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US 12,104,278 B2Granted
Silicon carbide substrate
AssigneeSumitomo Electric Industries, Ltd.
InventorsTsubasa Honke, Kyoko Okita
Life of this patent
Estimating the term…
Abstract
A silicon carbide substrate has a first main surface, a second main surface, and a chamfered portion. The second main surface is opposite to the first main surface. The chamfered portion is contiguous to each of the first main surface and the second main surface. The silicon carbide substrate has a maximum diameter of 150 mm or more. A surface manganese concentration in the chamfered portion is 1×1011 atoms/cm2 or less.
Claims6
A silicon carbide substrate comprising:
- a first main surface;
- a second main surface opposite to the first main surface;
- and
- a chamfered portion contiguous to each of the first main surface and the second main surface,
- the silicon carbide substrate having a maximum diameter of 150 mm or more,
- a surface manganese concentration in the chamfered portion being 1×1011 atoms/cm2 or less, and
- a manganese concentration in the first main surface is 1×109 atoms/cm2 or less and lower than the surface manganese concentration in the chamfered portion.
4 more elements
Dependencies are inferred from the claim text.