# US 12,112,878 B2 · Asymmetric spiral inductor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,112,878 B2 - Document ID: US12112878B2 - Status: Granted - Kind: B2 - Application number: 17/105,677 - Filed: 2020-11-27 - Published: 2021-06-10 - Granted: 2024-10-08 - Earliest claimed: 2019-12-09 - Assignees: Realtek Semiconductor Corp. - Applicants: Realtek Semiconductor Corporation - Inventors: Hsiao-Tsung Yen; Ka-Un Chan - Web page: https://patentgrep.com/patent/US12112878B2 ## CPC - H01F 17/0013: {with stacked layers} - H01F 27/2804: {Printed windings} - H10W 20/497: {Inductive arrangements or effects of, or between, wiring layers} - H01F 2017/0073: {with a special conductive pattern, e.g. flat spiral} - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An asymmetric spiral inductor is provided. The asymmetric spiral inductor includes a first winding, a second winding and a third winding. The first winding has a first end and a second end and is implemented in the ultra-thick metal (UTM) layer of a semiconductor structure. The second winding, which has a third end and a fourth end, is implemented in the re-distribution layer of the semiconductor structure and has a first maximum trace width. The third winding, which has a fifth end and a sixth end, is implemented in the UTM layer of the semiconductor structure and has a second maximum trace width smaller than the first maximum trace width. The second and third ends are connected through a first through structure, the fourth and fifth ends are connected through a second through structure, and the first and sixth ends are the two ends of the asymmetric spiral inductor. ## Claims ### Claim 1 An asymmetric spiral inductor, comprising: a first winding, having a first end and a second end and being implemented in an ultra-thick metal (UTM) layer of a semiconductor structure; a second winding, having a third end and a fourth end, being implemented in a re-distribution layer (RDL) of the semiconductor structure, and having a first maximum trace width; and a third winding, having a fifth end and a sixth end, being implemented in the UTM layer of the semiconductor structure, and having a second maximum trace width smaller than the first maximum trace width; wherein the second end and the third end are connected through a first through structure, the fourth end and the fifth end are connected through a second through structure, and the first end and the sixth end are two ends of the asymmetric spiral inductor; wherein the second winding is located at an outer turn of the asymmetric spiral inductor and does not overlap with the third winding except at the second through structure; wherein the third winding has at least two turns. ### Claim 2 (depends on 1) The asymmetric spiral inductor of claim 1, wherein a length of the second winding is less than one turn of the asymmetric spiral inductor. ### Claim 3 (depends on 1) The asymmetric spiral inductor of claim 1, wherein a part of the second winding extends along an edge of the third winding. ### Claim 4 (depends on 3) The asymmetric spiral inductor of claim 3, wherein a part of the second winding overlaps with a part of the third winding. ### Claim 5 (depends on 3) The asymmetric spiral inductor of claim 3, wherein a first part of the second winding overlaps with a part of the third winding, and a second part of the second winding overlaps with a part of the first winding and a part of the third winding. ### Claim 6 (depends on 1) The asymmetric spiral inductor of claim 1, wherein the first winding is not a straight line, the second winding is not a straight line and comprises a first segment and a second segment, the first segment is substantially parallel to a first side of the third winding, and the second segment is substantially parallel to a second side of the third winding. ### Claim 7 An asymmetric spiral inductor, comprising: a spiral coil, having a first end and a second end and being implemented in a first conductor layer of a semiconductor structure; a first trace, having a third end and a fourth end and being implemented in a second conductor layer of the semiconductor structure, wherein the first conductor layer is different from the second conductor layer, and a length of the first trace is less than one turn of the spiral coil; and a second trace, having a fifth end and a sixth end and being implemented in the first conductor layer of the semiconductor structure, wherein the second trace is equal to or less than one turn; wherein the second end and the third end are connected through a first through structure, the fourth end and the fifth end are connected through a second through structure, and the first end and the sixth end are two ends of the asymmetric spiral inductor; wherein the spiral coil has at least two turns. ### Claim 8 (depends on 7) The asymmetric spiral inductor of claim 7, wherein the spiral coil has a first maximum trace width, the first trace has a second maximum trace width, and the second maximum trace width is greater than the first maximum trace width. ### Claim 9 (depends on 7) The asymmetric spiral inductor of claim 7, wherein a part of the first trace extends along an edge of the spiral coil. ### Claim 10 (depends on 9) The asymmetric spiral inductor of claim 9, wherein a part of the first trace overlaps with a part of the spiral coil. ### Claim 11 (depends on 9) The asymmetric spiral inductor of claim 9, wherein a first part of the first trace overlaps with a part of the spiral coil, and a second part of the first trace overlaps with a part of the second trace and a part of the spiral coil. ### Claim 12 (depends on 7) The asymmetric spiral inductor of claim 7, wherein the first trace is located at an outer turn of the asymmetric spiral inductor and does not overlap with the spiral coil except at the first through structure. ### Claim 13 (depends on 7) The asymmetric spiral inductor of claim 7, wherein the first trace is not a straight line, the second trace is not a straight line and comprises a first segment and a second segment, the first segment is substantially parallel to a first side of the spiral coil, and the second segment is substantially parallel to a second side of the spiral coil. ### Claim 14 An asymmetric spiral inductor, comprising: a first winding, having a first end and a second end and being implemented in an ultra-thick metal (UTM) layer of a semiconductor structure, wherein the first winding is equal to or less than one turn; a second winding, having a third end and a fourth end, being implemented in a re-distribution layer (RDL) of the semiconductor structure, and having a first maximum trace width; and a third winding, having a fifth end and a sixth end, being implemented in the UTM layer of the semiconductor structure, and having a second maximum trace width smaller than the first maximum trace width; wherein the second end and the third end are connected through a first through structure, the fourth end and the fifth end are connected through a second through structure, and the first end and the sixth end are two ends of the asymmetric spiral inductor; wherein the third winding has at least two turns. ### Claim 15 (depends on 14) The asymmetric spiral inductor of claim 14, wherein a length of the second winding is less than one turn of the asymmetric spiral inductor. ### Claim 16 (depends on 14) The asymmetric spiral inductor of claim 14, wherein a part of the second winding extends along an edge of the third winding. ### Claim 17 (depends on 16) The asymmetric spiral inductor of claim 16, wherein a part of the second winding overlaps with a part of the third winding. ### Claim 18 (depends on 16) The asymmetric spiral inductor of claim 16, wherein a first part of the second winding overlaps with a part of the third winding, and a second part of the second winding overlaps with a part of the first winding and a part of the third winding. ### Claim 19 (depends on 14) The asymmetric spiral inductor of claim 14, wherein the second winding is located at an outer turn of the asymmetric spiral inductor and does not overlap with the third winding except at the second through structure. ### Claim 20 (depends on 14) The asymmetric spiral inductor of claim 14, wherein the first winding is not a straight line, the second winding is not a straight line and comprises a first segment and a second segment, the first segment is substantially parallel to a first side of the third winding, and the second segment is substantially parallel to a second side of the third winding.