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US 12,112,930 B2Granted
Method for improving deposition process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJung-Tang Wu, Szu-Hua Wu, Chin-Szu Lee, Yi-Lin Wang
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Abstract
A method includes placing a wafer on a wafer holder, depositing a film on a front surface of the wafer, and blowing a gas through ports in a redistributor onto a back surface of the wafer at a same time the deposition is performed. The gas is selected from a group consisting of nitrogen (N2), He, Ne, and combinations thereof.
Claims20
A method comprising:
- placing a wafer on a wafer holder;
- depositing a film on a front surface of the wafer;
- and
- blowing a backside gas through ports in a redistributor onto a back surface of the wafer at a same time the deposition is performed, wherein the backside gas is selected from a group consisting of nitrogen (N2), He, Ne, and combinations thereof, wherein the redistributor separates a space on a backside of the wafer into a first portion and a second portion, wherein the backside gas is blown into the first portion, wherein the backside gas is redistributed from the first portion into the second portion through the ports, with the back surface of the wafer exposed to the second portion, wherein a width of the wafer is smaller than a width of the second portion, wherein the backside gas is the only gas in the first portion and the second portion while blowing the backside gas through the ports.
1 more element
A method comprising:
- depositing a first metal-containing layer on a wafer by a first physical vapor deposition with a first plasma, wherein a first backside gas is blown to a backside of the wafer when the first metal-containing layer is deposited, wherein the first metal-containing layer comprises TaN, wherein the first backside gas comprises argon or H2;
- and
- depositing a second metal-containing layer over the first metal-containing layer by a second physical vapor deposition with a second plasma, wherein the second metal-containing layer comprises TiN, wherein a second backside gas is blown to the backside of the wafer when the second metal-containing layer is deposited, and wherein the first backside gas is different from the second backside gas, wherein the backside of the wafer is free from exposure to argon and H2 while the second backside gas is blown.
A method comprising:
- forming a bottom electrode layer on a substrate, wherein the bottom electrode layer comprises a first sublayer and a second sublayer, wherein forming the second sublayer of the bottom electrode layer comprises a first physical vapor deposition comprising:
- sputtering a Ti metal from a first target, wherein in the sputtering, plasma is generated from a first gas, wherein the first gas comprises N2;
- and
- conducting a second gas onto a back surface of the substrate, wherein the second gas is selected from a group consisting of nitrogen (N2), He, Ne, and combinations thereof;
- forming a magnetic tunnel junction (MTJ) layer over the bottom electrode layer;
- forming a top electrode layer over the MTJ layer;
- and
- patterning the top electrode layer, the MTJ layer, and the bottom electrode layer to form a magnetic random access memory (MRAM) cell, wherein the top electrode layer comprises a first conductive layer comprising TiN, a second conductive layer comprising Ta, and a third conductive layer comprising TaN.
5 more elements
Dependencies are inferred from the claim text.