# US 12,112,943 B2 · Method for forming film and processing apparatus

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- Number: US 12,112,943 B2
- Document ID: US12112943B2
- Status: Granted
- Kind: B2
- Application number: 17/656,324
- Filed: 2022-03-24
- Published: 2022-10-06
- Granted: 2024-10-08
- Earliest claimed: 2021-04-05
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Keita Kumagai; Hiroto Fujikawa; Ryo Watanabe
- Web page: https://patentgrep.com/patent/US12112943B2

## CPC

- H10P 14/3216: {Nitrides}
- C23C 16/0272: {Deposition of sub-layers, e.g. to promote the adhesion of the main coating}
- C23C 16/38: Borides
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/2905: {Silicon, silicon germanium or germanium}
- H10P 14/3238: {being insulating materials}
- H10P 14/3248: {consisting of two layers}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3416: {Nitrides}
- H10P 14/3444: {P-type}
- H10P 14/416: {of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers}
- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- H10P 14/68: Organic materials, e.g. photoresists
- H10P 14/6903: {containing silicon}
- H10P 50/73: {using masks for insulating materials}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A method for forming a film that includes forming a boron nitride film on a substrate, and forming a boron-containing silicon film on the boron nitride film.

## Claims

### Claim 1

A method for forming a film, the method comprising:
forming a boron nitride film on a substrate, and
forming a boron-containing silicon film on the boron nitride film,
wherein a ratio of elements of boron (B) and nitrogen (N) in the boron nitride film is B:50% and N:50%, and
wherein the forming of the boron nitride film is performed under conditions that a 10% B2H6/H2 gas flow rate is 700 sccm; an NH3 gas flow rate is 100 sccm; a film-forming temperature is 300° C.; and a processing chamber pressure is 0.5 Torr (66.7 Pa), and then the forming of the boron-containing silicon film on the boron nitride film is performed under conditions that a 10% B2H6/H2 gas flow rate is 800 sccm; a SiH4 gas flow rate is 666 sccm; a film-forming temperature is 250° C.; and a processing chamber pressure is 0.5 Torr (66.7 Pa).

### Claim 2 (depends on 1)

The method for forming a film according to claim 1, wherein the forming of the boron nitride film and the forming of the boron-containing silicon film are continuously performed under a vacuum atmosphere.

### Claim 3 (depends on 2)

The method for forming a film according to claim 2, wherein the forming of the boron nitride film and the forming of the boron-containing silicon film are continuously performed in a same processing chamber.

### Claim 4 (depends on 1)

The method for forming a film according to claim 1, further comprising: preparing the substrate such that the substrate has a SiN film or a SiCN film formed on a surface thereof, before the forming of the boron nitride film.

### Claim 5 (depends on 1)

The method for forming a film according to claim 1, wherein the forming of the boron nitride film and the forming of the boron-containing silicon film are continuously performed in a same processing chamber.