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US 12,112,941 B2Granted
Selective liquid sliding surface and method of fabricating the same
AssigneeThe Industry & Academic Cooperapation In Chungnam National University (Iac)
InventorsSeong Min Kang, Ji Seong Choi
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Abstract
A selective liquid sliding surface includes: a base layer; multiple pillars protruding from the base layer; and a head protruding from an upper surface of each of the multiple pillars and having a larger cross-sectional diameter than the pillar, wherein the head includes a first head protruding from the pillar and a second head protruding from a periphery of the first head, and the base layer, the pillar, and the head are formed of the same material.
Claims5
A method of fabricating a selective liquid sliding surface, the method comprising:
- a mushroom-shaped silicone mold fabrication step in which a mushroom-shaped silicone mold is fabricated;
- a mushroom-shaped structure formation step in which the mushroom-shaped silicone mold is filled with a polymer material, followed by curing;
- and
- a surface fabrication step in which a surface having mushroom-shaped structures is fabricated by separating the mushroom-shaped silicone mold from the polymer material,
- wherein the mushroom-shaped silicone mold fabrication step comprises:
- a photoresist layer formation step in which a photoresist layer is formed on an upper surface of a silicon wafer;
- a first etching step in which the photoresist layer is etched in a pattern of multiple rings arranged at regular intervals and the upper surface of the silicon wafer using the etched photoresist layer as a mask;
- a photoresist layer removal step in which the photoresist layer is removed;
- a polysilicon layer formation step in which a silicon oxide layer is deposited on the silicon wafer and a polysilicon layer is formed on the silicon oxide layer;
- a second etching step in which the entire region of the polysilicon layer excluding circular regions each corresponding to an outer periphery of a corresponding one of multiple ring-shaped trenches is etched;
- a silicon dioxide layer formation step in which a silicon dioxide layer is formed on the silicon oxide layer and the polysilicon layer;
- a third etching step in which circular regions of the silicon dioxide layer corresponding to the respective multiple ring-shaped trenches are etched;
- and
- a polysilicon layer removal step in which the polysilicon layer is removed.
11 more elements
Dependencies are inferred from the claim text.