Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMinato Ito, Hitoshi Kunitake, Takayuki Ikeda
Life of this patent
Estimating the term…
Abstract
A semiconductor device that functions as a relay station and is reduced in size is provided. The semiconductor device includes an operational amplifier, a first transistor and a first capacitor that are electrically connected to a first input side of the operational amplifier, and a first resistor and a second resistor that are electrically connected to a second input side. The second resistor is electrically connected to an output side of the operational amplifier, a gate of the first transistor is electrically connected to a first power supply, the first resistor is electrically connected to a second power supply, and at least a transistor included in the operational amplifier has a region overlapping with the first transistor.
Claims4
A semiconductor device comprising:
- an operational amplifier between an input terminal of a phase shifter and an output terminal of the phase shifter;
- a transistor electrically connected to a first input terminal of the operational amplifier;
- a first resistor electrically connected to a second input terminal of the operational amplifier;
- and
- a second resistor electrically connected to the second input terminal of the operational amplifier,
- wherein a gate of the transistor is electrically connected to a first terminal,
- wherein one of a source and a drain of the transistor is electrically connected to the input terminal of the phase shifter,
- wherein the other of the source and the drain of the transistor is electrically connected to the first input terminal of the operational amplifier,
- wherein the first resistor is electrically connected to the input terminal of the phase shifter,
- wherein the second resistor is electrically connected to the output terminal of the phase shifter, and
- wherein at least a transistor included in the operational amplifier comprises a region overlapping with the transistor.
A semiconductor device comprising:
- an operational amplifier between an input terminal of a phase shifter and an output terminal of the phase shifter;
- a transistor electrically connected to a first input terminal of the operational amplifier;
- a capacitor electrically connected to one of a source and a drain of the transistor;
- a first resistor electrically connected to a second input terminal of the operational amplifier;
- and
- a second resistor electrically connected to the second input terminal of the operational amplifier,
- wherein a gate of the transistor is electrically connected to a first terminal,
- wherein the other of the source and the drain of the transistor is electrically connected to the input terminal of the phase shifter,
- wherein the one of the source and the drain of the transistor is electrically connected to the first input terminal of the operational amplifier,
- wherein the first resistor is electrically connected to the input terminal of the phase shifter,
- wherein the second resistor is electrically connected to the output terminal of the phase shifter, and
- wherein at least a transistor included in the operational amplifier comprises a region overlapping with the transistor.
A semiconductor device comprising:
- an operational amplifier between an input terminal of a phase shifter and an output terminal of the phase shifter;
- a transistor electrically connected to a first input terminal of the operational amplifier;
- a memory element electrically connected to a gate of the transistor;
- a first resistor electrically connected to a second input terminal of the operational amplifier;
- and
- a second resistor electrically connected to the second input terminal of the operational amplifier,
- wherein the gate of the transistor is electrically connected to a first terminal,
- wherein one of a source and a drain of the transistor is electrically connected to the input terminal of the phase shifter,
- wherein the other of the source and the drain of the transistor is electrically connected to the first input terminal of the operational amplifier,
- wherein the first resistor is electrically connected to the input terminal of the phase shifter,
- wherein the second resistor is electrically connected to the output terminal of the phase shifter, and
- wherein at least a transistor included in the operational amplifier comprises a region overlapping with the transistor.
Dependencies are inferred from the claim text.