Dry etching method, and dry etching agent and storage container therefor
AssigneeCentral Glass Company, Limited
InventorsHiroyuki Oomori, Tatsunori Kamida, Shinya Ikeda
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Abstract
A dry etching method according to one embodiment of the present disclosure includes plasmatizing a dry etching agent and etching a silicon oxide or a silicon nitride with the plasmatized dry etching agent, wherein the dry etching agent comprises CF3I and a C2-C3 fluorine-containing linear nitrile compound, and wherein the concentration of the C2-C3 fluorine-containing linear nitrile compound relative to the CF3I is higher than or equal to 1 vol. ppm and lower than or equal to 1 vol %.
Claims8
A dry etching method, comprising:
- plasmatizing a dry etching agent supplied from a metallic storage container to provide a plasmatized dry etching agent;
- and
- etching a silicon oxide or a silicon nitride on a substrate with the plasmatized dry etching agent,
- wherein the dry etching agent stored in the storage container comprises CF3I and a fluorine-containing linear nitrile compound of 2 or 3 carbon atoms, and
- wherein a concentration of the fluorine-containing linear nitrile compound relative to the CF3I is higher than or equal to 1 vol. ppm and lower than or equal to 1 vol %.
A storage container made of a metal material and closed and filled with a mixture comprising CF3I and a fluorine-containing linear nitrile compound of 2 or 3 carbon atoms, wherein a concentration of the fluorine-containing linear nitrile compound relative to the CF3I is higher than or equal to 1 vol. ppm and lower than or equal to 1 vol %.
Dependencies are inferred from the claim text.