# US 12,112,924 B2 · Composite structure and semiconductor manufacturing apparatus including composite structure

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- Number: US 12,112,924 B2
- Document ID: US12112924B2
- Status: Granted
- Kind: B2
- Application number: 17/244,299
- Filed: 2021-04-29
- Published: 2021-11-04
- Granted: 2024-10-08
- Earliest claimed: 2020-04-30
- Assignees: Toto Ltd.
- Applicants: Toto Ltd.
- Inventors: Hiroaki Ashizawa; Ryoto Takizawa
- Web page: https://patentgrep.com/patent/US12112924B2

## CPC

- H01J 37/32504: {Means for preventing sputtering of the vessel}
- H01J 37/32495: {Means for protecting the vessel against plasma}
- H10P 72/0421: {for drying etching}
- H01J 37/321: {the radio frequency energy being inductively coupled to the plasma}
- H01J 2237/3341: Reactive etching
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus as well as a semiconductor manufacturing apparatus. A composite structure including a base material and a structure that is provided on the base material and has a surface to be exposed to a plasma atmosphere, in which the structure has an yttrium-aluminum oxide as a main component, and has a lattice constant a calculated by the following formula (1) being larger than 12.080 Å: a=d·(h2+k2+l2)1/2 (1) where d represents a lattice plane spacing, and (hkl) represents a Miller index. This structure features excellent low-particle generation and is suitably used a member for a semiconductor apparatus.

## Claims

### Claim 1

A composite structure comprising: a base material; and a structure that is provided on the base material and has a surface,
wherein the structure comprises Y3Al5O12 as a main component, and the Y3Al5O12 has a lattice constant a, calculated by the following formula (1) being larger than 12.080 Å:
a=d·(h2+k2+l2)1/2 (1)
where d represents a lattice plane spacing, and (hkl) represents a Miller index.

### Claim 2 (depends on 1)

The composite structure according to claim 1, wherein the lattice constant is 12.100 Å or more.

### Claim 3 (depends on 1)

The composite structure according to claim 1, wherein the lattice constant is 12.120 Å or more.

### Claim 4 (depends on 1)

The composite structure according to claim 1, wherein the lattice constant is 12.15 Å or more.

### Claim 5 (depends on 1)

The composite structure according to claim 1, wherein after a Standard Plasma Test 1, a fluorine atom concentration at a depth of 30 nm from the surface of the structure, F130 nm, is less than 3%, and/or a fluorine atom concentration at a depth of 20 nm from the surface, F120 nm, is less than 4%,
wherein the Standard Plasma Test 1 is carried out by exposing the composite structure to a plasma environment for one hour using an Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) apparatus where the chamber pressure is 0.5 Pa, a process gas is a mixture of CHE3 (100 sccm) and O2 (10 sccm), a power output: is 1500 W (ICP coil output), and bias output is 750 W, and
wherein the fluorine atom concentration is measured by X-ray Photoelectron Spectroscopy (XPS) and through depth direction analysis using ion sputtering.

### Claim 6 (depends on 5)

The composite structure according to claim 5, wherein at least one of the fluorine atom concentration F130 nm or the fluorine atom concentration F120 nm is 2% or less.

### Claim 7 (depends on 1)

The composite structure according to claim 1, wherein after a Standard Plasma Test 2, a fluorine atom concentration at the depth of 30 nm from the surface, F230 nm, is less than 2%, and/or a fluorine atom concentration at the depth of 15 nm from the surface, F215 nm, is less than 3%,
wherein the Standard Plasma Test 2 is carried out by exposing the composite structure to a plasma environment for one hour using an Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) apparatus where the chamber pressure is 0.5 Pa, a process gas is SF6 (100 sccm), a power output is 1500 W (ICP coil output), and bias output is 750 W, and
wherein the fluorine atom concentration is measured by X-ray Photoelectron Spectroscopy (XPS) and through depth direction analysis using ion sputtering.

### Claim 8 (depends on 7)

The composite structure according to claim 7, wherein the fluorine atom concentration F230 nm is 1% or less and/or the fluorine atom concentration F215 nm is 2% or less.

### Claim 9 (depends on 1)

The composite structure according to claim 1, wherein after a Standard Plasma Test 3, a fluorine atom concentration at the depth of 20 nm from the surface, F320 nm, is less than 8%, and/or a fluorine atom concentration at the depth of 10 nm from the surface, F310 nm, is less than 9%,
wherein the Standard Plasma Test 3 is carried out by exposing the composite structure to a plasma environment for one hour using an Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) apparatus where the chamber pressure is 0.5 Pa, a process gas is SF6 (100 sccm), a power output is 1500 W (ICP coil output), and bias output is off (0 W), and
wherein the fluorine atom concentration is measured by X-ray Photoelectron Spectroscopy (XPS) and through depth direction analysis using ion sputtering.

### Claim 10 (depends on 9)

The composite structure according to claim 9, wherein the fluorine atom concentration F320 nm is 7% or less and/or the fluorine atom concentration F310 nm is 8% or less.

### Claim 11 (depends on 9)

The composite structure according to claim 9, wherein the fluorine atom concentration F320 nm is 1% or less and/or the fluorine atom concentration F310 nm is 2% or less.

### Claim 12 (depends on 1)

The composite structure according to claim 1 used in an environment requiring low-particle generation.

### Claim 13 (depends on 12)

The composite structure according to claim 12 that is a member for a semiconductor manufacturing apparatus.

### Claim 14 (depends on 1)

A semiconductor manufacturing apparatus comprising the composite structure according to claim 1.