Low-e coated architectural glass having high selectivity

A low-e coating applied onto a glass for providing neutrality when viewed from inside and from outside in automotive and architectural glasses, comprising outwardly from the glass:

• a first dielectric structure comprising a first dielectric layer, a second dielectric layer and a first seed layer;
• wherein the first dielectric layer is SixNy and a thickness of the first dielectric layer is between 15 nm and 50 nm;
• the second dielectric layer is TiOx and a thickness of the second dielectric layer is between 1.3 nm and 4.5 nm;
• and the first seed layer is ZnAlOx and a thickness of the first seed layer is between 10 nm and 30 nm;
• a first functional layer positioned on said first dielectric structure, wherein a thickness of the first functional layer is between 5 nm and 22 nm;
• a first barrier layer comprising NiCrOx and positioned on said first functional layer, wherein a thickness of the first barrier layer is between 0.8 nm and 2.8 nm;
• a second dielectric structure positioned on said first barrier layer comprising a third dielectric layer and a second seed layer;
• wherein the third dielectric layer is ZnSnOx and a thickness of the third dielectric layer is between 40 nm and 70 nm;
• and the second seed layer is ZnAlOx and a thickness of the second seed layer is between 15 nm and 35 nm;
• a second functional layer positioned on said second dielectric structure, wherein a thickness of the second functional layer is between 5 nm and 22 nm;
• a second barrier layer comprising NiCrOx and positioned on said second functional layer, wherein a thickness of the second barrier layer is between 0.8 nm and 2.8 nm;
• a third dielectric structure positioned on said second barrier layer comprising a fourth dielectric layer and a third seed layer;
• wherein the fourth dielectric layer is ZnSnOx and a thickness of the fourth dielectric layer is between 35 nm and 65 nm;
• and the third seed layer is ZnALOx and a thickness of the third seed layer is between 10 nm and 35 nm;
• a third functional layer positioned on said third dielectric structure, wherein a thickness of the third functional layer is between 5 nm and 22 nm;
• a third barrier layer comprising NiCrOx and positioned on said third functional layer, wherein a thickness of the third barrier layer is between 0.8 nm and 2.8 nm;
• and
• an upper dielectric structure positioned on said third barrier layer comprising a fifth dielectric layer and an upper dielectric layer;
• wherein the fifth dielectric layer is ZnSnOx and a thickness of the fifth dielectric layer is between 10 nm and 35 nm;
• and the upper dielectric layer is SiOxNy and a thickness of the upper dielectric layer is between 10 nm and 35 nm;
• wherein the visible region transmittance value after thermal process is between 60-75% and the solar transmittance value is between 23-35%.