# US 12,110,586 B2 · Pedestals for modulating film properties in atomic layer deposition (ALD) substrate processing chambers

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- Number: US 12,110,586 B2
- Document ID: US12110586B2
- Status: Granted
- Kind: B2
- Application number: 17/426,472
- Filed: 2020-01-30
- Published: 2022-05-26
- Granted: 2024-10-08
- Earliest claimed: 2019-02-08
- Assignees: Lam Research Corporation
- Applicants: Lam Research Corporation
- Inventors: Adrien Lavoie; Michael Philip Roberts; Chloe Baldasseroni; Richard Phillips; Ramesh Chandrasekharan
- Web page: https://patentgrep.com/patent/US12110586B2

## CPC

- C23C 16/45525: {Atomic layer deposition [ALD]}
- C23C 16/45536: {Use of plasma, radiation or electromagnetic fields}
- C23C 16/45544: {characterized by the apparatus}
- C23C 16/45565: {Shower nozzles}
- C23C 16/458: characterised by the method used for supporting substrates in the reaction chamber
- C23C 16/4581: {characterised by material of construction or surface finish of the means for supporting the substrate}
- C23C 16/4585: {Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds}
- C23C 16/505: using radio frequency discharges
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A system to deposit a film on a substrate using atomic layer deposition includes a pedestal arranged in a processing chamber to support the substrate on a top surface of the pedestal when depositing the film on the substrate. A first annular recess in the pedestal extends downwardly from the top surface of the pedestal and radially inwardly from an outer edge of the pedestal towards an outer edge of the substrate. The first annular recess has an inner diameter that is greater than a diameter of the substrate. An annular ring is made of a dielectric material and is arranged around the substrate in the first annular recess. A second annular recess in the pedestal is located under the annular ring. The second annular recess has a height and extends radially inwardly from the outer edge of the pedestal towards the outer edge of the substrate.

## Claims

### Claim 1

A system to deposit a film on a substrate using atomic layer deposition in a processing chamber, the system comprising:
a pedestal that is made of a metal or ceramic and that is arranged in the processing chamber to support the substrate on a top surface of the pedestal when depositing the film on the substrate using atomic layer deposition in the processing chamber;
an annular recess in the pedestal that extends downwardly from the top surface of the pedestal and radially inwardly from an outer edge of the pedestal towards an outer edge of the substrate, wherein the annular recess has an inner diameter that is greater than a diameter of the substrate;
an annular ring that is made of a dielectric material and that is arranged around the substrate in the annular recess;
a layer of a ceramic material that coats an annular outer region of the top surface of the pedestal; and
a second annular recess in the pedestal that is located under the annular ring, wherein the second annular recess has a height and extends radially inwardly from the outer edge of the pedestal towards the outer edge of the substrate.

### Claim 2 (depends on 1)

The system of claim 1 wherein the annular outer region of the layer extends up to the inner diameter of the annular recess.

### Claim 3 (depends on 1)

The system of claim 1 wherein the layer further includes a central region abutting the annular outer region and wherein a thickness of the central region is less than the annular outer region.

### Claim 4 (depends on 1)

The system of claim 1 wherein the layer further includes a central region abutting the annular outer region and wherein the central region is not coated with the ceramic material.

### Claim 5 (depends on 1)

The system of claim 1 wherein:
the layer further includes a central region abutting the annular outer region; and
the central region includes a pocket having a depth that is less than a thickness of the layer and having a radius that is less than a radius of the substrate.

### Claim 6 (depends on 1)

The system of claim 1 wherein:
the layer further includes a central region abutting the annular outer region; and
the central region includes a pocket having a depth that is equal to a thickness of the layer and having a radius that is less than a radius of the substrate.

### Claim 7 (depends on 1)

The system of claim 1 further comprising:
a showerhead arranged above the pedestal in the processing chamber;
wherein the showerhead receives radio frequency power when depositing the film on the substrate using atomic layer deposition in the processing chamber; and
wherein the pedestal is grounded.

### Claim 8 (depends on 1)

The system of claim 1 further comprising:
a showerhead arranged above the pedestal in the processing chamber;
wherein the pedestal receives radio frequency power when depositing the film on the substrate using atomic layer deposition in the processing chamber; and
wherein the showerhead is grounded.

### Claim 9

A system to deposit a film on a substrate using atomic layer deposition in a processing chamber, the system comprising:
a showerhead arranged in the processing chamber, the showerhead comprising an internal plenum and gas through holes through which to introduce and distribute process gases into the processing chamber;
a pedestal that is made of a metal and that is arranged directly below the showerhead in the processing chamber to support the substrate on a top surface of the pedestal when depositing the film on the substrate using atomic layer deposition, wherein the pedestal is smaller than an area of the showerhead including the gas through holes;
a layer of a ceramic material that coats the top surface of the pedestal, wherein the layer includes an annular outer region and a central region abutting the annular outer region; and
a pocket arranged in the central region of the layer, wherein the pocket has a depth that is less than or equal to a thickness of the annular outer region of the layer and has a radius that is less than a radius of the substrate.

### Claim 10 (depends on 9)

The system of claim 9 wherein:
the showerhead receives radio frequency power when depositing the film on the substrate using atomic layer deposition in the processing chamber; and
the pedestal is grounded.

### Claim 11 (depends on 9)

The system of claim 9 wherein:
the pedestal receives radio frequency power when depositing the film on the substrate using atomic layer deposition in the processing chamber; and
the showerhead is grounded.

### Claim 12

A pedestal to support a semiconductor substrate on a top surface of the pedestal, the pedestal comprising:
an annular recess in the pedestal that extends downwardly from the top surface of the pedestal and radially inwardly from an outer edge of the pedestal towards an outer edge of the semiconductor substrate, wherein the annular recess has an inner diameter that is greater than a diameter of the semiconductor substrate;
an annular ring that is made of a dielectric material and that is arranged around the semiconductor substrate in the annular recess;
a layer of a ceramic material that is disposed on an annular outer region of the top surface of the pedestal and that includes a central region abutting the annular outer region, wherein the central region is not coated with the ceramic material; and
a second annular recess in the pedestal that is located under the annular ring, wherein the second annular recess has a height and extends radially inwardly from the outer edge of the pedestal towards the outer edge of the semiconductor substrate.

### Claim 13 (depends on 12)

The pedestal of claim 12 wherein the annular outer region of the layer extends up to the inner diameter of the annular recess.