# US 12,112,969 B2 · Apparatus and methods for wafer chucking on a susceptor for ALD > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,112,969 B2 - Document ID: US12112969B2 - Status: Granted - Kind: B2 - Application number: 17/403,756 - Filed: 2021-08-16 - Published: 2021-12-09 - Granted: 2024-10-08 - Earliest claimed: 2013-03-14 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Joseph Yudovsky; Kaushal Gangakhedkar - Web page: https://patentgrep.com/patent/US12112969B2 ## CPC - H10P 72/78: using vacuum or suction, e.g. Bernoulli chucks - C23C 16/45544: {characterized by the apparatus} - C23C 16/458: characterised by the method used for supporting substrates in the reaction chamber - C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) - C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} - H10P 72/7611: {characterised by edge profile or support profile} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer. ## Claims ### Claim 1 A method of processing a wafer in a processing chamber, the method comprising: positioning a wafer in a recess in a top surface of a susceptor assembly, a central axis of the wafer offset from a central axis of the susceptor assembly, the wafer having a top surface and a bottom surface, the recess including at least one passage extending through the susceptor assembly to a bottom surface of the susceptor assembly; passing the wafer and susceptor assembly under a gas distribution assembly comprising a plurality of substantially parallel gas channels directing flows of gases toward the top surface of the susceptor assembly; creating a pressure differential between the top surface and bottom surface of the wafer so that the flow of gases directed toward the top surface of the wafer creates a higher pressure than the pressure at the bottom surface of the wafer, the pressure differential created within the at least one passage by a vacuum source; and directing a valve positioned between the bottom surface of the susceptor assembly and the vacuum source to allow a flow of a gas to pass through the at least one passage to the recess to provide positive pressure on the back side of the wafer to remove the wafer from the susceptor assembly. ### Claim 2 (depends on 1) The method of claim 1, wherein the vacuum source comprises a hollow area within a drive shaft of the susceptor assembly. ### Claim 3 (depends on 1) The method of claim 1, wherein removing the wafer comprises closing the valve. ### Claim 4 (depends on 1) The method of claim 1, wherein the susceptor is coated with a material comprising silicon carbide. ### Claim 5 (depends on 1) The method of claim 1, wherein the susceptor assembly further comprises at least one hole extending from one or more of the top surface and bottom surface of the susceptor assembly to the at least one passage. ### Claim 6 (depends on 5) The method of claim 5, wherein there are a plurality of holes spaced a distance apart, the distance being in the range of about 2 to about 4 times a diameter of the holes. ### Claim 7 (depends on 1) The method of claim 1, wherein further comprising a channel within the recess in fluid communication the passage. ### Claim 8 (depends on 7) The method of claim 7, wherein the channel forms a circular path within the recess, the circular path having a diameter less the size of the recess. ### Claim 9 (depends on 2) The method of claim 2, wherein the hollow area is in fluid communication with a vacuum source. ### Claim 10 (depends on 9) The method of claim 9, wherein the valve is positioned between the recess and the hollow area. ### Claim 11 (depends on 10) The method of claim 10, wherein there is a connector between the valve and a dechucking gas source and, optionally, a dechucking gas plenum in communication with and between the valve and the dechucking gas source. ### Claim 12 (depends on 1) The method of claim 1, wherein when a wafer is positioned within the recess, there is a pressure differential between the top surface of a wafer and the bottom surface of the wafer greater than about 10 torr. ### Claim 13 (depends on 12) The method of claim 12, wherein when a wafer is positioned in the recess of the susceptor assembly, the differential pressure between the top surface of the wafer and the pressure in the recess equates to a chucking force large enough to hold a 300 mm wafer at a bolt center radius of about 320 mm at a rotational speed of about 200 rpm. ### Claim 14 (depends on 1) The method of claim 1, wherein the pressure differential between the top surface and bottom surface of the wafer is adjusted by changing the pressure of the gases from the gas distribution assembly. ### Claim 15 (depends on 14) The method of claim 14, wherein the distance between the gas distribution assembly and the wafer or susceptor surface is in in the range of about 0.5 mm to about 2.0 mm, or in the range of about 0.7 mm to about 1.5 mm, or in the range of about 0.9 mm to about 1.1 mm, or about 1.0 mm. ### Claim 16 (depends on 1) The method of claim 1, wherein the pressure differential between the top surface and the bottom surface of the wafer is adjusted by changing the flow rate of the gases from the gas distribution assembly. ### Claim 17 (depends on 1) The method of claim 1, wherein the pressure differential between the top surface and the bottom surface of the wafer is adjusted by changing a distance between the gas distribution assembly and the wafer or susceptor surface. ### Claim 18 (depends on 1) The method of claim 1, wherein the pressure differential between the top surface and the bottom surface of the wafer is adjusted by changing the vacuum source pressure.