# US 12,112,955 B2 · Film formation apparatus, film formation method, and method for fabricating semiconductor device

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- Number: US 12,112,955 B2
- Document ID: US12112955B2
- Status: Granted
- Kind: B2
- Application number: 17/462,366
- Filed: 2021-08-31
- Published: 2022-09-22
- Granted: 2024-10-08
- Earliest claimed: 2021-03-18
- Assignees: Kioxia Corporation
- Applicants: Kioxia Corporation
- Inventors: Yusuke Kondo; Soichi Yamazaki
- Web page: https://patentgrep.com/patent/US12112955B2

## CPC

- H10P 50/73: {using masks for insulating materials}
- C23C 14/042: {using masks}
- C23C 14/0605: {Carbon}
- C23C 14/34: Sputtering
- C23C 16/042: {using masks}
- C23C 16/045: {Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates}
- C23C 16/26: Deposition of carbon only
- C23C 16/5096: {Flat-bed apparatus}
- H01J 37/32651: {Shields, e.g. dark space shields, Faraday shields}
- H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 69/00: Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
- H01J 2237/332: Coating
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A film forming apparatus includes an electrode, a target holder configured to hold a film forming target so as to face the electrode, and a masking shield holder configured to hold a masking shield between the electrode and the target holder. The masking shield includes a lattice portion having a plurality of openings therein and a frame portion supporting the lattice portion.

## Claims

### Claim 1

A method for manufacturing a semiconductor device, comprising:
forming a masking layer on a processing target that is on a substrate, the masking layer comprising a first film having a plurality of primary portions partitioned by a groove region, a second film selectively within and filling the groove region;
lithographically patterning and then etching the primary portions to form a patterned masking layer; and
processing the processing target using the patterned masking layer,
the processing target comprises a plurality of first-type films and a plurality of second-type films that are alternately stacked on the substrate.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the first film has a first thickness in the primary portions and a second thickness less than the first thickness in the groove region.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the processing of the processing target comprises etching a plurality of memory holes in the processing target using the patterned masking layer as an etch mask.

### Claim 4 (depends on 1)

The method according to claim 1, wherein no first film is in the groove region.

### Claim 5 (depends on 1)

The method according to claim 1, wherein a hardness of the first film is greater than a hardness of the second film.

### Claim 6 (depends on 1)

The method according to claim 1, wherein the first film is a diamond-like carbon (DLC) film.

### Claim 7

A method for manufacturing a semiconductor device, comprising:
forming a masking layer on a processing target that is on a substrate, the masking layer comprising a first film having a plurality of primary portions partitioned by a groove region, a second film selectively within and filling the groove region;
lithographically patterning and then etching the primary portions to form a patterned masking layer; and
processing the processing target using the patterned masking layer,
wherein a hardness of the first film is greater than a hardness of the second film.

### Claim 8 (depends on 7)

The method according to claim 7, wherein the first film has a first thickness in the primary portions and a second thickness less than the first thickness in the groove region.

### Claim 9 (depends on 7)

The method according to claim 7, wherein no first film is in the groove region.

### Claim 10 (depends on 7)

The method according to claim 7, wherein the first film is a diamond-like carbon (DLC) film.