Solid-state image pickup device and electronic apparatus having a divided pixel separation wall
AssigneeSony Group Corporation
InventorsAtsushi Masagaki, Yusuke Tanaka
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.
Claims22
A light detecting device, comprising:
- a pixel, including:
- a first photodiode, a second photodiode, a third photodiode, and a fourth photodiode disposed in a semiconductor substrate;
- a divided pixel separation wall disposed in the semiconductor substrate,
- wherein a first portion of the divided pixel separation wall is disposed between the first photodiode and the second photodiode,
- wherein a second portion of the divided pixel separation wall is disposed between the second photodiode and the third photodiode,
- wherein a third portion of the divided pixel separation wall is disposed between the third photodiode and the fourth photodiode,
- wherein a fourth portion of the divided pixel separation wall is disposed between the first photodiode and the fourth photodiode;
- a first impurity region disposed in the semiconductor substrate and between the first photodiode and the second photodiode;
- a second impurity region disposed in the semiconductor substrate and between the second photodiode and the third photodiode;
- a third impurity region disposed in the semiconductor substrate and between the third photodiode and the fourth photodiode;
- and
- a fourth impurity region disposed in the semiconductor substrate and between the first photodiode and the fourth photodiode.
A light detecting device, comprising,
- a pixel, including:
- a first photodiode, a second photodiode, a third photodiode, and a fourth photodiode disposed in a semiconductor substrate;
- a divided pixel separation wall disposed in the semiconductor substrate,
- wherein a first portion of the divided pixel separation wall is disposed between the first photodiode and the second photodiode,
- wherein a second portion of the divided pixel separation wall is disposed between the second photodiode and the third photodiode,
- wherein a third portion of the divided pixel separation wall is disposed between the third photodiode and the fourth photodiode,
- wherein a fourth portion of the divided pixel separation wall is disposed between the first photodiode and the fourth photodiode;
- a first overflow path disposed in the semiconductor substrate and between the first photodiode and the second photodiode;
- a second overflow path disposed in the semiconductor substrate and between the second photodiode and the third photodiode;
- a third overflow path disposed in the semiconductor substrate and between the third photodiode and the fourth photodiode, and
- a fourth overflow path disposed in the semiconductor substrate and between the first photodiode and the fourth photodiode.
Dependencies are inferred from the claim text.