Back to results
US 12,107,032 B2Granted
Cooling of power semiconductors
AssigneeABB Schweiz AG
InventorsColin Tschida, Pietro Cairoli, Hongrae Kim, Francesco Agostini, Luca Raciti, Davide Leoni
Life of this patent
Estimating the term…
Abstract
Cooling arrangements are disclosed for solid state circuit breakers. In one arrangement, a MOV is disposed between two pulsating heat pipes. An IGCT is disposed on the other side of each pulsating heat pipe away from the MOV. In another arrangement, a bus bar is integral with a heat spreader disposed between a pulsating heat pipe and an IGCT.
Claims17
A solid state circuit breaker, comprising:
- a first power semiconductor;
- a gate driver,
- wherein the gate driver is in electronic communication with the first power semiconductor, the gate driver extending from the first power semiconductor in a first direction,
- a first active cooling system,
- wherein the first active cooling system extends in a second direction perpendicular to the first direction;
- a fan;
- and
- a first bus bar disposed between the first active cooling system and the first power semiconductor, the first bus bar being sandwiched between a base plate of the first active cooling system and the first power semiconductor to conduct heat from the first power semiconductor to the first active cooling system through a thickness of the first bus bar, the first bus bar being metallic and extending at least a portion beyond the first active cooling system and the first power semiconductor in a third direction opposite the first direction and perpendicular to the second direction to provide a first exposed electrical connector;
- wherein the first active cooling system comprises an evaporator section pressed against the first bus bar and a condenser section extending beyond the first bus bar and the first power semiconductor in the second direction;
- and
- wherein the fan is located adjacent the condenser section to direct air through the condenser section;
- wherein the first bus bar comprises a copper plate to homogenize a temperature distribution on the base plate without substantially reducing a junction temperature to reduce thermal stress on the first power semiconductor.
9 more elements
Dependencies are inferred from the claim text.