# US 12,113,077 B2 · Polishing slurry, method for manufacturing a display device using the same and display device

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- Number: US 12,113,077 B2
- Document ID: US12113077B2
- Status: Granted
- Kind: B2
- Application number: 16/927,327
- Filed: 2020-07-13
- Published: 2021-02-11
- Granted: 2024-10-08
- Earliest claimed: 2019-08-06
- Assignees: Samsung Display Co., Ltd.; UBmaterials lnc.
- Applicants: Samsung Display Co., LTD.; UBmaterials Inc.
- Inventors: Joon-Hwa Bae; Jin Hyung Park; Bonggu Kang; Seungbae Kang; Heesung Yang; Woojin Cho; Byoung Kwon Choo
- Web page: https://patentgrep.com/patent/US12113077B2

## CPC

- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/60: wherein the TFTs are in active matrices
- C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)}
- C09K 3/1409: {Abrasive particles per se (preparation of diamond C01B32/25)}
- H10D 86/021: {of multiple TFTs}
- H10D 86/425: {having different crystal properties in different TFTs or within an individual TFT}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/471: {having different architectures, e.g. having both top-gate and bottom-gate TFTs}
- H10P 95/062: {involving a dielectric removal step}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A polishing slurry is disclosed which includes about 0.01 wt % to about 10 wt % of polishing particles, about 0.005 wt % to about 0.1 wt % of a dispersing agent, about 0.001 wt % to about 1 wt % of an oxide-polishing promoter including a pyridine compound, about 0.05 wt % to about 0.1 wt % of a nitride-polishing inhibitor including an amino acid or an anionic organic acid, and water. A method for manufacturing a display device including an active pattern disposed on a base substrate, a gate metal pattern including a gate electrode overlapping the active pattern, a planarized insulation layer disposed on the gate metal pattern, and a source metal pattern disposed on the planarized insulation layer is also disclosed.

## Claims

### Claim 1

A polishing slurry comprising:
about 0.01 wt % to about 10 wt % of polishing particles;
about 0.005 wt % to about 0.1 wt % of a dispersing agent including a polyethylene oxide/polypropylene oxide copolymer;
about 0.001 wt % to about 1 wt % of an oxide-polishing promoter including picolinic acid;
about 0.05 wt % to about 0.1 wt % of a nitride-polishing inhibitor; and
water, wherein
the nitride-polishing inhibitor includes glutamic acid,
a pH of the polishing slurry is about 2 to about 4, and
a polishing selectivity of the polishing slurry for silicon oxide to silicon nitride is at least about 70:1.

### Claim 2 (depends on 1)

The polishing slurry of claim 1, wherein the polishing particles include at least one selected from the group consisting of ceria, silica, alumina, zirconia, and titania particles.

### Claim 3 (depends on 1)

The polishing slurry of claim 1, wherein the polishing particles have an average diameter of about 6 nm to about 350 nm.

### Claim 4 (depends on 3)

The polishing slurry of claim 3, wherein the polishing particles have an average diameter of about 20 nm to about 100 nm.

### Claim 5 (depends on 1)

The polishing slurry of claim 1, wherein the nitride-polishing inhibitor further includes at least one selected from the group consisting of glycine, alanine, proline, valine, leucine, isoleucine, methionine, phenylalanine, tyrosine, tryptophan, serine, threonine, cysteine, asparagine, glutamine, lysine, arginine, histidine, acetic acid, gluconic acid, succinic acid, oxalic acid, malic acid, and maleic acid.

### Claim 6 (depends on 1)

The polishing slurry of claim 1, wherein a pH of the polishing slurry is about 3 to about 4.

### Claim 7 (depends on 1)

The polishing slurry of claim 1, wherein
the polishing particles include ceria particles.

### Claim 8 (depends on 1)

The polishing slurry of claim 1, wherein the polishing selectivity of the polishing slurry for silicon oxide to silicon nitride is 69:1 to 91:1.