# US 12,113,058 B2 · Display device with a static electricity discharging circuit > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,113,058 B2 - Document ID: US12113058B2 - Status: Granted - Kind: B2 - Application number: 17/215,682 - Filed: 2021-03-29 - Published: 2021-10-21 - Granted: 2024-10-08 - Earliest claimed: 2020-04-16 - Assignees: Samsung Display Co., Ltd. - Applicants: Samsung Display Co., LTD. - Inventors: Kang Moon Jo; An Su Lee; June Whan Choi - Web page: https://patentgrep.com/patent/US12113058B2 ## CPC - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D 89/611: {using diodes as protective elements} - H10D 86/60: wherein the TFTs are in active matrices - H10D 89/921: {characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses} - H10D 89/911: {using passive elements as protective elements} - H10D 89/931: {characterised by the dispositions of the protective arrangements} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A display device includes a substrate including a display area and a non-display area; a semiconductor layer including a source area, a channel area, and a drain area and disposed in the non-display area of the substrate; a gate electrode overlapping the channel area of the semiconductor layer; a gate insulating layer disposed between the gate electrode and the channel area of the semiconductor layer; a source electrode electrically connected to the source area of the semiconductor layer; and a drain electrode electrically connected to the drain area of the semiconductor layer, wherein a lateral side of the gate electrode overlaps the drain electrode. ## Claims ### Claim 1 A display device comprising: a substrate including a display area containing a plurality of pixels and a non-display area surrounding the display area; a semiconductor layer including a transistor having a source area, a channel area, and a drain area, the transistor disposed in the non-display area of the substrate; a gate electrode of the transistor overlapping the channel area of the semiconductor layer; a gate insulating layer disposed between the gate electrode and the channel area of the semiconductor layer; a source electrode electrically connected to the source area of the semiconductor layer; and a drain electrode electrically connected to the drain area of the semiconductor layer, wherein both lateral sides of the gate electrode facing each other overlap the drain electrode in a direction perpendicular to the substrate, the gate electrode includes an expansion not overlapping the semiconductor layer in the direction perpendicular to the substrate, the expansion of the gate electrode overlaps the drain electrode in the direction perpendicular to the substrate, an interlayer insulating layer is disposed between the expansion of the gate electrode and the drain electrode, the interlayer insulating layer includes an opening, the expansion of the gate electrode is electrically connected to the drain electrode in the opening, and the gate electrode comprises: a portion that overlaps the drain electrode in the direction perpendicular to the substrate and another portion that does not overlap the drain electrode in the direction perpendicular to the substrate, the another portion having a wider width than the portion that overlaps the drain electrode. ### Claim 2 (depends on 1) The display device of claim 1, wherein an upper side of the gate electrode overlaps the drain electrode in a direction perpendicular to the substrate. ### Claim 3 (depends on 2) The display device of claim 2, wherein an entire upper side of the gate electrode overlapping the channel area overlaps the drain electrode in the direction perpendicular to the substrate. ### Claim 4 (depends on 1) The display device of claim 1, wherein the semiconductor layer includes an oxide semiconductor. ### Claim 5 (depends on 1) The display device of claim 1, wherein the source electrode and the drain electrode include titanium. ### Claim 6 (depends on 1) The display device of claim 1, wherein a threshold voltage of the transistor is equal to or greater than about 0.55 V. ### Claim 7 (depends on 1) The display device of claim 1, further comprising: a source line disposed in a first direction, and a power supply line disposed in a second direction, wherein the source electrode is electrically connected to the source line, and the drain electrode is electrically connected to the power supply line through a connecting member. ### Claim 8 (depends on 1) The display device of claim 1, wherein an interlayer insulating layer is disposed between the gate electrode and the drain electrode, the interlayer insulating layer includes an opening, and the gate electrode is electrically connected to the drain electrode in the opening. ### Claim 9 (depends on 1) The display device of claim 1, wherein the gate electrode traverses completely between pixels along a first direction, the gate electrode completely traverses across the channel area of the semiconductor layer along the first direction, and the expansion of the gate electrode is defined as a portion of the gate electrode where the gate electrode is wider in a second direction perpendicular to the first direction as compared to a width of the gate electrode that traverses across the channel area. ### Claim 10 A display device comprising: a display unit that displays images; and a static electricity prevention circuit disposed on a lateral side of the display unit, the static electricity prevention circuit including: a first diode electrically connected to a first power supply line; and a second diode electrically connected to a second power supply line, wherein each of the first diode and the second diode includes: a substrate; a semiconductor layer including a source area, a channel area, and a drain area, and disposed on the substrate; a gate electrode overlapping the channel area of the semiconductor layer; a gate insulating layer disposed between the gate electrode and the channel area of the semiconductor layer; a source electrode electrically connected to the source area of the semiconductor layer; and a drain electrode electrically connected to a drain area of the semiconductor layer, wherein both lateral sides of the gate electrode facing each other overlap the drain electrode in a direction perpendicular to the substrate, the gate electrode includes an expansion not overlapping the semiconductor layer in the direction perpendicular to the substrate, the expansion of the gate electrode overlaps the drain electrode in the direction perpendicular to the substrate, an interlayer insulating layer is disposed between the expansion of the gate electrode and the drain electrode, the interlayer insulating layer includes an opening, the expansion of the gate electrode is electrically connected to the drain electrode in the opening, and the expansion of the gate electrode has a wider width than the portion of the gate electrode that overlaps the drain electrode. ### Claim 11 (depends on 10) The display device of claim 10, wherein a voltage applied to the second power supply line is higher than a voltage applied to the first power supply line. ### Claim 12 (depends on 11) The display device of claim 11, wherein static electricity is discharged to the first power supply line through a first diode when static electricity input to the static electricity prevention circuit is lower than a voltage applied to the first power supply line, and static electricity is discharged to the second power supply line through a second diode when the static electricity input to the static electricity prevention circuit is greater than a voltage applied to the second power supply line. ### Claim 13 (depends on 10) The display device of claim 10, wherein an upper side of the gate electrode overlaps the drain electrode in a direction perpendicular to the substrate. ### Claim 14 (depends on 10) The display device of claim 10, wherein the semiconductor layer includes an oxide semiconductor, and the source electrode and the drain electrode include titanium. ### Claim 15 (depends on 10) The display device of claim 10, wherein a threshold voltage of at least one of the first diode and the second diode is equal to or greater than about 0.55 V. ### Claim 16 (depends on 10) The display device of claim 10, wherein an interlayer insulating layer is disposed between the gate electrode and the drain electrode, the interlayer insulating layer includes an opening, and the gate electrode is electrically connected to the drain electrode in the opening. ### Claim 17 (depends on 10) The display device of claim 10, wherein the gate electrode traverses completely between pixels along a first direction, the gate electrode completely traverses across the channel area of the semiconductor layer along the first direction, and the expansion of the gate electrode is defined as a portion of the gate electrode where the gate electrode is wider in a second direction perpendicular to the first direction as compared to a width of the gate electrode that traverses across the channel area.