# US 12,112,952 B2 · Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,112,952 B2
- Document ID: US12112952B2
- Status: Granted
- Kind: B2
- Application number: 17/678,093
- Filed: 2022-02-23
- Published: 2022-06-09
- Granted: 2024-10-08
- Earliest claimed: 2019-06-10
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Sungmin Kim; Daewon Ha
- Web page: https://patentgrep.com/patent/US12112952B2

## CPC

- H10D 30/798: {being provided in or under the channel regions}
- H10P 52/402: {of semiconductor materials}
- H10D 30/0194: {the stacked channels having different properties}
- H10D 30/504: {wherein the stacked channels have different properties}
- H10P 90/1914: {using bonding}
- H10P 95/06: {Planarisation of inorganic insulating materials}
- H10D 86/011: {comprising FinFETs}
- H10P 90/1906: {Preparing SOI wafers}
- H10W 10/061: {using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Methods of forming a semiconductor device and semiconductor device formed by the methods are provided. The methods of forming a semiconductor device may include providing a first substrate and a first bonding layer that is provided on the first substrate, forming a sacrificial pattern and an active pattern on a second substrate, forming a second bonding layer on the active pattern, bonding the second bonding layer onto the first bonding layer, removing the second substrate, and removing the sacrificial pattern to expose the active pattern. Forming the sacrificial pattern and the active pattern on the second substrate may include forming a preliminary sacrificial pattern and the active pattern on the second substrate and oxidizing the preliminary sacrificial pattern. The preliminary sacrificial pattern and the active pattern may be sequentially stacked on the second substrate.

## Claims

### Claim 1

A semiconductor device comprising:
a first bonding layer on a substrate;
a second bonding layer on the first bonding layer;
a plurality of active patterns stacked on the second bonding layer; and
a gate electrode that traverses the plurality of active patterns,
wherein the plurality of active patterns comprise:
a first active pattern on the second bonding layer; and
a second active pattern between the second bonding layer and the first active pattern,
wherein a widest width of the second active pattern is smaller than a widest width of the first active pattern,
wherein the gate electrode extends between the first active pattern and the second active pattern, and
wherein the gate electrode extends on an upper surface, a lower surface, and opposing side surfaces of the first active pattern and extends on an upper surface, a lower surface, and opposing side surfaces of the second active pattern.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, further comprising a device isolation layer on the second bonding layer,
wherein the plurality of active patterns further comprise a third active pattern between the second bonding layer and the second active pattern, and
the third active pattern extends into the device isolation layer.

### Claim 3 (depends on 2)

The semiconductor device of claim 2, wherein the third active pattern has a width that decreases in a direction toward the second bonding layer.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, further comprising:
a stressor on the second bonding layer; and
a device isolation layer on the stressor,
wherein the plurality of active patterns further comprise a third active pattern between the second bonding layer and the second active pattern,
wherein the third active pattern extends through the device isolation layer and extends into the stressor.

### Claim 5 (depends on 4)

The semiconductor device of claim 4, wherein the stressor is in direct contact with a lower surface and a side surface of the third active pattern.

### Claim 6 (depends on 4)

The semiconductor device of claim 4, wherein the stressor is between the second bonding layer and the device isolation layer.

### Claim 7 (depends on 4)

The semiconductor device of claim 4, wherein the stressor comprises a silicon germanium (SiGe) layer, a silicon carbide (SiC) layer, a silicon (Si) layer, a silicon nitride layer, a silicon oxynitride layer, or a combination thereof.

### Claim 8 (depends on 4)

The semiconductor device of claim 4, further comprising source/drain regions adjacent to opposing sides of the gate electrode, respectively,
wherein the stressor is between the gate electrode and the second bonding layer and between the source/drain regions and the second bonding layer.

### Claim 9 (depends on 8)

The semiconductor device of claim 8, wherein the source/drain regions are in direct contact with side surfaces of the first active pattern and side surfaces of the second active pattern.

### Claim 10

A semiconductor device comprising:
a first bonding layer on a substrate;
a second bonding layer on the first bonding layer;
an active pattern on the second bonding layer, the active pattern having a width that decreases in a first direction toward the second bonding layer;
a gate electrode that traverses the active pattern;
a stressor on the second bonding layer; and
a device isolation layer on the stressor.

### Claim 11 (depends on 10)

The semiconductor device of claim 10, wherein the active pattern comprises:
converging surfaces; and
a converging edge at which the converging surfaces contact each other,
wherein the converging edge is at or adjacent to a center of the active pattern, and
the converging surfaces converge in a second direction away from the first bonding layer.

### Claim 12 (depends on 10)

The semiconductor device of claim 10, wherein the gate electrode extends on an upper surface and side surfaces of the active pattern.

### Claim 13 (depends on 10)

The semiconductor device of claim 10,
wherein the active pattern extends into the device isolation layer.

### Claim 14 (depends on 10)

The semiconductor device of claim 10,
wherein the active pattern extends through the device isolation layer and extends into the stressor.

### Claim 15 (depends on 14)

The semiconductor device of claim 14, wherein the stressor is in direct contact with a lower surface and a side surface of the active pattern.

### Claim 16 (depends on 14)

The semiconductor device of claim 14, wherein the stressor is between the second bonding layer and the device isolation layer.

### Claim 17 (depends on 14)

The semiconductor device of claim 14, wherein the stressor comprises a silicon germanium (SiGe) layer, a silicon carbon (SiC) layer, a silicon (Si) layer, a silicon nitride layer, a silicon oxynitride layer, or a combination thereof.

### Claim 18 (depends on 14)

The semiconductor device of claim 14, further comprising source/drain regions adjacent to opposing sides of the gate electrode, respectively,
wherein the stressor is between the gate electrode and the second bonding layer and between the source/drain regions and the second bonding layer.

### Claim 19

A semiconductor device comprising:
a first bonding layer on a substrate;
a second bonding layer on the first bonding layer;
an active pattern on the second bonding layer, the active pattern having a width that decreases in a first direction toward the second bonding layer; and
a gate electrode that traverses the active pattern,
wherein an upper surface of the active pattern comprises:
converging surfaces; and
a converging edge at which the converging surfaces contact each other,
wherein the converging edge is at or adjacent to a center of the active pattern, and
the converging surfaces converge in a second direction away from the first bonding layer.