# US 12,113,080 B2 · Solid-state imaging device

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- Number: US 12,113,080 B2
- Document ID: US12113080B2
- Status: Granted
- Kind: B2
- Application number: 17/285,201
- Filed: 2019-09-11
- Published: 2021-10-21
- Granted: 2024-10-08
- Earliest claimed: 2018-10-31
- Assignees: Hamamatsu Photonics K.K.
- Applicants: Hamamatsu Photonics K.K.
- Inventors: Ryo Takiguchi; Makoto Kono; Keiichi Ota; Tetsuya Taka
- Web page: https://patentgrep.com/patent/US12113080B2

## CPC

- H10F 39/805: {Coatings}
- H10F 39/8057: {Optical shielding}
- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/184: {Infrared image sensors}
- H10F 39/186: {having arrangements for blooming suppression}
- H10F 39/8037: {the integrated elements comprising a transistor}
- H10F 39/807: {Pixel isolation structures}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A solid-state imaging device according to the disclosure includes a semiconductor substrate which has a main surface having a plurality of photosensitive regions, and an insulating film which is provided on the main surface of the semiconductor substrate. When the main surface of the semiconductor substrate is taken as a reference surface, a thickness of the insulating film from the reference surface is 0.5 μm or more, a surface (a main surface) of the insulating film on the side opposite to the main surface is a surface having flatness, and a plurality of types of bottom surfaces of which depths from the reference surface are different from each other are provided on the main surface of the semiconductor substrate in the photosensitive regions.

## Claims

### Claim 1

A solid-state imaging device, comprising:
a semiconductor substrate configured to have a main surface having a plurality of photosensitive regions; and
an insulating film configured to be provided on the main surface of the semiconductor substrate,
wherein a thickness of the insulating film from a reference surface is 0.5 μm or more, when the main surface of the semiconductor substrate is taken as the reference surface,
a surface of the insulating film on a side opposite to the main surface is a surface having flatness, and
a plurality of types of bottom surfaces of which depths from the reference surface are different from each other are provided on the main surface of the semiconductor substrate in the photosensitive regions.

### Claim 2 (depends on 1)

The solid-state imaging device according to claim 1, wherein a bottom surface having a relatively shallow depth from the reference surface and a bottom surface having a relatively deep depth from the reference surface are alternately adjacent to each other in the plurality of types of bottom surfaces.

### Claim 3 (depends on 1)

The solid-state imaging device according to claim 1, wherein:
a plurality of types of recesses configured to define each of the plurality of types of bottom surfaces are provided, and
the recesses having different depths are continuous in a first direction, and the recesses having the same depth are arranged to be spaced apart from each other in a second direction orthogonal to the first direction, in a plan view of the main surface.

### Claim 4 (depends on 1)

The solid-state imaging device according to claim 1, wherein:
a single recess configured to define each of the plurality of types of bottom surfaces is provided, and
the bottom surfaces having different depths are continuous in a first direction, and the bottom surfaces having the same depth are continuous in a second direction orthogonal to the first direction, in a plan view of the main surface.

### Claim 5 (depends on 1)

The solid-state imaging device according to claim 1, wherein:
a plurality of types of recesses configured to define each of the plurality of types of bottom surfaces are provided, and
in a plan view of the main surface, the recesses having different depths are arranged to be spaced apart from each other in a first direction, and the recesses having the same depth are arranged to be spaced apart from each other in a second direction orthogonal to the first direction.

### Claim 6 (depends on 1)

The solid-state imaging device according to claim 1, wherein:
a plurality of types of recesses configured to define each of the plurality of types of bottom surfaces are provided, and
in a plan view of the main surface, each of the recesses extends in a first direction, and the recesses having different depths are arranged to be spaced apart from each other in a second direction orthogonal to the first direction.

### Claim 7 (depends on 6)

The solid-state imaging device according to claim 6, wherein at least one of the recesses has a single recess configured to define two or more of the plurality of types of bottom surfaces.

### Claim 8 (depends on 3)

The solid-state imaging device according to claim 3, wherein an opening width of the recess is twice or less the thickness of the insulating film.

### Claim 9 (depends on 3)

The solid-state imaging device according to claim 3, wherein an opening width of at least one of the recesses is equal to or less than the thickness of the insulating film.

### Claim 10 (depends on 1)

The solid-state imaging device according to claim 1, wherein the plurality of types of the bottom surfaces are 5 types or less.

### Claim 11 (depends on 1)

The solid-state imaging device according to claim 1, wherein a height of unevenness of a surface of the insulating film on the side opposite to the main surface is smaller than a maximum depth of the plurality of types of bottom surfaces.

### Claim 12 (depends on 4)

The solid-state imaging device according to claim 4, wherein an opening width of the recess is twice or less the thickness of the insulating film.

### Claim 13 (depends on 5)

The solid-state imaging device according to claim 5, wherein an opening width of the recess is twice or less the thickness of the insulating film.

### Claim 14 (depends on 6)

The solid-state imaging device according to claim 6, wherein an opening width of the recess is twice or less the thickness of the insulating film.

### Claim 15 (depends on 4)

The solid-state imaging device according to claim 4, wherein an opening width of at least one of the recesses is equal to or less than the thickness of the insulating film.

### Claim 16 (depends on 5)

The solid-state imaging device according to claim 5, wherein an opening width of at least one of the recesses is equal to or less than the thickness of the insulating film.

### Claim 17 (depends on 6)

The solid-state imaging device according to claim 6, wherein an opening width of at least one of the recesses is equal to or less than the thickness of the insulating film.