# US 12,112,982 B2 · Nanoscale resolution, spatially-controlled conductivity modulation of dielectric materials using a focused ion beam

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- Number: US 12,112,982 B2
- Document ID: US12112982B2
- Status: Granted
- Kind: B2
- Application number: 17/293,276
- Filed: 2019-11-07
- Published: 2022-01-20
- Granted: 2024-10-08
- Earliest claimed: 2018-11-14
- Assignees: Northwestern University
- Applicants: Northwestern University
- Inventors: Hooman Mohseni; Simone Bianconi
- Web page: https://patentgrep.com/patent/US12112982B2

## CPC

- H10W 20/094: {by transforming insulators into conductors}
- H10P 34/00: Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10W 20/033: {in openings in dielectrics}
- H10W 20/095: {by irradiating with electromagnetic or particle radiation (plasma treatment H10W20/096)}
- H10W 70/611: {for connecting multiple chips together}
- H10W 70/641: {Adaptable interconnections, e.g. fuses or antifuses}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Methods for creating a conductive feature in a dielectric material are provided. In an embodiment, such a method comprises irradiating a region of a dielectric material having a resistivity of at least 108 W cm with a focused ion beam, the irradiated region corresponding to a conductive feature embedded in the dielectric material, the conductive feature having a conductivity greater than that of the dielectric material; and forming one or more contact pads of a conductive material in electrical communication with the conductive feature, the one or more contact pads configured to apply a voltage across the conductive feature using a voltage source.

## Claims

### Claim 1

A method comprising:
(a) irradiating a region of a dielectric material having a resistivity of at least 108 Ω cm with a focused ion beam, the irradiated region corresponding to a conductive feature embedded in the dielectric material, the conductive feature having a conductivity greater than that of the dielectric material; and
(b) forming one or more contact pads of a conductive material in electrical communication with the conductive feature, the one or more contact pads configured to apply a voltage across the conductive feature using a voltage source, the method further comprising heating the conductive feature under an oxidizing atmosphere for a period of time so as to erase the conductive feature.

### Claim 2 (depends on 1)

The method of claim 1, wherein the dielectric material is Al2O3.

### Claim 3 (depends on 1)

The method of claim 1, wherein the dielectric material is SiN.

### Claim 4 (depends on 1)

The method of claim 1, wherein the dielectric material has a thickness of 50 nm or less.

### Claim 5 (depends on 1)

The method of claim 1, wherein the dielectric material is amorphous.

### Claim 6 (depends on 1)

The method of claim 1, wherein the conductive material of the one or more contact pads is selected such that its conduction band is aligned with an energy level of defects in the conductive feature induced by the irradiation.

### Claim 7 (depends on 1)

The method of claim 1, wherein the conductive feature is a nanowire having a length greater than its width.

### Claim 8 (depends on 1)

The method of claim 1, wherein the conductive feature has a predetermined length and a predetermined width and the irradiation is carried out using an ion dosage that provides a peak conductivity at the predetermined length and width.

### Claim 9 (depends on 1)

The method of claim 1, wherein the irradiation is carried out using an ion dosage in a range of from 102 μC/cm2 to 106 μC/cm2 and an ion energy in a range of from 5 keV to 50 keV.

### Claim 10 (depends on 1)

The method of claim 1, wherein the dielectric material is TiO2.

### Claim 11 (depends on 1)

The method of claim 1, wherein the dielectric material is SiO2.

### Claim 12 (depends on 1)

The method of claim 1, wherein the dielectric material has a first surface and a second surface opposite the first surface and further wherein step (b) forms multiple contact pads on the first surface of the dielectric material such that the multiple contact pads are positioned within a plane.