# US 12,110,591 B2 · Susceptor arrangement of a CVD reactor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,110,591 B2 - Document ID: US12110591B2 - Status: Granted - Kind: B2 - Application number: 17/593,081 - Filed: 2020-02-28 - Published: 2022-06-16 - Granted: 2024-10-08 - Earliest claimed: 2019-03-08 - Assignees: Aixtron SE - Applicants: Aixtron SE - Inventors: Francisco Ruda Y Witt; Marcel Kollberg; Hendrik Rauf - Web page: https://patentgrep.com/patent/US12110591B2 ## CPC - C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) - C23C 14/505: {for rotation of the substrates} - C23C 16/4584: {the substrate being rotated} - C23C 16/4585: {Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds} - C30B 25/12: Substrate holders or susceptors - H10P 72/7611: {characterised by edge profile or support profile} - H10P 72/7616: {characterised by a coating, a hardness or a material} - H10P 72/7618: {characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel} - H10P 72/7621: {characterised by supporting two or more semiconductor substrates} - H10P 72/7624: {characterised by the mechanical construction of the susceptor, stage or support} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A susceptor arrangement for use in a CVD reactor includes a circular or annular susceptor with a first susceptor broad side, on which a substrate holder and at least one covering element are arranged. At least one of the covering elements consists of multiple covering plates, in which a lowermost covering plate is adjacent to the first broad side face of the susceptor, and an uppermost covering plate covers the lowermost covering plate at least in certain regions and forms a free broad side face of the susceptor arrangement. The covering plates are preferably produced from silicon carbide, and are connected to one another by positioning elements. ## Claims ### Claim 1 A susceptor arrangement, comprising: a substrate holder (4); at least one covering element (5, 15) comprising a lowermost covering plate (6, 16, 36) and an uppermost covering plate (7, 17); a circular or annular susceptor (2) with a first broad side surface (3), on which the substrate holder (4) and the at least one covering element (5, 15) are arranged, wherein the lowermost covering plate (6, 16, 36) adjoins the first broad side surface (3) of the susceptor (2), and wherein the covering element (5, 15) forms a plate stack in which the uppermost covering plate (7, 17) lies completely on the lowermost covering plate (6, 16, 36) and forms a free broad side surface (14) of the susceptor arrangement; and at least one positioning element (8, 18) inserted through both a respective opening (12, 13) of the lowermost covering plate (6, 16, 36) and through or into a respective opening (9, 10, 19) of the uppermost covering plate (7, 17), with which the uppermost covering plate (7, 17) is secured to the lowermost covering plate (6, 16, 36). ### Claim 2 (depends on 1) The susceptor arrangement of claim 1, wherein the uppermost and lowermost covering plates (6, 7, 16, 17, 36) consist of SiC, quartz, Al2O3, ZrO2 or SiC-coated graphite. ### Claim 3 (depends on 1) The susceptor arrangement of claim 1, wherein each of the at least one positioning element (18) includes a shaft (18′) that is configured to be inserted into a respective insertion opening (24) of the first broad side surface (3) of the susceptor (2). ### Claim 4 (depends on 3) The susceptor arrangement of claim 3, wherein the shaft (18′) extends through an opening of a spacer element (20), with which the lowermost covering plate (6, 16, 36) is positioned at a gap distance to the first broad side surface (3) of the susceptor (2). ### Claim 5 (depends on 3) The susceptor arrangement of claim 3, wherein each of the at least one positioning element (18) has a head (18″), which has an enlarged diameter in relation to the shaft (18′) and rests on the uppermost covering plate (17). ### Claim 6 (depends on 1) The susceptor arrangement of claim 1, wherein the one or more openings (9, 10) of the uppermost covering plate (7) are formed by blind holes. ### Claim 7 (depends on 1) The susceptor arrangement of claim 1, wherein the uppermost covering plate (7, 17) directly adjoins the lowermost covering plate (6, 16, 36). ### Claim 8 (depends on 1) A chemical vapor deposition (CVD) reactor (1), comprising: a process chamber (28); a gas inlet organ (27) for introducing a process gas into the process chamber (28); the susceptor arrangement of claim 1; and a heating device (29) configured to heat a second broad side surface (3) of the susceptor (2) lying opposite the first broad side surface (3). ### Claim 9 (depends on 2) A chemical vapor deposition (CVD) reactor (1), comprising: a process chamber (28); a gas inlet organ (27) for introducing a process gas into the process chamber (28); the susceptor arrangement of claim 2; and a heating device (29) configured to heat a second broad side surface (3) of the susceptor (2) lying opposite the first broad side surface (3). ### Claim 10 (depends on 1) The susceptor arrangement of claim 1, wherein the uppermost covering plate (7, 17) is identical in shape to the lowermost covering plate (6, 16, 36).