# US 12,113,089 B2 · Light receiving element and distance measuring device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,113,089 B2
- Document ID: US12113089B2
- Status: Granted
- Kind: B2
- Application number: 17/773,154
- Filed: 2020-04-06
- Published: 2022-12-15
- Granted: 2024-10-08
- Earliest claimed: 2019-11-06
- Assignees: Sony Semiconductor Solutions Corporation
- Applicants: Sony Semiconductor Solutions Corporation
- Inventors: Daisuke Washio; Masahiko Tsujita; Hidenori Maeda
- Web page: https://patentgrep.com/patent/US12113089B2

## CPC

- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/811: {Interconnections}
- G01S 7/4816: {of receivers alone}
- G01S 17/08: for measuring distance only (indirect measurement G01S17/46; active triangulation systems G01S17/48)
- H10F 39/024: {of coatings or optical elements}
- H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements}
- H10F 39/8057: {Optical shielding}
- H10F 39/8063: {Microlenses}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G01S: RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES

## Abstract

To prevent leakage of incident light from pixels around a pixel region (11) of a light receiving element. A light receiving element includes a pixel region and an adjacent pixel (400). In the pixel region, a plurality of pixels (100) is arranged, the plurality of pixels including a photodiode formed in a semiconductor substrate (110) in which a charge generated by photoelectric conversion of incident light is multiplied with a high reverse bias voltage, an on-chip lens (160) that focuses the incident light on the photodiode, and a wiring region (120) having a wiring layer (122) connected to the photodiode and an insulating layer (121) that insulates the wiring layer. The adjacent pixel is arranged adjacent to the pixel region and includes the photodiode, an on-chip lens (161) having a curvature different from a curvature of the on-chip lens, and the wiring region.

## Claims

### Claim 1

A light receiving element, comprising:
a pixel region in which a plurality of pixels is arranged, the plurality of pixels including a photodiode formed on a semiconductor substrate in which a charge generated by photoelectric conversion of incident light is multiplied with a high reverse bias voltage, an on-chip lens that focuses the incident light on the photodiode, and a wiring region having a wiring layer connected to the photodiode and an insulating layer that insulates the wiring layer; and
an adjacent pixel arranged adjacent to the pixel region and including a photodiode, and a semiconductor region light-blocking wall formed on the semiconductor substrate at a boundary between the pixel region and the adjacent pixel and blocking the incident light.

### Claim 2 (depends on 1)

The light receiving element according to claim 1, wherein in the adjacent pixel, the semiconductor region light-blocking wall is not formed on a boundary different from a boundary with the pixel region.

### Claim 3 (depends on 1)

The light receiving element according to claim 1, wherein the semiconductor region light-blocking wall is formed by arranging a material that blocks the incident light in a groove formed in the semiconductor substrate.

### Claim 4

A light receiving element, comprising:
a pixel region in which a plurality of pixels is arranged, the plurality of pixels including a photodiode formed on a semiconductor substrate in which a charge generated by photoelectric conversion of incident light is multiplied with a high reverse bias voltage, an on-chip lens that focuses the incident light on the photodiode, and a wiring region having a wiring layer connected to the photodiode and an insulating layer that insulates the wiring layer; and
an adjacent pixel arranged adjacent to the pixel region and including a photodiode, and a wiring region light-blocking wall arranged in the wiring region at a boundary between the pixel region and the pixels-adjacent pixel and blocking the incident light.

### Claim 5 (depends on 4)

The light receiving element according to claim 4, wherein the wiring region light-blocking wall includes the wiring layer arranged at a boundary with an adjacent pixel of the pixels, and a wall-shaped wall portion arranged adjacently between the wiring layer and the semiconductor substrate.

### Claim 6 (depends on 4)

The light receiving element according to claim 4, wherein the wiring region light-blocking wall includes a plurality of the wiring layers arranged in multiple layers at a boundary with an adjacent pixel of the pixels, and a wall-shaped interlayer wall portion arranged between layers of the plurality of the wiring layers.