Method for preparing semiconductor device with wire bond

A method for preparing a semiconductor device, comprising:

• providing an integrated circuit die having a bond pad, wherein the bond pad includes aluminum (Al);
• forming a first dielectric layer over the bond pad;
• forming a second dielectric layer over the first dielectric layer;
• forming a first photoresist layer over the second dielectric layer;
• etching the first dielectric layer and the second dielectric layer using the first photoresist layer as a mask to form an opening which is a through opening penetrating through the first dielectric layer and the second dielectric layer;
• forming a second photoresist layer over the first photoresist layer and extending into the opening;
• etching the bond pad using the second photoresist layer as a mask to form a recess;
• and
• performing a bonding process to bond a wire bond to the recess of the bond pad, wherein the wire bond includes copper (Cu);
• wherein a splash is formed around the wire bond and in the opening during the bonding process.