# US 12,113,013 B2 · Dual color via patterning > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,113,013 B2 - Document ID: US12113013B2 - Status: Granted - Kind: B2 - Application number: 17/483,922 - Filed: 2021-09-24 - Published: 2023-03-30 - Granted: 2024-10-08 - Earliest claimed: 2021-09-24 - Assignees: International Business Machines Corporation - Applicants: International Business Machines Corporation - Inventors: Hsueh-Chung Chen; Yann Mignot; Su Chen Fan; Mary Claire Silvestre; Chi-Chun Liu; Junli Wang - Web page: https://patentgrep.com/patent/US12113013B2 ## CPC - H10W 20/42: Vias, e.g. via plugs - H10W 20/056: {by filling conductive material into holes, grooves or trenches} - H10W 20/084: {for dual-damascene structures} - H10W 20/435: {Cross-sectional shapes or dispositions of interconnections} - H10W 20/4421: {the principal metal being copper} - H10W 20/4441: {the principal metal being a refractory metal} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A device includes: a first dielectric material; a first metal line in the first dielectric material; a second dielectric material disposed on the first dielectric material and the first metal line; a second metal line in the second dielectric material; and a plurality of metal vias disposed on a same level and connecting the first metal line and the second metal line, wherein the plurality of metal vias comprise a first top via and a bottom via having different sidewall profile angles. ## Claims ### Claim 1 A device comprising: a first dielectric material; a first metal line in the first dielectric material; a second dielectric material disposed on the first dielectric material and the first metal line; a second metal line in the second dielectric material, wherein the first metal line and the second metal line have angled sidewalls; and a plurality of metal vias disposed on a same level and connecting the first metal line and the second metal line, wherein the plurality of metal vias comprise a first top via and a bottom via having different sidewall profile angles. ### Claim 2 (depends on 1) The device of claim 1, wherein the first metal line and the second metal line comprise a same metal. ### Claim 3 (depends on 1) The device of claim 1, wherein at least one of the first metal line and the second metal line comprises an etchable metal. ### Claim 4 (depends on 1) The device of claim 1, wherein the first metal line and the second metal line comprise different metals. ### Claim 5 (depends on 1) The device of claim 1, wherein the first top via and the bottom via have a height between about 5 to 50 nanometers. ### Claim 6 (depends on 1) The device of claim 1, wherein the first top via comprises: a base having a first length; and a top having a second length, wherein the first length is greater than the second length, and the top of the first top via contacts a bottom of the second metal line, and a sidewall of the first top via extends between the base of the first top via and the top of the first top via and defines a sidewall profile angle of the first top via. ### Claim 7 (depends on 1) The device of claim 1, wherein the bottom via comprises: a base having a first length; and a top having a second length, wherein the first length is less than the second length, and the base of the bottom via contacts a top of the first metal line, wherein a sidewall of the bottom via extends between the base of the bottom via to the top of the bottom via and defines a sidewall profile angle of the bottom via. ### Claim 8 (depends on 1) The device of claim 1, wherein the first top via extends above a surface of the first dielectric material. ### Claim 9 (depends on 1) The device of claim 1, further comprising a second top via disposed on a top of the second metal line. ### Claim 10 (depends on 9) The device of claim 9, wherein the second top via extends above a surface of the second dielectric material. ### Claim 11 A device comprising: a first dielectric material; a first metal line in the first dielectric material; a second dielectric material disposed on the first dielectric material and the first metal line; a second metal line in the second dielectric material, wherein the first metal line and the second metal line have angled sidewalls; and a plurality of metal vias having a same height and connecting the first metal line and the second metal line, wherein the plurality of metal vias comprise a first top via and a bottom via having inverse sidewall profile angles. ### Claim 12 (depends on 11) The device of claim 11, wherein the first top via and the bottom via are separated by a portion of the second dielectric material. ### Claim 13 (depends on 11) The device of claim 11, wherein the height of the first top via and the bottom via is between about 5 to 50 nanometers. ### Claim 14 (depends on 11) The device of claim 11, wherein the first top via comprises: a first base having a first length; and a first top having a second length, wherein the first length is greater than the second length, and the first top of the first top via contacts a bottom of the second metal line, and a sidewall of the first top via extends between the first base and the first top and defines a first sidewall profile angle of the first top via; and wherein the bottom via comprises: a second base having a third length; and a second top having a fourth length, wherein the third length is less than the fourth length, and the second base of the bottom via contacts a top of the first metal line, wherein a sidewall of the bottom via extends between the second base and the second top and defines a second sidewall profile angle of the bottom via. ### Claim 15 (depends on 11) The device of claim 11, further comprising a second top via extending from a top of the second metal line. ### Claim 16 (depends on 15) The device of claim 15, wherein the second top via comprises: a base having a first length; and a top having a second length, wherein the first length is greater than the second length, and a sidewall of the second top via extends between the base and the top and defines a sidewall profile angle of the second top via. ### Claim 17 A method of manufacturing a dual damascene device comprising: providing a substrate; forming a trench in the substrate; depositing a first metal in the trench by a first metallization; patterning the first metal to form a first metal via by a first color definition; depositing a second dielectric material over the substrate and the first metal; patterning the second dielectric material to form a second trench and a second via using a second color definition, wherein the second trench exposes at least a portion of the first metal via, and the second via exposes a portion of the first metal; and depositing a second metal in the second trench and the second via by a second metallization to form a second metal via. ### Claim 18 (depends on 17) The method of claim 17, further comprising patterning the second metal to form a third metal via extending from a top surface of the second metal. ### Claim 19 (depends on 17) The method of claim 17, wherein the patterning of the first metal comprises forming a first sidewall of the first metal via angled from a base of the first metal via to a top of the first metal via, wherein the base of the first metal via is wider than the top of the first metal via, and the top of the first metal via contacts the second metal, and wherein the patterning of the second dielectric material to form the second via defines a second sidewall of the second metal via angled from a base of the second metal via to a top of the second metal via, wherein the base of the first metal via is narrower than the top of the first metal via, the base of the second metal via contacts the first metal. ### Claim 20 (depends on 19) The method of claim 19, wherein the first sidewall and the second sidewall have inverse sidewall profile angles.