# US 12,112,947 B2 · Method of crystallizing amorphous silicon film and deposition apparatus

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,112,947 B2
- Document ID: US12112947B2
- Status: Granted
- Kind: B2
- Application number: 17/655,247
- Filed: 2022-03-17
- Published: 2022-10-06
- Granted: 2024-10-08
- Earliest claimed: 2021-04-06
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Tatsuya Miyahara; Daisuke Suzuki; Yoshihiro Takezawa; Yuki Tanabe
- Web page: https://patentgrep.com/patent/US12112947B2

## CPC

- H10P 14/3802: {Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth}
- C23C 16/0272: {Deposition of sub-layers, e.g. to promote the adhesion of the main coating}
- C23C 16/24: Deposition of silicon only
- C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)}
- C23C 16/56: After-treatment
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/274: {using seed materials}
- H10P 14/3211: {Silicon, silicon germanium or germanium}
- H10P 14/3238: {being insulating materials}
- H10P 14/3248: {consisting of two layers}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3454: {Amorphous}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A method of crystallizing an amorphous silicon film includes depositing the amorphous silicon film on a seed layer formed over a substrate while heating the amorphous silicon film at a first temperature, and forming a crystal nucleus in an outer layer of the amorphous silicon film by causing migration of silicon in the outer layer by heating the amorphous silicon film at a second temperature higher than the first temperature.

## Claims

### Claim 1

A method of crystallizing an amorphous silicon film, comprising:
depositing the amorphous silicon film on a seed layer formed over a substrate while heating the amorphous silicon film to a first temperature;
forming a crystal nucleus in an outer layer of the amorphous silicon film by causing migration of silicon in the outer layer by heating the amorphous silicon film to a second temperature higher than the first temperature; and
after forming the crystal nucleus, annealing the amorphous silicon film at a third temperature higher than the second temperature, wherein
in the annealing, the crystal nucleus is grown from the outer layer to a bottom surface side.

### Claim 2 (depends on 1)

The method of crystallizing the amorphous silicon film according to claim 1, wherein the forming of the crystal nucleus comprises forming the crystal nucleus while supplying inert gas to the amorphous silicon film.

### Claim 3 (depends on 2)

The method of crystallizing the amorphous silicon film according to claim 2, wherein the inert gas is nitrogen gas.

### Claim 4 (depends on 1)

The method of crystallizing the amorphous silicon film according to claim 1, wherein the forming of the crystal nucleus comprises forming the crystal nucleus while depositing a second amorphous silicon film on the amorphous silicon film.

### Claim 5 (depends on 1)

The method of crystallizing the amorphous silicon film according to claim 1, wherein the amorphous silicon film is formed by supplying silane gas onto the seed layer.

### Claim 6 (depends on 5)

The method of crystallizing the amorphous silicon film according to claim 5, wherein the silane gas is monosilane or disilane.

### Claim 7 (depends on 1)

The method of crystallizing the amorphous silicon film according to claim 1, wherein the first temperature is in a range between 440° C., inclusive, and 530° ° C., exclusive, and the second temperature is in a range between 550° C., inclusive, and 600° ° C., exclusive.

### Claim 8 (depends on 7)

The method of crystallizing the amorphous silicon film according to claim 7, wherein the forming of the crystal nucleus comprises forming the crystal nucleus at a temperature between 560° ° C., inclusive, and 580° ° C., inclusive.

### Claim 9 (depends on 1)

The method of crystallizing the amorphous silicon film according to claim 1, wherein the forming of the crystal nucleus comprises forming the crystal nucleus while evacuating a process chamber in which the substrate is accommodated.

### Claim 10 (depends on 1)

The method of crystallizing the amorphous silicon film according to claim 1, further comprising, before forming the amorphous silicon film, forming the seed layer constituted by silicon over the substrate.

### Claim 11 (depends on 1)

The method of crystallizing the amorphous silicon film according to claim 1, wherein the third temperature is a temperature equal to or more than 650° C. and equal to or less than 750° C.