-implanted material are substantially coplanar.

### Claim 11 (depends on 6)

The LED structure of claim 6, wherein the first LED unit and the second LED unit emit light of a first color, and the third LED unit emits light of a second color different from the first color.

### Claim 12 (depends on 11)

The LED structure of claim 11, further comprising:
a color conversion layer formed on the first LED unit to convert the light of the first color to light of a third color different from the first color and the second color.

### Claim 13 (depends on 12)

The LED structure of claim 12, wherein the light of the first color is blue light, the light of the second color is green light, and the light of the third color is red light.