# US 12,112,993 B2 · Heat radiation member

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- Number: US 12,112,993 B2
- Document ID: US12112993B2
- Status: Granted
- Kind: B2
- Application number: 17/289,259
- Filed: 2019-08-30
- Published: 2021-12-23
- Granted: 2024-10-08
- Earliest claimed: 2018-10-31
- Assignees: A.L.M.T. Corp.
- Applicants: A.L.M.T. Corp.
- Inventors: Ryota Matsugi; Isao Iwayama; Chieko Tanaka; Hideaki Morigami
- Web page: https://patentgrep.com/patent/US12112993B2

## CPC

- H10W 40/254: {Diamond}
- B22F 7/064: {using an intermediate powder layer}
- B23K 1/0016: {Soldering of electronic components}
- B23K 35/325: {Ti as the principal constituent}
- B32B 7/12: using interposed adhesives or interposed materials with bonding properties
- B32B 9/005: {comprising one layer of ceramic material, e.g. porcelain, ceramic tile (layered products with at least two ceramic layers composed mainly of ceramic B32B18/00)}
- B32B 9/041: {of metal}
- B32B 15/043: {of metal (B32B15/01 takes precedence)}
- B32B 15/20: comprising aluminium or copper {(B32B15/016 and B32B15/017 take precedence)}
- C22C 14/00: Alloys based on titanium
- C22C 26/00: Alloys containing diamond {or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes}
- C22C 30/02: containing copper
- H10W 40/258: {Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence)}
- B23K 2101/40: Semiconductor devices
- B23K 2103/172: {wherein at least one of the layers is non-metallic}
- B23K 2103/56: {being semiconducting}
- B32B 2250/03: 3 layers
- B32B 2250/05: 5 or more layers
- B32B 2262/106: Carbon fibres, e.g. graphite fibres
- B32B 2264/10: Inorganic particles
- B32B 2264/107: Ceramic
- B32B 2264/108: Carbon, e.g. graphite particles
- B32B 2307/206: Insulating
- B32B 2307/302: Conductive
- B32B 2307/732: Dimensional properties
- B32B 2457/00: Electrical equipment
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- B22F: WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER (making alloys by powder metallurgy C22C); APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- C22C: ALLOYS (treatment of alloys C21D, C22F)

## Abstract

A heat radiation member excellent in electrical insulation and better in thermal conduction is provided. The heat radiation member includes a substrate composed of a composite material containing diamond and a metallic phase, an insulating plate provided on at least a part of front and rear surfaces of the substrate and composed of an aluminum nitride, and a single bonding layer interposed between the substrate and the insulating plate, the heat radiation member having thermal conductivity not lower than 400 W/m·K.

## Claims

### Claim 1

A heat radiation member for a semiconductor element comprising:
a substrate composed of a composite material containing diamond and a metallic phase;
an insulating plate provided on a surface of the substrate and composed of aluminum nitride; and
a single bonding layer formed on the surface of the substrate, interposed between the substrate and the insulating plate,
wherein a constituent metal of the metallic phase is pure silver or a silver-based alloy,
the bonding layer is composed of an alloy containing Ag, Cu, and Ti, and
a concentration of the Ti in the bonding layer is not lower than 40 atomic % and not higher than 95 atomic % with a total amount of Ag, Cu, and Ti being defined as 100 atomic %.

### Claim 2 (depends on 1)

The heat radiation member according to claim 1, wherein
the bonding layer is composed of an alloy containing Ti and a main metal element that makes up the metallic phase.

### Claim 3 (depends on 1)

The heat radiation member according to claim 1, wherein the bonding layer comprise a brazing material composed of a silver-based alloy based on the eutectic alloy of Ag and Cu and containing Ti.

### Claim 4 (depends on 3)

The heat radiation member according to claim 3, the concentration of Ti is not lower than 0.5 atomic % and not higher than 3.0 atomic % with the total amount of Ag, Cu, and Ti being defined as 100 atomic %.