# US 12,113,017 B2 · Packed terminal transistors

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- Number: US 12,113,017 B2
- Document ID: US12113017B2
- Status: Granted
- Kind: B2
- Application number: 17/651,561
- Filed: 2022-02-17
- Published: 2023-08-17
- Granted: 2024-10-08
- Earliest claimed: 2022-02-17
- Assignees: QUALCOMM Incorporated
- Applicants: QUALCOMM Incorporated
- Inventors: Thomas Hua-Min Williams; Khaja Ahmad Shaik; Jeongah Park; Rinoj Thomas; Harini Siddaiah; Raj Kumar
- Web page: https://patentgrep.com/patent/US12113017B2

## CPC

- H10D 84/0158: {the components including FinFETs}
- H10W 20/43: Layouts of interconnections
- H10D 30/6219: {characterised by the source or drain electrodes}
- H10D 84/0149: {Manufacturing their interconnections or electrodes, e.g. source or drain electrodes}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/8312: {the IGFETs characterised by having different source or drain region structures, e.g. IGFETs having symmetrical source or drain regions integrated with IGFETs having asymmetrical source or drain regions}
- H10D 84/834: {comprising FinFETs}
- H10D 89/10: Integrated device layouts
- H10W 20/42: Vias, e.g. via plugs
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A die includes fins extending in a first direction, a gate formed over the fins, the gate extending in a second direction that is perpendicular to the first direction, a first source/drain contact layer formed over the fins and extending in the second direction, and a second source/drain contact layer formed over the fins and extending in the second direction, wherein the first source/drain contact layer and the second source/drain contact layer are on opposite sides of the gate. The die also includes a first source/drain metal layer electrically coupled to the first source/drain contact layer, and a second source/drain metal layer electrically coupled to the second source/drain contact layer, wherein the first source/drain metal layer and the second source/drain metal layer do not overlap one or more of the fins.

## Claims

### Claim 1

A die, comprising:
fins extending in a first direction;
a gate formed over the fins, the gate extending in a second direction that is perpendicular to the first direction;
a first source/drain contact layer formed over the fins and extending in the second direction;
a second source/drain contact layer formed over the fins and extending in the second direction, wherein the first source/drain contact layer and the second source/drain contact layer are on opposite sides of the gate;
a first source/drain metal layer electrically coupled to the first source/drain contact layer; and
a second source/drain metal layer electrically coupled to the second source/drain contact layer, wherein the first source/drain metal layer and the second source/drain metal layer do not overlap one or more of the fins.

### Claim 2 (depends on 1)

The die of claim 1, further comprising a gate metal layer electrically coupled to the gate, wherein the one or more of the fins are located within a region between the gate metal layer and each of the first source/drain metal layer and the second source/drain metal layer.

### Claim 3 (depends on 2)

The die of claim 2, wherein:
the gate metal layer extends in the first direction; and
each of the first source/drain metal layer and the second source/drain metal layer extends in the second direction.

### Claim 4 (depends on 2)

The die of claim 2, wherein the gate metal layer, the first source/drain metal layer, and the second source/drain metal layer are formed from a first metal layer.

### Claim 5 (depends on 1)

The die of claim 1, further comprising:
first vias disposed between the first source/drain contact layer and the first source/drain metal layer; and
second vias disposed between the second source/drain contact layer and the second source/drain metal layer.

### Claim 6 (depends on 5)

The die of claim 5, wherein each of the first vias and each of the second vias has a rectangular footprint.

### Claim 7 (depends on 6)

The die of claim 6, wherein the rectangular footprint of each of the first vias and each of the second vias has a length and a width wherein the length is at least 1.2 times longer than the width.

### Claim 8 (depends on 6)

The die of claim 6, wherein the rectangular footprint of each of the first vias and each of the second vias has a length and a width wherein the length is at least 1.5 times longer than the width.

### Claim 9 (depends on 5)

The die of claim 5, wherein the first vias and the second vias do not overlap the one or more of the fins.

### Claim 10 (depends on 5)

The die of claim 5, wherein one of the first vias overlaps at least two of the fins.

### Claim 11 (depends on 5)

The die of claim 5, wherein each of the first vias overlaps a respective pair of the fins.

### Claim 12 (depends on 5)

The die of claim 5, wherein adjacent ones of the first vias do not overlap one of the fins between the adjacent ones of the first vias.

### Claim 13

A system, comprising:
a switch comprising:
fins extending in a first direction;
a gate formed over the fins, the gate extending in a second direction that is perpendicular to the first direction;
a first source/drain contact layer formed over the fins and extending in the second direction;
a second source/drain contact layer formed over the fins and extending in the second direction, wherein the first source/drain contact layer and the second source/drain contact layer are on opposite sides of the gate;
a first source/drain metal layer electrically coupled to the first source/drain contact layer;
a second source/drain metal layer electrically coupled to the second source/drain contact layer, wherein the first source/drain metal layer and the second source/drain metal layer do not overlap one or more of the fins; and
a gate metal layer electrically coupled to the gate; and
a power switch controller coupled to the gate metal layer;
a power distribution network coupled to a first one of the first source/drain metal layer and the second source/drain metal layer; and
a circuit coupled to a second one of the first source/drain metal layer and the second source/drain metal layer.

### Claim 14 (depends on 13)

The system of claim 13, wherein the power switch controller is configured to turn on the switch when the circuit is in an active mode, and turn off the switch when the circuit is in an inactive mode.

### Claim 15 (depends on 13)

The system of claim 13, wherein the circuit includes at least one of sequential logic, a processor, a modem, and a memory.

### Claim 16 (depends on 13)

The system of claim 13, wherein the switch is integrated on a die.

### Claim 17 (depends on 13)

The system of claim 13, wherein the one or more of the fins are located within a region between the gate metal layer and each of the first source/drain metal layer and the second source/drain metal layer.

### Claim 18 (depends on 17)

The system of claim 17, wherein:
the gate metal layer extends in the first direction; and
each of the first source/drain metal layer and the second source/drain metal layer extends in the second direction.

### Claim 19 (depends on 13)

The system of claim 13, wherein the gate metal layer, the first source/drain metal layer, and the second source/drain metal layer are formed from a first metal layer.

### Claim 20 (depends on 13)

The system of claim 13, further comprising:
first vias disposed between the first source/drain contact layer and the first source/drain metal layer; and
second vias disposed between the second source/drain contact layer and the second source/drain metal layer.

### Claim 21 (depends on 20)

The system of claim 20, wherein each of the first vias and each of the second vias has a rectangular footprint.

### Claim 22 (depends on 21)

The system of claim 21, wherein the rectangular footprint of each of the first vias and each of the second vias has a length and a width wherein the length is at least 1.2 times longer than the width.

### Claim 23 (depends on 21)

The system of claim 21, wherein the rectangular footprint of each of the first vias and each of the second vias has a length and a width wherein the length is at least 1.5 times longer than the width.

### Claim 24 (depends on 20)

The system of claim 20, wherein the first vias and the second vias do not overlap the one or more of the fins.

### Claim 25 (depends on 20)

The system of claim 20, wherein one of the first vias overlaps at least two of the fins.

### Claim 26 (depends on 20)

The system of claim 20, wherein each of the first vias overlaps a respective pair of the fins.

### Claim 27 (depends on 20)

The system of claim 20, wherein adjacent ones of the first vias do not overlap one of the fins between the adjacent ones of the first vias.